Professional Documents
Culture Documents
Copyright 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997
G G G G G
8 A Continuous On-State Current 80 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA
K A G
1 2 3 TO-220 PACKAGE (TOP VIEW)
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING TIC116D Repetitive peak off-state voltage (see Note 1) TIC116M TIC116S TIC116N TIC116D Repetitive peak reverse voltage TIC116M TIC116S TIC116N Continuous on-state current at (or below) 80C case temperature (see Note 2) Average on-state current (180 conduction angle) at (or below) 80C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse width 300 s) Peak gate power dissipation (pulse width 300 s) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL VRRM VDRM SYMBOL VALUE 400 600 700 800 400 600 700 800 8 5 80 3 5 1 -40 to +110 -40 to +125 230 A A A A W W C C C V V UNIT
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k. 2. These values apply for continuous dc operation with resistive load. Above 80C derate linearly to zero at 110C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80C derate linearly to zero at 110C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
6: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 3 62.5 UNIT C/W C/W
PRODUCT
INFORMATION
R1
TH1 RG IG V G2
NOTES: A. Resistor R1 is adjusted for the specified value of I RM . B. Resistor R2 value is 30/IH , where I H is the holding current value of thyristor TH1. C. Thyristor TH1 is the same device type as the DUT. D. Pulse Generators, G1 and G2, are synchronised to produce an on-state anode current waveform with the following characteristics: tP = 50 s to 300 s G2 duty cycle = 1% E. Pulse Generators, G1 and G2, have output pulse amplitude, V G , of 20 V and duration of 10 s to 20 s.
G2 t P Synchronisation
V G1 V G2 IT IA tP 0 IRM VA
VT 0
tq
PMC1AB
PRODUCT
INFORMATION
TYPICAL CHARACTERISTICS
AVERAGE ON-STATE CURRENT DERATING CURVE
16 IT(AV) - Maximum Average On-State Current - A 14 12 0 10 Continuous DC 8 6 4 2 0 30 = 180 180 Conduction Angle
TI03AA
10
40
50
60
70
80
90
100
110
01 01
10
100
TC - Case Temperature - C
Figure 3.
Figure 4.
10
TC 80C No Prior Device Conduction Gate Control Guaranteed 1 1 10 Consecutive 50 Hz Half-Sine-Wave Cycles 100
Figure 5.
Figure 6.
PRODUCT
INFORMATION
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT vs CASE TEMPERATURE
10 VAA = 6 V IGT - Gate Trigger Current - mA tp(g) 20 s VGT - Gate Trigger Voltage - V RL = 1 k 08
TC03AA
06
1 -50
-25
25
50
75
100
125
0 -50
-25
25
50
75
100
125
TC - Case Temperature - C
TC - Case Temperature - C
Figure 7.
Figure 8.
10
01
001 01
10
100
1000
1 -50
-25
25
50
75
100
125
TC - Case Temperature - C
Figure 9.
Figure 10.
PRODUCT
INFORMATION
TYPICAL CHARACTERISTICS
PEAK ON-STATE VOLTAGE vs PEAK ON-STATE CURRENT
25 TC = 25 C tP = 300 s Duty Cycle 2 %
TC03AE
15
05
0 01
10
100
0.0 100
Figure 11.
Figure 12.
Figure 13.
PRODUCT
INFORMATION
3,96 3,71
10,4 10,0
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
PRODUCT
INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
PRODUCT
INFORMATION