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Preliminary specification
BY359F-1500, BY359F-1500S
SYMBOL
k 1
a 2
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diode featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is intended for use in TV receivers and PC monitors. The BY359F series is supplied in the conventional leaded SOD100 package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode isolated
SOD100
case
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM IF(peak) IF(RMS) IFRM IFSM PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Peak forward current RMS forward current Peak repetitive forward current Peak non-repetitive forward current Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 1500 1500 1300 10 7 15.7 60 60 66 150 150 UNIT V V V A A A A A A C C
BY359F-1500 BY359F-1500S
Tstg Tj
sinusoidal; a = 1.57 t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 C prior to surge; with reapplied VRWM(max)
THERMAL RESISTANCES
SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound without heatsink compound in free air. MIN. TYP. 55 MAX. 4.8 5.9 UNIT K/W K/W K/W
September 1998
Rev 1.300
Philips Semiconductors
Preliminary specification
BY359F-1500, BY359F-1500S
BY359F-1500 SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A IF = 10 A; Tj = 150C VR = 1300 V VR = 1300 V; Tj = 100 C TYP. 1.3 1.00 10 50 MAX. 1.8 1.5 100 300
BY359F-1500S TYP. 1.5 1.25 10 100 MAX. 2.0 1.75 100 600 UNIT V V A A
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated BY359F-1500 SYMBOL trr Qs Vfr PARAMETER Reverse recovery time Reverse recovery charge Peak forward recovery voltage CONDITIONS IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 10 A; dIF/dt = 30 A/s TYP. 0.47 1.6 11.0 MAX. 0.60 2.0 BY359F-1500S TYP. 0.28 0.70 17.0 MAX. 0.35 0.95 UNIT s C V
dI F dt
I
F
trr time
time VF
Qs
25%
100%
V VF time
fr
rrm
September 1998
Rev 1.300
Philips Semiconductors
Preliminary specification
BY359F-1500, BY359F-1500S
80 70
IFS(RMS) / A
BY359
IF / A 30 Tj=150C
BY359
IFSM 60 50 40 30
10 20
Tj=25C
typ
Fig.3. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150C prior to surge with reapplied VRWM.
IF / A
BY359S
10
30 Tj=150C Tj=25C
20
0.1
10 typ
0.01
P D
tp
D=
t T
p
0.001 1us
10us
10s
September 1998
Rev 1.300
Philips Semiconductors
Preliminary specification
BY359F-1500, BY359F-1500S
0.9 0.5
seating plane
4.4
13.5 min
k
0.4 M
a
0.9 0.7 0.55 max 1.3
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1998
Rev 1.300
Philips Semiconductors
Preliminary specification
BY359F-1500, BY359F-1500S
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
September 1998
Rev 1.300