IPASJ International Journal of Electrical Engineering(IIJEE)

Web Site: http://www.ipasj.org/IIJEE/IIJEE.htm

A Publisher for Research Motivation........ Email: editoriijee@ipasj.org
Volume 2, Issue 2, February 2014 ISSN 2321-600X

Volume 2, Issue 2, February 2014 Page 1


ABSTRACT
The influence of the illumination wavelength on the electrical parameters of a polycrystalline vertical junction silicon solar cell
is theoretically analyzed. From the excess minority carriers density, the photocurrent density and photovoltage across the
junction are determined. By help of both photocurrent and photovoltage, the series and shunt resistance are deduced and the
solar cell associated capacitance is calculated.
Keywords: vertical junction - wavelength - frequency modulation - electrical parameters.
1. INTRODUCTION
The knowledge of both microscopic and electrical parameters of solar cell is of great importance in order to improve
solar cell fabrication process and materials, leading to the higher conversion efficiency. Various techniques [1,2] have
been developed for that purpose; particularly, previous work[3, 4] have shown that the behavior of silicon solar cells is
dependent on the illumination wavelength. The purpose of this paper is to investigate the influence of monochromatic
illumination wavelength on the electrical parameters of a vertical junction polycrystalline silicon solar cell.

2. THEORY
Figure 1 represents parallel vertical junction solar cells under monochromatic light, in one dimensional model (Ox),
where the studied p-base1 interacts with the two adjacent emitters


Figure 1: vertical parallel junction silicon solar cells
Given that the contribution of the base to the photocurrent is larger than that of the emitter [5] our analysis will only be
developed in the base region.
Taking into account the generation, recombination and diffusion phenomena in the base, the simplified one
dimensional expression governing the variation of the minority carriers density (x,,t) under modulation frequency
[5,6,7] is:

INFLUENCE OF ILLUMINATION
WAVELENGTH ON THE ELECTRICAL
PARAMETERS OF A VERTICAL JUNCTION
SILICON SOLAR CELL UNDER
FREQUENCY MODULATION

Sahin GKAN, Ndeye THIAM; Mor NDIAYE, Amadou DIAO, Babacar MBOW and Grgoire
SISSOKO

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and
Technology, University Cheikh Anta Diop, Dakar, Senegal
IPASJ International Journal of Electrical Engineering(IIJEE)
Web Site: http://www.ipasj.org/IIJEE/IIJEE.htm
A Publisher for Research Motivation........ Email: editoriijee@ipasj.org
Volume 2, Issue 2, February 2014 ISSN 2321-600X

Volume 2, Issue 2, February 2014 Page 2

( ) ( ) ( )
t
t x
t z G
t x
x
t x
D
c
c
+ =
c
c

,
) , , (
, ,
) (
2
2

(1)
. H is the base width, and x is the depth along x axis, is the angular frequency, z the base depth according to the
vertical axis ;
D() [8]: and are respectively, the excess minority carrier diffusion constant and lifetime.
The excess minority carriers density solution of Eq1, can be written as:
( ) ( ) ( ) t j x t x exp , = (2)
Carrier generation rate G(z, , t) at position z is given by :
( ) ( ) ( ) t j z g t z G exp , , , =

(3)

With
( ) ) ) ( exp( ) ( )) ( 1 )( ( , z R z g =

(4)
Were | is the external excitation flux and the illumination wavelength.. R( ) and o( ) are respectively the
monochromatic reflection and absorption coefficients of the silicon.
Replacing equation (2) into equation (1), the temporary part vanishes and we obtain:
( ) ( )
) , (
) (
, , , ,
2 2
2

z g
L
x
x
x
=
c
c
(5)
) 1 (
1
) (
1
2 2
+ =

j
L L
( 6)
The solution ot this equation is:








Coefficients A and B are determined through the following boundary conditions [9]:
- at the junction (x =0):
( )
( )
0
0
, , ,
, , ,
) (
=
=
=
c
c

x
x
z x Sf
x
z x
D

(8)
Sf is the excess minority carriers recombination velocity at each junction.

- at the middle of the base (x =H/2) [10.]:

( )
0
, , ,
) (
2
=
c
c

=
H
x
x
z x
D

(9)
The excess minority carriers in the base will flow across the two junctions(emitter1-first half of the base and emitter 2-
second half of the base) by diffusion(Fig.2) The photocurrent density is given by the following expression:
( )
0
, , ,
) ( 2
=
c
c
=
x
Ph
x
z x
D q J



(10)
Where q is the elementary charge.
The unit of cell can be represented as two cells mounted in parallel, composed of half of the base associated to emitter1
and 2. From Eq.(9) each half of the base will acted as ideal back surface field(recombination velocity at H/2 remained
zero).
( )
) ) ( exp( ) ( )) ( 1 )( (
) (
) (

) (
sinh
) (
cosh , , ,
2

+
|
|
.
|

\
|
+
|
|
.
|

\
|
=
z R
D
L
L
x
B
L
x
A z x

(7)
IPASJ International Journal of Electrical Engineering(IIJEE)
Web Site: http://www.ipasj.org/IIJEE/IIJEE.htm
A Publisher for Research Motivation........ Email: editoriijee@ipasj.org
Volume 2, Issue 2, February 2014 ISSN 2321-600X

Volume 2, Issue 2, February 2014 Page 3


Figure(2). Minority carrier distribution in the base
The photovoltage across the junction, according to the Boltzmanns relation, is obtained as:
( )
(

+ = 0 1 ln
2
0

n
Nb
V V
T Ph
(11)
with V
T
the thermal voltage, Nb the base doping density, n
i
the intrinsic carriers density.
The series and shunt resistances are given by the relations (11) and (12) [ 11- 16]:
( )
) , , , (
ph
J
) , , , (
ph
V -
, , ,



Sf z
Sf z
co
V
Sf z Rs =

(12)
( )
) , , , (
ph
J -
) , , , (
ph
V
, , ,



Sf z
cc
J
Sf z
Sf z Rsh =

(13)
The charge variation in the base lead to a corresponding photovoltage variation across the junction; this give rise to an
associated capacitance. This capacitance is mainly due to the fixed ionized charge (dark capacitance) at the junction
boundaries and the diffusion process (diffusion capacitance) [17-19.]. The solar cells capacitance can be defined by:
dV
dQ
C =

(14)
with
0
) (
=
=
x
x q Q

(15)
Given the photovoltage expression (eq.10), the capacitance can be rewritten as:
( )
|
|
.
|

\
|
+ = 0 ) , , , (
2

Nb
n
V
q
Sf z C
i
T

(16)


3. SIMULATION RESULTS AND DISCUSSION
We present in this section the simulation results obtained from all the above equations.

3.a. Series and shunt resistances
Solar cell, as simulated by essentially one-dimensional model, is assumed to show a homogeneous current flow across
the whole area, both under illumination and in the dark. In the traditional interpretation of IV characteristics of solar
cells all nonlinear currents belonged to the cell, and only ohmic current paths across the n
+
-p junction have been
attributed to parasitic resistances. These parasitic resistances are the series and shunt resistances.
IPASJ International Journal of Electrical Engineering(IIJEE)
Web Site: http://www.ipasj.org/IIJEE/IIJEE.htm
A Publisher for Research Motivation........ Email: editoriijee@ipasj.org
Volume 2, Issue 2, February 2014 ISSN 2321-600X

Volume 2, Issue 2, February 2014 Page 4

The profile of series resistance is shown on figure (3) and (4) respectively for the wavelengths lower than 0,5m and
the wavelengths higher than 0,5m.

- wavelengths lower than 0,5m

Figure 3: series resistance versus junction recombination velocity (logarithmic scale) for various wavelengths.

L0=0.0001cm, D0 =26cm
2
/s; e =10
5
rad/s; z =0.0001cm


- wavelengths higher than 0,5m

Figure 4: series resistance versus junction recombination velocity (logarithmic scale) for various wavelengths.
L0=0.0001cm; D0 = 26cm
2
/s, e =10
5
rad/s; z =0.0001cm


These figures for the wavelengths higher 0,5m, series resistance increases with the wavelength while for wavelengths
lower than 0,5m it is the opposite which is observed.
Taking into account the thickness of the solar cell along z axis, the wavelengths lower than 0,5m generate more
carriers in the base thus decreasing the dynamic resistivity of the base and thus series resistance. It is the opposite
phenomenon in the long wavelengths range.
For the shunt resistance, we have the following profiles:
- wavelengths lower than 0,5m
IPASJ International Journal of Electrical Engineering(IIJEE)
Web Site: http://www.ipasj.org/IIJEE/IIJEE.htm
A Publisher for Research Motivation........ Email: editoriijee@ipasj.org
Volume 2, Issue 2, February 2014 ISSN 2321-600X

Volume 2, Issue 2, February 2014 Page 5


Figure 5: shunt resistance versus junction recombination velocity (logarithmic scale) for various wavelengths.
L0=0.0001cm; D0 =26cm
2
/s, e =10
5
rad/s; z =0.0001cm



- wavelengths higher than 0,5m

Figure 6: shunt resistance versus junction recombination velocity (logarithmic scale) for various wavelengths.
L0=0.0001cm, D0 =26cm
2
/s, e =10
5
rad/s; z =0.0001cm


Shunt resistance always increases with the junction recombination velocity but its behavior with the wavelength
depends on the considered wavelengths range. In the range of wavelengths lower than 0,5m, shunt resistance
decreases when the wavelength increases; for the wavelengths higher than 0,5m, it is the contrary effect which is
observed. The evolution of shunt resistance with the wavelength is directly related on the absorption coefficient
(penetration depth) and to the thickness of the solar cell.
3.b. Capacitance
Figures (7) and (8) present the solar cell capacitance versus junction recombination velocity respectively for the
wavelengths lower than 0,5m and the wavelengths higher than 0,5m.

- wavelengths lower than 0,5m
IPASJ International Journal of Electrical Engineering(IIJEE)
Web Site: http://www.ipasj.org/IIJEE/IIJEE.htm
A Publisher for Research Motivation........ Email: editoriijee@ipasj.org
Volume 2, Issue 2, February 2014 ISSN 2321-600X

Volume 2, Issue 2, February 2014 Page 6


Figure 7: capacitance versus junction recombination velocity (logarithmic scale) for various wavelengths.
L0=0.0001cm, D0 =26cm
2
/s e =10
5
rad/s; z =0.0001cm



- wavelengths higher than 0,5m


Figure 8: capacitance versus logarithmic of junction recombination velocity (logarithmic scale) for various wavelengths. L0=
0.0001cm; D0=26cm
2
/s, e =10
5
rad/s; z =0.0001cm

The study of the diffusion capacitance of the solar cell shows that the behavior of the capacitance depends on the
considered wavelengths range. .
With wavelengths lower than 0,5m, we have more generation for not very thick solar cells and thus more carriers
generation; with the carriers generation, the diffusion phenomenon takes place and the capacitance of the solar cell
(mainly diffusion capacitance) increases consequently.

4. CONCLUSION
In this paper, we have developed a mathematical / physical model which enables us to simulate the behavior of the
vertical parallel junction solar cell. In our model, we considered only the contribution of the base. Electrical parameters
such as series and shunt resistances and diffusion capacitance were then expressed and computed versus the junction
recombination velocity, for various wavelengths.

REFERENCES
[1] Orton, J.W and P. Blood, 1990. The Electrical Characterization of Semiconductors: Measurement of Minority
Carrier Properties. Academic Press, London,
[2] Zondervan, A., L. A. Verhoef and F.A. Lindholm, 1988. Measurement circuits for silicon-diode and solar-cell
lifetime and surface recombination velocity by electrical short-circuit current decay. IEEE Trans. Electron Dev.
Ed-35, 85-88.
IPASJ International Journal of Electrical Engineering(IIJEE)
Web Site: http://www.ipasj.org/IIJEE/IIJEE.htm
A Publisher for Research Motivation........ Email: editoriijee@ipasj.org
Volume 2, Issue 2, February 2014 ISSN 2321-600X

Volume 2, Issue 2, February 2014 Page 7

[3] Ray, U. C and S. K. Agarwal, 1988. Wavelength dependence of short- circuit current decay in solar cells. J. Appl.
Phys. 63, 547-549.
[4] Sissoko, G., C. Museruka, A. Corra, I. Gaye and A. L. Ndiaye, 1996. Light spectral effect on recombination
parameters of silicon solar cell, World Renewable Energy Congress, part III, pp.1487-1490,
[5] Noriaki Honma and Chusuke Munakata ; sample thickness dependence of minority carrier Lifetimes Measured
using an ac photovoltaic Method; japanese journal of applied physics vol.26,no 12,December,1987,pp. 233-236
[6] Noriaki HONMA ,Chusuke MUNAKATA and Hirofimi SHIMIZU; calibration of minority carrier lifetimes
measured with an ac photovoltaic method; japanese journal of applied physics vol.27,no 7,july,1988,pp. 1322-1326
[7] Andreas Mandelis; Coupled ac photocurrent and photothermal reflectance response theoryof semiconducting p-n
junctions; J. Appl. Phys. 66(11), 1 December 1989,pp. 5572-5583
[8] Dieng, A., I. Zerbo, M. Wade, A. S. Maiga and G. Sissoko, 2011. Three-dimensional study of a polycrystalline
silicon solar cell: the influence of the applied magnetic field on the electrical parameters, Semicond. Sci. Technol.
26 095023 (9pp)
[9] Diallo, H. L., A. Wereme, A. S. Maiga and G. Sissoko, 2008. New approach of both junction and back surface
recombination velocities in a 3D modelling study of a polycrystalline silicon solar cell, Eur. Phys. J. Appl. Phys. 42
20311
[10] Avraham GOVER, Paul STELLA ; Vertical Multijunction Solar-Cell One-Dimensional Analysis ;IEEE
transactions on electron devices, vol. ed-21, no 6,june 1974,pp351-356.
[11] Bashahu, M. and A. Habyarimana, 1995. Review and test of methods for determination of the solar cell series
resistance, Renewable energy, 6, (2): 127-138.
[12] Diallo, H. L., B. Dieng, I. Ly, M. M. Dione, M. Ndiaye, O. H. Lemrabott, Z. N. Bako, A. Wereme and G. Sissoko,
2012. Determination of the Recombination and Electrical Parameters of a Vertical Multijunction Silicon Solar
Cell, Res. J. Appl. Sci. Eng. Techn., 4(16): 2626-2631
[13] Pysch, D., A. Mette and S. W. Glunz, 2007. A review and comparison of differentmethods to determine the series
resistance of solar cells, Solar Energy Materials and Solar cells., 91 :1698-1706.
[14] El- Adawi, M. K. and I. A. Al- Nuaim, 2002. A method to determine the solar cell series resistances from a single
I-V characteristic curve considering its shunt resistance- new approach. Vaccum., 64: 33-36.
[15] Mbodji, S., I. Ly, H. L. Diallo, M. M. Dione, O. Diasse and G. Sissoko, 2012. Modeling study of n+/p solar cell
resistances from single I-V characteristic curve considering the junction recombination velocity (Sf). Res. J. Appl.
Sci. Eng. Techn., 4(1): 1-7.
[16] D. Caputo, G. De Cesare, F. Irrera, F. Palma, And M. Tucci ; Characterisation of intrinsic a-Si:h IN p-i-n devices
by capacitance measurements: Theory and experiments; J. Appl. Phys. 76(6), 15 September 1994,pp. 3534-3541.
[17] Boer, K. W., 2010. Introduction to space charge effects in semiconductor (Springer-Verlag).
[18] I.Gaye , A.Correa, A.L.Ndiaye, E.Nanema,A.B.B.Ba, M.Adj And G.Sissoko; Impedence parameters determination
of silicon solar cell using the one diode model in transient study; WREC 1996 pp 1598-1601.