Professional Documents
Culture Documents
Data Sheet
Description
Features
Specifications
3GX
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
Bottom View
Notes:
Package marking provides orientation and identification:
3G = Device Code
x = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
#1
RFin
Applications
Front-end LNA Q1 and Q2, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure
Driver Amplifier for WLAN, WLL/RLL and MMDS applications
General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
Absolute
Maximum
Vds
DrainSource Voltage[2] V
Vgs
GateSource Voltage
-5 to 1.0
Vgd
-5 to 1.0
Drain Current
mA 300
Igs
Gate Current
mA
1.0
Pin max.
RF Input Power
dBm
+24
Tch
Channel Temperature
150
Tstg
Storage Temperature
-65 to 150
[2]
ds
[2]
diss
Thermal Resistance[2,4]
ch-b = 70C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is
25C. Derate 14.30mW/C for TB > 80C.
4. Channel-to-board thermal resistance
measured using 150C Liquid Crystal Measurement method.
20
[3]
Units
Vgs
Min.
Typ.
Max.
0.65
Vth
Threshold Voltage
0.30
Ids
3.70
Gm
Transconductance
Vds = 4.0V, Gm = Ids/Vgs; mmho
Vgs = Vgs1 Vgs2
Vgs1 = 0.6V, Vgs2 = 0.55V
650
Igss
NF
Noise Figure
-10.0
-0.34
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dB
dB
dB
0.80
0.85
1.00
1.3
G Gain [1]
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dB
17.2
OIP3
Output 3rd Order Intercept Point[1]
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dBm
42.0
P1dB
Output 1dB Compressed [1]
f=900 MHz
f=2.0 GHz
f=2.4 GHz
dBm
dBm
dBm
21.7
23.0
23.2
PAE
Power Added Efficiency
f=900 MHz
f=2.0 GHz
f=2.4 GHz
%
%
%
33.8
46.0
49.0
dBc
dBc
-54.0
-64.0
ACLR
Notes:
Input
DUT
Output
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE and
ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit
losses have been de-embedded from actual measurements.
150
Stdev=0.08
Stdev=0.86
120
90
3 Std
FREQUENCY
FREQUENCY
120
+3 Std
60
3 Std
+3 Std
60
30
30
90
36 37 38 39 40 41 42 43 44 45
.5
.6
.7
.8
1.1
150
150
Stdev=1.14
Stdev=0.22
120
90
3 Std
+3 Std
60
FREQUENCY
120
FREQUENCY
90
3 Std
+3 Std
60
30
30
.9
NF (dB)
OIP3 (dBm)
14.5
15
15.5
16
16.5
Gain (dB)
19
20
21
22
23
24
25
26
P1dB (dBm)
Notes:
1. Distribution data sample size is 500 samples taken from 3 different wafers. Future wafers
allocated to this product may have nominal values anywhere between the upper and lower
limits.
2. Measurements are made on production test board, which represents a trade-off between
optimal OIP3, P1dB and VSWR. Circuit losses have been deembedded from actual measurements.
Gamma Source
Mag
Ang (deg)
Gamma Load
Mag
Ang (deg)
OIP3
(dBm)
0.9
0.8179
-143.28
0.0721
124.08
2.0
0.7411
-112.36
0.4080
119.91
3.9
0.6875
-94.23
0.4478
174.74
5.8
0.5204
-75.91
0.3525
-120.13
Note:
Gain
(dB)
1. Typical describes additional product performance information that is not covered by the product warranty.
400
0.9V
350
Ids (mA)
300
0.8V
250
0.7V
200
150
0.6V
100
0.5V
50
0
Vds (V)
P1dB
(dBm)
PAE
(%)
45
45
40
40
40
35
35
35
3V
4V
5V
25
20
75
90
105
120
135
150
165
30
3V
4V
5V
25
20
75
180
90
105
Ids (mA)
135
150
165
20
75
180
18
18
12
17
17
10
16
15
14
120
135
150
165
15
14
3V
4V
5V
13
16
GAIN (dB)
GAIN (dB)
14
105
13
12
75
180
90
105
120
135
150
165
3V
4V
5V
90
105
120
135
150
165
3V
4V
5V
180
Ids (mA)
0
75
135
150
165
180
60
Gain_3V
Pout_3V
PAE_3V
90
105
120
135
150
165
180
40
15
30
10
20
10
0
-14
-10
Ids (mA)
50
20
-6
-2
10
Pin (dBm)
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
120
30
OIP3 (dBm)
GAIN (dB)
3V
4V
5V
90
105
25
25
180
Ids (mA)
30
165
0
75
180
35
150
40
135
Ids (mA)
120
3V
4V
5V
Ids (mA)
20
75
105
19
90
90
Ids (mA)
19
12
75
3V
4V
5V
25
Ids (mA)
GAIN (dB)
120
30
PAE (%)
30
OIP3 (dBm)
45
OIP3 (dBm)
OIP3 (dBm)
ATF-53189 Typical Performance Curves (at 25C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
15
30
10
20
10
10
20
10
0
-14
PAE (%)
30
-10
-6
Pin (dBm)
30
30
10
20
10
14
-2
PAE (%)
30
10
14
60
Gain_3V
Pout_3V
PAE_3V
25
15
30
10
20
10
14
18
20
10
10
0
-10
-6
-2
30
40
15
30
10
20
10
0
-10
Pin (dBm)
PAE (%)
20
14
18
10
14
18
30
Gain_3V
Pout_3V
PAE_3V
25
25
20
20
15
15
10
10
10
-6
-2
Pin (dBm)
10
14
18
22
Pin (dBm)
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
10
30
50
60
Gain_5V
Pout_5V
PAE_5V
-2
Pin (dBm)
-6
50
10
0
-10
40
30
25
14
15
10
40
10
-2
20
20
-6
50
10
-6
Pin (dBm)
30
20
0
-10
15
50
40
60
Gain_4V
Pout_4V
PAE_4V
-2
10
Pin (dBm)
30
-6
20
0
-10
10
60
Pin (dBm)
25
20
Gain_5V
Pout_5V
PAE_5V
25
15
-2
10
10
30
50
40
-6
30
60
Gain_4V
Pout_4V
PAE_4V
20
0
-10
15
Pin (dBm)
25
-2
40
-2
15
50
20
PAE (%)
-6
40
PAE (%)
-10
20
25
0
-14
50
60
Gain_3V
Pout_3V
PAE_3V
PAE (%)
40
25
30
PAE (%)
20
60
Gain_5V
Pout_5V
PAE_5V
PAE (%)
50
25
30
60
Gain_4V
Pout_4V
PAE_4V
PAE (%)
30
ATF-53189 Typical Performance Curves (at 25C unless specified otherwise), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA.
30
Gain_4V
Pout_4V
PAE_4V
25
20
20
15
15
10
10
5
0
-6
-2
10
14
18
22
30
Gain_5V
Pout_5V
PAE_5V
25
25
20
20
15
15
10
10
PAE (%)
25
30
-6
-2
Pin (dBm)
10
14
18
22
PAE (%)
30
Pin (dBm)
46
16
44
14
GAIN (dB)
OIP3 (dBm)
42
40
38
-40C
25C
80C
36
34
0.5
1.5
2.5
12
10
10
-40C
25C
80C
8
6
3.5
4.5
5.5
4
0.5
6.5
1.5
2.5
3.5
4.5
5.5
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
25
45
24
P1dB (dBm)
PAE (%)
40
35
30
-40C
25C
80C
25
20
0.5
1.5
2.5
23
22
-40C
25C
80C
21
3.5
4.5
5.5
FREQUENCY (GHz)
6.5
20
0.5
1.5
2.5
3.5
4.5
5.5
6.5
FREQUENCY (GHz)
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
ATF-53189 Typical Performance Curves (at 25C unless specified otherwie), continued
Tuned for Optimal OIP3 at Vd = 4.0V, Ids = 135 mA
45
18
17
40
35
GAIN (dB)
OIP3 (dBm)
16
30
15
14
13
3V
4V
5V
20
75
90
3V
4V
5V
12
105
120
135
150
165
11
180
75
90
105
120
Ids (mA)
30
30
10
20
10
14
15
30
10
20
10
10
0
-10
-6
-2
10
14
Pin (dBm)
60
Gain_5V
Pout_5V
PAE_5V
50
20
40
15
30
10
20
10
-6
-2
10
14
PAE (%)
25
50
40
Pin (dBm)
0
-10
60
20
PAE (%)
15
-2
180
Gain_4V
Pout_4V
PAE_4V
25
40
-6
165
30
50
20
0
-10
150
Gain_3V
Pout_3V
PAE_3V
25
135
Ids (mA)
PAE (%)
25
Pin (dBm)
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 4.0V, IDS = 180 mA
Freq. S11
S21
GHz Mag. Ang. dB Mag. Ang.
S12
dB Mag. Ang.
S22 MSG/MAG
Mag. Ang. dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.692 -163.7
0.738 -173.2
0.749 -177.6
0.752 179.3
0.756 175.7
0.755 173.5
0.755 171.4
0.753 169.4
0.755 167.5
0.753 165.6
0.753 158.4
0.752 150.1
0.768 142.3
0.766 135.5
0.773 131.8
0.779 123.3
0.793 102.9
0.806 84.7
0.809 69.9
0.844 54.6
0.882 37.0
0.896 27.1
0.872 20.3
0.916 7.0
0.877 -1.1
0.882 -7.5
0.865 -19.2
0.864 -26.2
0.856 -33.6
0.835 -42.5
31.0 35.531
110.9
25.6 19.023
97.1
22.2 12.872
90.4
19.7 9.705 85.7
17.7 7.687 84.4
16.2 6.438 81.7
14.9 5.582 79.2
13.9 4.939 76.5
12.9 4.433 73.8
12.1 4.026 70.9
9.3 2.910 59.6
6.5 2.123 45.9
4.3 1.647 33.4
2.3 1.304 21.1
0.5 1.062 11.3
-0.7 0.921 1.5
-3.5 0.669 -19.8
-5.8 0.515 -41.5
-8.2 0.389 -59.6
-10.2
0.308 -79.9
-12.4
0.239 -100.5
-14.6
0.187 -109.4
-16.0
0.158 -124.9
-17.7
0.131 -138.0
-19.2
0.110 -153.4
-21.0
0.089 -168.9
-21.4
0.085 177.8
-21.1
0.088 165.9
-18.9
0.114 155.2
-17.1
0.140 133.4
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.65
0.76
0.79
0.86
0.94
1.00
1.10
1.17
1.41
1.53
1.56
1.72
1.87
2.03
2.18
0.394
0.417
0.423
0.465
0.509
0.545
0.600
0.645
0.777
0.840
0.855
0.920
0.970
0.993
0.997
163.6
172.4
175.3
-165.4
-147.7
-134.6
-116.7
-103.3
-70.0
-56.1
-52.9
-39.0
-27.5
-19.1
-7.5
Rn/50
0.11
0.09
0.08
0.08
0.06
0.08
0.16
0.28
0.35
0.41
0.42
0.51
0.97
1.88
2.54
25.82
21.83
21.71
18.70
17.63
16.45
14.90
13.53
11.35
10.31
10.38
9.79
7.91
6.11
4.56
34.4
31.3
29.3
27.8
26.6
25.5
24.7
23.7
23.0
22.2
19.2
16.0
13.4
11.5
10.0
9.4
7.0
5.2
3.2
2.1
1.4
0.1
-1.8
-1.3
-4.4
-6.3
-7.2
-6.9
-4.7
-3.2
40
Ga
dB
MSG
30
0.544 -133.2
0.704 -158.7
0.777 -169.4
0.813 -176.1
0.856 178.5
0.866 174.5
0.872 170.9
0.874 167.5
0.876 164.1
0.880 161.0
0.881 150.2
0.882 137.1
0.879 124.9
0.874 112.7
0.882 99.5
0.889 92.6
0.903 78.2
0.918 61.3
0.948 41.2
0.960 24.3
0.941 11.8
0.946 10.8
0.937 0.3
0.914 -8.0
0.951 -12.1
0.948 -20.6
0.939 -23.6
0.948 -23.1
0.947 -24.3
0.903 -32.5
20
MAG
10
S21
0
-10
-20
10
12
14
16 18
FREQUENCY (GHz)
Notes:
1. Fmin values at 2GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 4.0V, IDS = 135 mA
Freq. S11
S21
GHz Mag. Ang. dB Mag. Ang.
S12
dB Mag. Ang.
S22 MSG/MAG
Mag. Ang. dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.692 -163.7
0.738 -173.2
0.749 -177.6
0.752 179.3
0.756 175.7
0.755 173.5
0.755 171.4
0.753 169.4
0.755 167.5
0.753 165.6
0.753 158.4
0.752 150.1
0.768 142.3
0.766 135.5
0.773 131.8
0.779 123.3
0.793 102.9
0.806 84.7
0.809 69.9
0.844 54.6
0.882 37.0
0.896 27.1
0.872 20.3
0.916 7.0
0.877 -1.1
0.882 -7.5
0.865 -19.2
0.864 -26.2
0.856 -33.6
0.835 -42.5
31.0 35.531
110.9
25.6 19.023
97.1
22.2 12.872
90.4
19.7 9.705 85.7
17.7 7.687 84.4
16.2 6.438 81.7
14.9 5.582 79.2
13.9 4.939 76.5
12.9 4.433 73.8
12.1 4.026 70.9
9.3 2.910 59.6
6.5 2.123 45.9
4.3 1.647 33.4
2.3 1.304 21.1
0.5 1.062 11.3
-0.7 0.921 1.5
-3.5 0.669 -19.8
-5.8 0.515 -41.5
-8.2 0.389 -59.6
-10.2
0.308 -79.9
-12.4
0.239 -100.5
-14.6
0.187 -109.4
-16.0
0.158 -124.9
-17.7
0.131 -138.0
-19.2
0.110 -153.4
-21.0
0.089 -168.9
-21.4
0.085 177.8
-21.1
0.088 165.9
-18.9
0.114 155.2
-17.1
0.140 133.4
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.30
0.41
0.44
0.53
0.62
0.69
0.80
0.89
1.16
1.31
1.34
1.52
1.71
1.89
2.07
0.162
0.291
0.302
0.369
0.433
0.484
0.556
0.613
0.764
0.832
0.848
0.914
0.963
0.991
0.998
150.8
161.3
164.2
-174.2
-154.6
-140.2
-120.6
-106.1
-71.0
-56.6
-53.4
-39.3
-27.9
-18.2
-9.2
Rn/50
0.05
0.05
0.05
0.04
0.04
0.05
0.10
0.19
0.26
0.30
0.30
0.39
0.77
0.96
1.58
26.27
22.12
22.02
18.95
17.05
15.87
14.63
13.21
11.19
10.26
10.04
9.64
8.68
6.57
4.51
34.4
31.3
29.3
27.8
26.6
25.5
24.7
23.7
23.0
22.2
19.2
16.0
13.4
11.5
10.0
9.4
7.0
5.2
3.2
2.1
1.4
0.1
-1.8
-1.3
-4.4
-6.3
-7.2
-6.9
-4.7
-3.2
40
Ga
dB
MSG
30
0.544 -133.2
0.704 -158.7
0.777 -169.4
0.813 -176.1
0.856 178.5
0.866 174.5
0.872 170.9
0.874 167.5
0.876 164.1
0.880 161.0
0.881 150.2
0.882 137.1
0.879 124.9
0.874 112.7
0.882 99.5
0.889 92.6
0.903 78.2
0.918 61.3
0.948 41.2
0.960 24.3
0.941 11.8
0.946 10.8
0.937 0.3
0.914 -8.0
0.951 -12.1
0.948 -20.6
0.939 -23.6
0.948 -23.1
0.947 -24.3
0.903 -32.5
20
MAG
10
S21
0
-10
-20
10
12
14
16 18
FREQUENCY (GHz)
Notes:
1. Fmin values at 2GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
10
ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 4.0V, IDS = 75 mA
Freq. S11
S21
GHz Mag. Ang. dB Mag. Ang.
S12
dB Mag. Ang.
S22 MSG/MAG
Mag. Ang. dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.692 -163.7
0.738 -173.2
0.749 -177.6
0.752 179.3
0.756 175.7
0.755 173.5
0.755 171.4
0.753 169.4
0.755 167.5
0.753 165.6
0.753 158.4
0.752 150.1
0.768 142.3
0.766 135.5
0.773 131.8
0.779 123.3
0.793 102.9
0.806 84.7
0.809 69.9
0.844 54.6
0.882 37.0
0.896 27.1
0.872 20.3
0.916 7.0
0.877 -1.1
0.882 -7.5
0.865 -19.2
0.864 -26.2
0.856 -33.6
0.835 -42.5
31.0 35.531
110.9
25.6 19.023
97.1
22.2 12.872
90.4
19.7 9.705 85.7
17.7 7.687 84.4
16.2 6.438 81.7
14.9 5.582 79.2
13.9 4.939 76.5
12.9 4.433 73.8
12.1 4.026 70.9
9.3 2.910 59.6
6.5 2.123 45.9
4.3 1.647 33.4
2.3 1.304 21.1
0.5 1.062 11.3
-0.7 0.921 1.5
-3.5 0.669 -19.8
-5.8 0.515 -41.5
-8.2 0.389 -59.6
-10.2
0.308 -79.9
-12.4
0.239 -100.5
-14.6
0.187 -109.4
-16.0
0.158 -124.9
-17.7
0.131 -138.0
-19.2
0.110 -153.4
-21.0
0.089 -168.9
-21.4
0.085 177.8
-21.1
0.088 165.9
-18.9
0.114 155.2
-17.1
0.140 133.4
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.32
0.41
0.43
0.49
0.56
0.61
0.69
0.75
0.95
1.05
1.08
1.21
1.34
1.47
1.60
0.175
0.224
0.235
0.306
0.375
0.428
0.507
0.569
0.738
0.814
0.831
0.907
0.961
0.992
0.996
127.6
143.8
148.3
173.6
-163.6
-147.2
-125.3
-109.3
-72.0
-57.4
-54.2
-40.5
-29.3
-19.3
-8.9
Rn/50
0.05
0.04
0.03
0.03
0.03
0.04
0.08
0.14
0.20
0.24
0.24
0.30
0.60
0.71
1.01
26.45
21.98
21.50
18.55
16.33
15.18
13.86
12.68
10.81
10.64
9.97
9.25
7.78
6.96
4.46
34.4
31.3
29.3
27.8
26.6
25.5
24.7
23.7
23.0
22.2
19.2
16.0
13.4
11.5
10.0
9.4
7.0
5.2
3.2
2.1
1.4
0.1
-1.8
-1.3
-4.4
-6.3
-7.2
-6.9
-4.7
-3.2
40
Ga
dB
MSG
30
0.544 -133.2
0.704 -158.7
0.777 -169.4
0.813 -176.1
0.856 178.5
0.866 174.5
0.872 170.9
0.874 167.5
0.876 164.1
0.880 161.0
0.881 150.2
0.882 137.1
0.879 124.9
0.874 112.7
0.882 99.5
0.889 92.6
0.903 78.2
0.918 61.3
0.948 41.2
0.960 24.3
0.941 11.8
0.946 10.8
0.937 0.3
0.914 -8.0
0.951 -12.1
0.948 -20.6
0.939 -23.6
0.948 -23.1
0.947 -24.3
0.903 -32.5
20
MAG
10
0
S21
-10
-20
-30
10
12
14
16 18
FREQUENCY (GHz)
Notes:
1. Fmin values at 2GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
11
ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 5.0V, IDS = 135 mA
Freq. S11
S21
GHz Mag. Ang. dB Mag. Ang.
S12
dB Mag. Ang.
S22 MSG/MAG
Mag. Ang. dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.692 -163.7
0.738 -173.2
0.749 -177.6
0.752 179.3
0.756 175.7
0.755 173.5
0.755 171.4
0.753 169.4
0.755 167.5
0.753 165.6
0.753 158.4
0.752 150.1
0.768 142.3
0.766 135.5
0.773 131.8
0.779 123.3
0.793 102.9
0.806 84.7
0.809 69.9
0.844 54.6
0.882 37.0
0.896 27.1
0.872 20.3
0.916 7.0
0.877 -1.1
0.882 -7.5
0.865 -19.2
0.864 -26.2
0.856 -33.6
0.835 -42.5
31.0 35.531
110.9
25.6 19.023
97.1
22.2 12.872
90.4
19.7 9.705 85.7
17.7 7.687 84.4
16.2 6.438 81.7
14.9 5.582 79.2
13.9 4.939 76.5
12.9 4.433 73.8
12.1 4.026 70.9
9.3 2.910 59.6
6.5 2.123 45.9
4.3 1.647 33.4
2.3 1.304 21.1
0.5 1.062 11.3
-0.7 0.921 1.5
-3.5 0.669 -19.8
-5.8 0.515 -41.5
-8.2 0.389 -59.6
-10.2
0.308 -79.9
-12.4
0.239 -100.5
-14.6
0.187 -109.4
-16.0
0.158 -124.9
-17.7
0.131 -138.0
-19.2
0.110 -153.4
-21.0
0.089 -168.9
-21.4
0.085 177.8
-21.1
0.088 165.9
-18.9
0.114 155.2
-17.1
0.140 133.4
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.36
0.46
0.49
0.59
0.69
0.77
0.88
0.98
1.28
1.44
1.48
1.68
1.88
2.08
2.28
0.266
0.315
0.327
0.388
0.448
0.495
0.563
0.617
0.764
0.830
0.845
0.912
0.960
0.988
0.994
149.9
162.4
165.6
-172.7
-153.0
-138.6
-116.3
-104.9
-70.5
-56.5
-53.4
-39.7
-28.3
-18.3
-8.5
Rn/50
0.05
0.04
0.04
0.04
0.04
0.06
0.12
0.21
0.31
0.37
0.38
0.42
0.84
1.24
1.78
26.51
22.79
22.09
18.92
17.04
15.87
14.50
13.11
11.19
10.10
10.08
9.39
8.78
8.05
4.74
34.4
31.3
29.3
27.8
26.6
25.5
24.7
23.7
23.0
22.2
19.2
16.0
13.4
11.5
10.0
9.4
7.0
5.2
3.2
2.1
1.4
0.1
-1.8
-1.3
-4.4
-6.3
-7.2
-6.9
-4.7
-3.2
40
Ga
dB
MSG
30
0.544 -133.2
0.704 -158.7
0.777 -169.4
0.813 -176.1
0.856 178.5
0.866 174.5
0.872 170.9
0.874 167.5
0.876 164.1
0.880 161.0
0.881 150.2
0.882 137.1
0.879 124.9
0.874 112.7
0.882 99.5
0.889 92.6
0.903 78.2
0.918 61.3
0.948 41.2
0.960 24.3
0.941 11.8
0.946 10.8
0.937 0.3
0.914 -8.0
0.951 -12.1
0.948 -20.6
0.939 -23.6
0.948 -23.1
0.947 -24.3
0.903 -32.5
20
MAG
10
S21
0
-10
-20
10
12
14
16 18
FREQUENCY (GHz)
Notes:
1. Fmin values at 2GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
12
ATF-53189 Typical Scattering and Noise Parameters at 25C, VDS = 3.0V, IDS = 135 mA
Freq. S11
S21
GHz Mag. Ang. dB Mag. Ang.
S12
dB Mag. Ang.
S22 MSG/MAG
Mag. Ang. dB
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
0.692 -163.7
0.738 -173.2
0.749 -177.6
0.752 179.3
0.756 175.7
0.755 173.5
0.755 171.4
0.753 169.4
0.755 167.5
0.753 165.6
0.753 158.4
0.752 150.1
0.768 142.3
0.766 135.5
0.773 131.8
0.779 123.3
0.793 102.9
0.806 84.7
0.809 69.9
0.844 54.6
0.882 37.0
0.896 27.1
0.872 20.3
0.916 7.0
0.877 -1.1
0.882 -7.5
0.865 -19.2
0.864 -26.2
0.856 -33.6
0.835 -42.5
31.0 35.531
110.9
25.6 19.023
97.1
22.2 12.872
90.4
19.7 9.705 85.7
17.7 7.687 84.4
16.2 6.438 81.7
14.9 5.582 79.2
13.9 4.939 76.5
12.9 4.433 73.8
12.1 4.026 70.9
9.3 2.910 59.6
6.5 2.123 45.9
4.3 1.647 33.4
2.3 1.304 21.1
0.5 1.062 11.3
-0.7 0.921 1.5
-3.5 0.669 -19.8
-5.8 0.515 -41.5
-8.2 0.389 -59.6
-10.2
0.308 -79.9
-12.4
0.239 -100.5
-14.6
0.187 -109.4
-16.0
0.158 -124.9
-17.7
0.131 -138.0
-19.2
0.110 -153.4
-21.0
0.089 -168.9
-21.4
0.085 177.8
-21.1
0.088 165.9
-18.9
0.114 155.2
-17.1
0.140 133.4
Freq
GHz
Fmin
dB
Gamma Opt
Mag
Ang
0.5
0.9
1.0
1.5
2.0
2.4
3.0
3.5
5.0
5.8
6.0
7.0
8.0
9.0
10.0
0.34
0.43
0.45
0.53
0.61
0.68
0.78
0.86
1.10
1.24
1.27
1.43
1.60
1.76
1.93
0.225
0.282
0.296
0.362
0.427
0.478
0.551
0.608
0.763
0.832
0.848
0.915
0.964
0.991
0.995
146.2
157.0
160.2
-177.0
-156.3
-141.3
-121.1
-106.2
-70.8
-56.6
-53.5
-39.7
-28.4
-18.5
-8.6
Rn/50
0.05
0.04
0.04
0.03
0.03
0.05
0.09
0.17
0.24
0.28
0.30
0.38
0.74
0.95
1.55
26.30
22.19
22.07
19.00
17.13
15.89
14.59
13.17
11.22
10.16
9.93
9.57
8.78
7.27
3.39
34.4
31.3
29.3
27.8
26.6
25.5
24.7
23.7
23.0
22.2
19.2
16.0
13.4
11.5
10.0
9.4
7.0
5.2
3.2
2.1
1.4
0.1
-1.8
-1.3
-4.4
-6.3
-7.2
-6.9
-4.7
-3.2
40
Ga
dB
MSG
30
0.544 -133.2
0.704 -158.7
0.777 -169.4
0.813 -176.1
0.856 178.5
0.866 174.5
0.872 170.9
0.874 167.5
0.876 164.1
0.880 161.0
0.881 150.2
0.882 137.1
0.879 124.9
0.874 112.7
0.882 99.5
0.889 92.6
0.903 78.2
0.918 61.3
0.948 41.2
0.960 24.3
0.941 11.8
0.946 10.8
0.937 0.3
0.914 -8.0
0.951 -12.1
0.948 -20.6
0.939 -23.6
0.948 -23.1
0.947 -24.3
0.903 -32.5
20
MAG
10
S21
0
-10
-20
10
12
14
16 18
FREQUENCY (GHz)
Notes:
1. Fmin values at 2GHz and higher are based on measurements while the Fmin below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead.
13
Ordering Information
Part Number
No. of Devices
Container
ATF-53189-TR1
3000
13 Reel
ATF-53189-BLK
100
Anti-static bag
POLISH
E1
OR
E
L
e
S
e1
MATTE FINISH
DIMENSIONS IN MILLIMETERS
A
14
b1
POLISH
DIMENSIONS IN INCHES
SYMBOLS
MIN
NOM
MAX
MIN
NOM
MAX
1.40
1.50
1.60
0.055
0.059
0.063
0.89
1.04
1.20
0.0350
0.041
0.047
0.36
0.42
0.48
0.014
0.016
0.018
b1
0.41
0.47
0.53
0.016
0.018
0.030
0.38
0.40
0.43
0.014
0.015
0.017
4.40
4.50
4.60
0.173
0.177
0.181
D1
1.40
1.60
1.75
0.055
0.062
0.069
3.94
4.25
0.155
0.167
E1
2.40
2.50
2.60
0.094
0.098
0.102
e1
2.90
3.00
3.10
0.114
0.118
0.122
0.35
0.40
0.45
0.014
0.016
0.018
0.65
0.75
0.85
0.026
0.030
0.034
1.40
1.50
1.60
0.054
0.059
0.063
Device Orientation
USER FEED
DIRECTION
2GX
2GX
2GX
CARRIER
TAPE
2GX
REEL
COVER TAPE
Tape Dimensions
1.5 +0.1/-0.0
8.00
0.30 .05
1.50 MIN.
R 0.3 MAX.
1.75 .10
5.50 .05
SEE NOTE 3
Bo
12.0 .3
Ko
SECTION A - A
15
Ao
Ao = 4.60
Bo = 4.90
Ko = 1.90
R 0.3 TYP.
DIMENSIONS IN MM
NOTES:
1. 10 SPROCKET HOLE PITCH CUMULATIVE TOLERANCE 0.2
2. CAMBER IN COMPLIANCE WITH EIA 481
3. POCKET POSITION RELATIVE TO SPROCKET HOLE MEASURED
AS TRUE POSITION OF POCKET, NOT POCKET HOLE
LOKREEL
MINNEAPOLIS USA
U.S PAT 4726534
102.0
REF
1.5
ATTENTION
Electrostatic Sensitive Devices
Safe Handling Required
88 REF
330.0
REF
"A"
96.5
6
PS
Detail "B"
6
PS
Detail "A"
+0.3
(MEASURED AT HUB)
8.4 - 0.2
(MEASURED AT HUB)
11.1 MAX.
20.2
Dimensions in mm
M IN
+0.5
13.0 -0.2
2.0 0.5
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3893EN
AV02-0051EN - November 2, 2012