CGH40180PP

180 W, RF Power GaN HEMT

Crees CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.

Package Type s: 440199 PN: CGH4018 0PP

FEATURES
Up to 2.5 GHz Operation 20 dB Small Signal Gain at 1.0 GHz 15 dB Small Signal Gain at 2.0 GHz 220 W typical PSAT 70 % Efficiency at PSAT 28 V Operation

APPLICATIONS
2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

ober 2013 Rev 2.0 Oct

Subject to change without notice. www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature

Parameter Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque Thermal Resistance, Junction to Case Case Operating Temperature3,4
3

Symbol VDSS VGS TSTG TJ IGMAX IDMAX TS

Rating 84 -10, +2 -65, +150 225 60 24 245 80 0.9 -40, +150

Units Volts Volts C C mA A C in-oz C/W C

Conditions 25C 25C

25C 25C

RJC TC

85C 30 seconds

Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp 3 CGH40180PP at PDISS = 224 W. 4 See also, the Power Dissipation De-rating Curve on Page 6.

Electrical Characteristics (TC = 25C)

Characteristics DC Characteristics1 Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current2 Drain-Source Breakdown Voltage RF Characteristics Power Gain Small Signal Gain Power Output at Saturation5 Drain Efficiency6 Output Mismatch Stress Dynamic Characteristics7 Input Capacitance Output Capacitance Feedback Capacitance
1 3,4

Symbol

Min.

Typ.

Max.

Units

Conditions

VGS(th) VGS(Q) IDS VBR

-3.8 46.4 120

-3.0 -2.7 56.0

-2.3

VDC VDC A VDC

VDS = 10 V, ID = 57.6 mA VDS = 28 V, ID = 2.0 A VDS = 6.0 V, VGS = 2.0 V VGS = -8 V, ID = 57.6 mA

(TC = 25C, F0 = 1.3 GHz unless otherwise noted) PG GSS PSAT

13 180 56

19 220 65

10 : 1

dB dB W % Y

VDD = 28 V, IDQ = 2.0 A, POUT = PSAT VDD = 28 V, IDQ = 2.0 A VDD = 28 V, IDQ = 2.0 A VDD = 28 V, IDQ = 2.0 A, POUT = PSAT No damage at all phase angles, VDD = 28 V, IDQ = 2.0 A, POUT = 180 W CW

VSWR

CGS CDS CGD

35.7 9.6 1.6

pF pF pF

VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz

Notes: Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGH40180PP-TB, including all coupler losses. 4 IDQ of 2.0 A is by biasing each device at 1.0 A. 5 PSAT is defined as: Q1 or Q2 = IG = 2.8 mA. 6 Drain Efficiency = POUT / PDC
7

Capacitance values are for each side of the device.

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Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

Typical Performance

Gain and Return Loss vs Frequency of the CGH40180PP measured in Broadband Amplifier Circuit CGH40180PP-TB VDD = 28 V, IDQ = 2.0 A, Freq = 0.8 - 1.7 GHz S-parameter CGH40180PP
24 10

21 S21 18

15

-5 S11

S21 (dB)

12

-10

9 S21 6 S11 3

-15

-20

-25

0 800 900 1000 1100 1200 1300 1400 1500 1600

-30 1700

Frequency (MHz)

Output Power and Drain Efficiency vs Frequency of the CGH40180PP measured in Broadband Amplifier Circuit CGH40180PP-TB VDD = 28 V, IDQ 2.0 A Power and Efficiency vs= Frequency
250 235 220 205 Psat 100% 90% 80% 70% 60% 50% 40% Psat Efficiency 30% 20% 10% 0% 1300

Output Power (W)

190 175 160 145 130 115 100 1100

1150

1200

1250

Frequency (MHz)

Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

Drain Efficiency
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Drain Efficiency

S11 (dB)

Typical Performance

Gain and Drain Efficiency vs Output Power of the CGH40180PP in Broadband Amplifier Circuit CGH40180PP-TB VDD = 28 V, IDQ = 2.0 A
22 gain 1100 20 eff 1100 gain 1150 eff 1150 gain 1200 eff 1200 gain 1250 eff 1250 gain 1300 eff 1300 70% 80%

18 Gain

60%

14 Drain Efficiency

40%

12

30%

10

20%

10%

6 30 32 34 36 38 40 42 44 46 48 50 52 54

0%

Output Power (dBm)

Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

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Drain Efficiency

16

50%

Gain (dB)

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH40180PP VDD = 28 V, IDQ = 1.0 A

MAG (dB)

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40180PP VDD = 28 V, IDQ = 1 A

Minimum Noise Figure (dB)

Electrostatic Discharge (ESD) Classifications

Parameter Human Body Model Charge Device Model Symbol HBM CDM Class 1A > 250 V 1 < 200 V Test Methodology JEDEC JESD22 A114-D JEDEC JESD22 C101-C

Noise Resistance (Ohms)

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Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

K Factor

CGH40180PP Power Dissipation De-rating Curve

CGH40180PP CW Power Dissipation De-rating Curve
250

200

Power Dissipation (W)

150

100 Note 1 50

0 0 25 50 75 100 125 150 175 200 225 250

Maximum Case Temperature (C)

Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).

CGH40180PP Transient Power Dissipation De-rating Curve

250

CGH40180PP Transient Power Dissipation De-Rating Curve

200

Power Dissipation (W)

150

100 Note 1 50

0 0 25 50 75 100 125 150 175 200 225 250

Maximum Case Temperature (C)

Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Note 2. This transient de-rating curve assumes a 1msec pulse with a 20% duty cycle with no power dissipated during the off-cycle.

Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf

Thermal Resistance as a Function of Pulse Width

Heating Curve for 2x28.8mm GaN HEMT in 440199 Package at 4W/mm
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.00E-08

Rth (C/W)

1.00E-07

1.00E-06

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-01

1.00E+00

Note 1: This heating curve assumes zero power dissipation during the off portion of the duty cycle. Note 2: This data is for transient power dissipation at 224 W, Duty Cycle = 20 %.

Time (seconds)

Simulated Source and Load Impedances

D1 Z Source 1 G1 Z Load 1

G2 Z Source 2 D2 Z Load 2

Frequency (MHz) 500 1000 1500 2000 2500 3000

Z Source 2.85 + j1.99 0.8 + j0.42 0.84 - j1.69 0.88 - j3.05 1.08 - j4.5 1.25 - j6.06

Z Load 5.27 + j0.68 4.91 + j0.36 4.65 - j0.24 2.8 - j1.05 3.1 - j2.47 3.1 - j4.01

Note 2. Optimized for power gain, PSAT and PAE. be used to maintain amplifier stability.

Note 1. VDD = 28V, IDQ = 2.0 A in the 440199 package.

Note 3. When using this device at low frequency, series resistors should

Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf

CGH40180PP-TB Demonstration Amplifier Circuit Schematic

CGH40180PP-TB Demonstration Amplifier Circuit Outline

Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf

CGH40180PP-TB Demonstration Amplifier Circuit Bill of Materials

Designator R1 R10,R20 R30,R40 C1,C2,C3,C4,C30,C40,C70,C80 C10,C11,C13,C14,C20,C21,C23,C24 C12,C22 C15,C19,C25,C29 C16,C26 C17,C27 C31,C41 C32,C42 C34,C44,C72,C82 C35,C45 C50,C51,C60,C61 C52,C62 C53,C63 C54,C64 C55,C65 C73,C83 C74,C84 L10,L20 L30,L40 J1,J2 J3,J4 Q1

Description RES, 100 Ohm, +/-1%, 1 W, 2512 RES, 511 Ohm, +/- 5%, 1/16W, 0603 RES, 1/16W, 0603, 1%, 5.1 OHMS CAP, 27 pF,+/-5% 0805,ATC600F CAP, 3.9PF, +/-0.1 pF, 0603, ATC600S CAP, 3.3PF, +/-0.1 pF, 0603, ATC600S CAP, 1.8PF, +/-0.1 pF, 0603, ATC600S CAP, 1.0PF, +/-0.1 pF, 0603, ATC600S CAP, 0.9PF, +/-0.1 pF, 0603, ATC600S CAP, 100 pF,+/-5%, 0603,ATC600S CAP, 470 pF, 5%, 100V, 0603, X7R CAP, 33000 pF, 0805, 100V, X7R CAP, 10 uF, 16V, TANTALUM CAP, 5.6 pF, +/-0.1 pF, 0805, ATC600F CAP, 2.7 pF, +/-0.1 pF, 0805, ATC600F CAP, 2.2 pF, +/-0.1 pF, 0805, ATC600F CAP, 1.1 pF, +/-0.05 pF, 0805, ATC600F CAP, 0.5 pF, +/-0.05 pF, 0805, ATC600F CAP, 1.0 uF, +/-10%, 1210, 100V, X7R CAP, 33 uF, 100V, ELECT, FK, SMD IND, 6.8 nH, 0603, L-14C6N8ST FERRITE, 220 OHM, 0603, BLM21PG221SN1 CONN, N-Type, Female, 0.500 SMA Flange CONN, Header, RT> PLZ, 0.1 CEN, LK, 9 POS PCB, RO4350, Er = 3.48, h = 20 mil CGH40180PP

Qty 1 2 2 8 8 2 4 2 2 2 2 4 2 4 2 2 2 2 2 2 2 2 2 2 1 1

CGH40180PP-TB Demonstration Amplifier Circuit

Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

CGH40180PP Rev 2.0

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf

Typical Package S-Parameters for CGH40180PP, Single Side (Small Signal, VDS = 28 V, IDQ = 1000 mA, angle in degrees)
Frequency 500 MHz 600 MHz 700 MHz 800 MHz 900 MHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz 1.4 GHz 1.5 GHz 1.6 GHz 1.7 GHz 1.8 GHz 1.9 GHz 2.0 GHz 2.1 GHz 2.2 GHz 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz 3.2 GHz 3.4 GHz 3.6 GHz 3.8 GHz 4.0 GHz 4.2 GHz 4.4 GHz 4.6 GHz 4.8 GHz 5.0 GHz 5.2 GHz 5.4 GHz 5.6 GHz 5.8 GHz 6.0 GHz Mag S11 0.957 0.957 0.957 0.957 0.957 0.957 0.957 0.957 0.957 0.956 0.956 0.956 0.956 0.955 0.955 0.955 0.954 0.954 0.953 0.952 0.952 0.951 0.950 0.949 0.948 0.946 0.943 0.939 0.935 0.929 0.922 0.913 0.901 0.886 0.866 0.838 0.799 0.742 0.658 0.534 0.373 Ang S11 -177.48 -178.74 -179.78 179.32 178.51 177.76 177.06 176.38 175.72 175.08 174.44 173.81 173.18 172.55 171.91 171.27 170.62 169.96 169.29 168.60 167.90 167.18 166.45 165.69 164.91 164.10 162.39 160.55 158.53 156.31 153.83 151.03 147.82 144.10 139.68 134.36 127.78 119.49 108.92 95.85 82.93 Mag S21 4.22 3.51 3.00 2.62 2.33 2.09 1.90 1.73 1.60 1.48 1.38 1.29 1.22 1.15 1.09 1.04 0.99 0.95 0.91 0.87 0.84 0.82 0.79 0.77 0.75 0.73 0.71 0.69 0.67 0.67 0.67 0.68 0.69 0.72 0.76 0.81 0.88 0.97 1.08 1.21 1.34 Ang S21 79.26 76.30 73.47 70.74 68.08 65.49 62.95 60.46 58.02 55.63 53.29 50.98 48.72 46.50 44.32 42.17 40.06 37.98 35.93 33.91 31.92 29.95 28.00 26.07 24.15 22.24 18.45 14.64 10.80 6.86 2.78 -1.51 -6.12 -11.16 -16.81 -23.30 -30.99 -40.41 -52.33 -67.76 -87.69 Mag S12 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.007 0.008 0.008 0.008 0.008 0.008 0.009 0.009 0.009 0.010 0.010 0.011 0.011 0.012 0.013 0.013 0.014 0.015 0.016 0.018 0.020 0.023 0.027 0.031 0.036 0.042 0.049 0.059 0.073 0.091 0.117 0.157 0.219 0.321 Ang S12 10.74 12.14 13.71 15.38 17.15 18.99 20.87 22.80 24.73 26.66 28.57 30.44 32.25 33.98 35.62 37.17 38.61 39.93 41.14 42.22 43.18 44.01 44.73 45.32 45.79 46.15 46.53 46.47 45.97 45.03 43.63 41.72 39.23 36.07 32.05 26.92 20.30 11.55 -0.34 -16.90 -40.38 Mag S22 0.798 0.800 0.802 0.804 0.807 0.809 0.812 0.814 0.817 0.820 0.823 0.825 0.828 0.831 0.833 0.835 0.838 0.840 0.842 0.844 0.845 0.847 0.848 0.849 0.850 0.850 0.851 0.850 0.848 0.845 0.841 0.834 0.825 0.813 0.797 0.775 0.747 0.708 0.657 0.594 0.534 Ang S22 -179.16 -179.41 -179.63 -179.84 179.96 179.74 179.52 179.28 179.03 178.76 178.46 178.15 177.82 177.47 177.10 176.71 176.30 175.87 175.42 174.95 174.47 173.96 173.44 172.89 172.33 171.74 170.51 169.19 167.76 166.21 164.53 162.69 160.65 158.39 155.86 153.00 149.76 146.16 142.31 138.62 134.70

Download this s-parameter file in .s2p format at http://www.cree.com/products/wireless_s-parameters.asp

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf

Copyright 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc.

10

CGH40180PP Rev 2.0

Product Dimensions CGH40180PP (Package Type 440199)

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11

CGH40180PP Rev 2.0

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf

Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customers technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/wireless Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639

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12

CGH40180PP Rev 2.0

Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.CREE Fax: +1.919.869.2733 www.cree.com/rf