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VDSS 60 V
ID 12 A
TYPICAL RDS(on) = 0.1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS I HIGH CURRENT, HIGH SPEED SWITCHING I SOLENOID AND RELAY DRIVERS I REGULATORS I DC-DC & DC-AC CONVERTERS I MOTOR CONTROL, AUDIO AMPLIFIERS I AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
(G ) Pulse width limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet
August 2002
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THERMAL DATA
Rthj-case Rthj-amb Rthc-s Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 3.75 62.5 0.5 300 C/W C/W C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax) Single pulse Avalanche Energy (starting Tj = 25C, ID =IAR,VDD = 25 V Max Value 12 50 Unit A mJ
ON (1)
Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250 A VGS = 10 V, ID = 7 A VDS> ID(on) X RDS(on)max VGS = 10V 12 Min. 2 Typ. 2.9 0.1 Max. 4 0.15 Unit V A
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS= ID(on) X RDS(on)max , ID = 6 A VDS = 25 V, f = 1 MHz, V GS = 0 Min. 4 Typ. 6 760 100 30 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING RESISTIVE LOAD
Symbol td(on) tr td(off) tf Qg Qgs Qgd Parameter Turn-on Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30 V, ID = 7 A RG = 50 VGS = 10V (see test circuit) ID = 12 A,VGS = 10 V, VDD = 40V (see test circuit) Min. Typ. 20 65 70 35 15 7 5 Max. Unit ns ns ns ns nC nC nC
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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D1
L2
F1
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
H2
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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