CNY70

Vishay Telefunken

Reflective Optical Sensor with Transistor Output

Description
The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object. The operating wavelength is 950 nm. The detector consists of a phototransistor.

Applications
D Optoelectronic scanning and switching devices
i.e., index sensing, coded disk scanning etc. (optoelectronic encoder assemblies for transmission sensing).

94 9320

Features
Marking aerea

D Compact construction in center-to-center spacing

of 0.1

D No setting required D High signal output D Low temperature coefficient D Detector provided with optical filter D Current Transfer Ratio (CTR) of typical 5%

Top view

95 10930

Order Instruction
Ordering Code CNY70 Sensing Distance 0.3 mm Remarks

Document Number 83751 Rev. A4, 05Apr00

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CNY70
Vishay Telefunken Absolute Maximum Ratings
Input (Emitter)
Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 50 3 100 100 Unit V mA A mW C

tp 10 ms Tamb 25C

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC PV Tj Value 32 7 50 100 100 Unit V V mA mW C

Tamb 25C

Coupler
Parameter Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions Tamb 25C Symbol Ptot Tamb Tstg Tsd Value 200 55 to +85 55 to +100 260 Unit mW C C C

2 mm from case, t 5 s

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Document Number 83751 Rev. A4, 05Jun00

CNY70
Vishay Telefunken Electrical Characteristics (Tamb = 25C)
Input (Emitter)
Parameter Forward voltage Test Conditions IF = 50 mA Symbol VF Min. Typ. 1.25 Max. 1.6 Unit V

Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 5 Typ. Max. Unit V V nA

200

Coupler
Parameter Collector current Test Conditions Symbol Min. Typ. VCE = 5 V, IF = 20 mA, IC1) 0.3 1.0 d = 0.3 mm (figure 1) Cross talk current VCE = 5 V, IF = 20 mA ICX2) (figure 1) Collector emitter satuIF = 20 mA, IC = 0.1 mA, VCEsat1) ration voltage d = 0.3 mm (figure 1) 1) Measured with the Kodak neutral test card, white side with 90% diffuse reflectance 2) Measured without reflecting medium Max. Unit mA nA V

600 0.3

Reflecting medium (Kodak neutral test card)

~ ~ ~

~ ~ ~
Emitter

Detector

95 10808

Figure 1. Test circuit

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CNY70
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
300 P tot Total Power Dissipation ( mW ) IC Collector Current ( mA ) 10 Kodak Neutral Card (White Side) d=0.3 VCE=5V

Coupled device 200

0.1

Phototransistor 100 IR-diode

0.01

0 0
95 11071

0.001 25 50 75 100
95 11065

0.1

10

100

Tamb Ambient Temperature ( C )

IF Forward Current ( mA )

Figure 2. Total Power Dissipation vs. Ambient Temperature

1000.0 I C Collector Current ( mA )

Figure 5. Collector Current vs. Forward Current

10 Kodak Neutral Card (White Side) d=0.3 1 IF = 50 mA 20 mA 10 mA 5 mA 0.1 2 mA 1 mA 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF Forward Voltage ( V )
95 11066

I F Forward Current ( mA )

100.0

10.0

1.0

0.1
96 11862

0.1

10

100

VCE Collector Emitter Voltage ( V )

Figure 3. Forward Current vs. Forward Voltage

CTR rel Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 30 20 10 0 10 20 30 40 50 60 70 80 Tamb Ambient Temperature ( C )

Figure 6. Collector Current vs. Collector Emitter Voltage

100.0 CTR Current Transfer Ratio ( % )

VCE=5V IF=20mA d=0.3

Kodak neutral card (white side) 10.0

1.0 VCE=5V d=0.3 0.1 0.1

1.0

10.0

100.0

96 11913

96 11914

IF Forward Current ( mA )

Figure 4. Relative Current Transfer Ratio vs. Ambient Temperature

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Figure 7. Current Transfer Ratio vs. Forward Current

Document Number 83751 Rev. A4, 05Jun00

CNY70
Vishay Telefunken
10.0 CTR Current Transfer Ratio ( % ) I e rel Relative Radiant Intensity I c rel Relative Collector Current IF=50mA 0 10 20 30

1mA 20mA 1.0 5mA 2mA Kodak neutral card (white side) d=0.3 0.1 0.1 10mA

40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6

1.0

10.0

100.0
95 11063

96 12001

VCE Collector Emitter Voltage ( V )

Figure 8. Current Transfer Ratio vs. Collector Emitter Voltage

10 I C Collector Current ( mA )

Figure 10. Relative Radiant Intensity/Collector Current vs. Displacement

1 d

0.1 VCE=5V IF=20mA 0.001 0 2 4 6 8 10

95 11069

d Distance ( mm )

Figure 9. Collector Current vs. Distance

1.0 I Crel Relative Collector Current 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
96 11915

d = 5 mm 4 mm 3 mm 2 mm 1 mm 0 VCE = 5 V IF = 20 mA

1.5 D d E D

0 s 5mm 10mm 0 s 5mm 10mm

10

11

s Displacement ( mm )

Figure 11. Relative Collector Current vs. Displacement

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CNY70
Vishay Telefunken Dimensions of CNY70 in mm

95 11345

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Document Number 83751 Rev. A4, 05Jun00

CNY70
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

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