Advanced Power MOSFET

FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.)
1 2 3

IRF630A
BVDSS = 200 V RDS(on) = 0.4 ID = 9 A
TO-220

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
1 O
o o

Value 200 9 5.7 36 + _ 30 162 9 7.2 5.0 72 0.57 - 55 to +150

Units V A A V mJ A mJ V/ns W W/ oC

O 1 O 1 O 3 O
2

300

Thermal Resistance
Symbol R R
JC CS

Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient

Typ. -0.5 --

Max. 1.74 -62.5

Units
o

C /W

R JA

Rev. B

1999 Fairchild Semiconductor Corporation

IRF630A
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( Miller ) Charge Min. Typ. Max. Units 200 -2.0 -----------------0.21 ------3.87 500 95 45 13 13 30 18 22 4.3 10.9 --4.0 100 -100 10 100 0.4 -650 110 55 40 40 70 50 29 --nC ns pF A V V nA

N-CHANNEL POWER MOSFET

Electrical Characteristics (TC=25 oC unless otherwise specified)

Test Condition VGS=0V,ID=250 A See Fig 7 VDS=5V,ID=250 A VGS=30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=4.5A VDS=40V,ID=4.5A
4 O 4 O
o

V/ oC ID=250 A

VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=9A, RG=12 See Fig 13 VDS=160V,VGS=10V, ID=9A See Fig 6 & Fig 12
4 O 5 O 4 O 5 O

Source-Drain Diode Ratings and Characteristics

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
1 O

Min. Typ. Max. Units --------137 0.68 9 36 1.5 --A V ns C

Test Condition Integral reverse pn-diode in the MOSFET TJ=25 oC ,IS=9A,VGS=0V TJ=25 C ,IF=9A diF/dt=100A/ s
4 O
o

O
4

Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=3mH, I =9A, V =50V, R =27 , Starting T =25 C O AS DD G J _ _ 3 ISD < _ 9A, di/dt < 220A/ s, VDD < BVDSS , Starting T J =25 oC O _ 2% Pulse Test : Pulse Width = 250 s, Duty Cycle < 4 O Essentially Independent of Operating Temperature 5 O

N-CHANNEL POWER MOSFET

Fig 1. Output Characteristics
VGS

IRF630A
Fig 2. Transfer Characteristics
[A] ID , Drain Current

[A]

Top :

101

ID , Drain Current

15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V

101

100

100

150 oC 25 oC @ Notes : =0V 1. V GS 2. V = 40 V DS 3. 250 s Pulse Test 6 8 10

10-1

@ Notes : 1. 250 s Pulse Test 2. T = 25 oC C 100 101

- 55 oC 10-1

10-1

VDS , Drain-Source Voltage [V] [A]

VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

RDS(on) , [ ] Drain-Source On-Resistance
1 . 0 0

Fig 4. Source-Drain Diode Forward Voltage

0 . 7 5

VGS = 10 V

IDR , Reverse Drain Current

1 01

0 . 5 0

1 00

0 . 2 5

V GS = 20 V @N o t e : TJ = 2 5 oC

1 5 0 oC 2 5 oC 1 0-1 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2

@N o t e s: 1 . VGS = 0 V 2 .2 5 0 s P u l s eT e s t 1 . 4 1 . 6 1 . 8

0 . 0 0 0 5 10 15 20 25 3 0 3 5

ID , Drain Current [A]

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

8 0 0 Ciss= Cgs+ C h o r t e d) gd ( C ds= s Coss= Cds+ C gd

Fig 6. Gate Charge vs. Gate-Source Voltage

[V]
V 0V DS = 4 1 0 VDS = 1 0 0V VDS = 1 6 0V

[pF]

6 0 0

4 0 0 C oss @N o t e s: 1 . VGS = 0 V 2 0 0 C rss 2 .f=1M H z

VGS , Gate-Source Voltage

C iss

Crss= Cgd

Capacitance

@N o t e s : ID = 9 . 0A 0 0 5 1 0 1 5 2 0 2 5

00 10

1 10

VDS , Drain-Source Voltage [V]

QG , Total Gate Charge [nC]

IRF630A
BVDSS , (Normalized) Drain-Source Breakdown Voltage

N-CHANNEL POWER MOSFET

Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized) Drain-Source On-Resistance
3.0

Fig 7. Breakdown Voltage vs. Temperature

1.2

2.5

1.1

2.0

1.0

1.5

1.0 @ Notes : 1. V = 10 V GS 2. I = 4.5 A D

0.9

@ Notes : =0V 1. V GS = 250 A 2. I D

0.5

0.8 -75

-50

-25

25

50

75

100

125

150

175

0.0 -75

-50

-25

25

50

75

100

125

150

175

TJ , Junction Temperature [ oC]

TJ , Junction Temperature [ oC]

Fig 9. Max. Safe Operating Area

[A]
2 10

Fig 10. Max. Drain Current vs. Case Temperature

10

Operation in This Area is Limited by R DS(on) 100 s

[A]
1 ms 10 ms

ID , Drain Current

1 10

ID , Drain Current

DC
0 10

10-1

@ Notes : = 25 oC 1. T C 2. T = 150 oC J 3. Single Pulse

10-2 0 10

1 10

102

0 25

50

75

100

125

150

VDS , Drain-Source Voltage [V]

Tc , Case Temperature [ oC]

Fig 11. Thermal Response

Thermal Response

100

D=0.5 @ Notes : 1. Z J C (t)=1.74

0.2 0.1 10- 1 0.05 0.02 0.01 single pulse

o C/W

Max.

2. Duty Factor, D=t /t2 1 3. TJ M -TC =PD M *Z J C (t)

Z JC(t) ,

PDM t1 t2

10- 2 10- 5

10- 4

10- 3

10- 2

10- 1

100

101

t 1 , Square Wave Pulse Duration

[sec]

N-CHANNEL POWER MOSFET

Fig 12. Gate Charge Test Circuit & Waveform

IRF630A

Current Regulator
50K 12V 200nF 300nF

Same Type as DUT

VGS Qg
10V

VDS VGS DUT

3mA

Qgs

Qgd

R1
Current Sampling (IG) Resistor

R2
Current Sampling (ID) Resistor

Charge

Fig 13. Resistive Switching Test Circuit & Waveforms

RL Vout Vin RG DUT 10V Vin

10%

Vout VDD
( 0.5 rated VDS )

90%

td(on) t on

tr

td(off) t off

tf

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

LL VDS
Vary tp to obtain required peak ID

BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp

ID

RG DUT 10V
tp

ID (t) VDS (t) Time

IRF630A

N-CHANNEL POWER MOSFET

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS --

IS L Driver RG VGS
Same Type as DUT

VGS

VDD

dv/dt controlled by RG IS controlled by Duty Factor D

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

Vf

VDD

Body Diode Forward Voltage Drop

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