Year

Name of the Country scientist Invention 1850 Geissler German If air is removed from a glass tube, it glows when an electric current passes through it 1878 Sir WillianmBritish Crookes Current in vaccum tubes seemed to consists of particles 1890 Perrin French Current in vaccum tubes consists of negatively charged particles. Thomson British Negatively charged particles measured 1909 Milikan American Charge of an electron 1904 Fleming Invented a vaccum Felmingtube valce used that or to diode allowed detect vaccum electric Electromagnetic tube current in waves only one direction 1907 Lee de Forest American Invented a tube triode that vaccum amplifies tubes weak used a.c. in oscillator signals called circuits triode vaccum tube 1915 Triode used in oscillator circuits and telephone instruments 1916 German Tetrode 1926 Dutch Pentode 1920 American First television picture tube called kinescope 1939 British Magnetron 1939 American Klystron microwave tubes 1943 American Travwelling wave tube(TWT) 1947 Walter Britain, Year John of Solod Bardeen, Bell state Labs William circuits Shockley start, Invention of Transistor 1951 Commercial RCA, transistors Raythesn, General Electric, Westing house , Western Electric were the firs 1958 germanium and silicon can be used to create a entire circuit called monolithic - monolithic 1959 Noyce Multiple devices in a single piece of silicon 1960 Use of vacccum tubes become obsolute replaced by BJT an FET 1961 Fairchild and Texas instuments IC's manufactured 1961 SSI-Small scale integration- no of components fabricated on a single chip less than 100 1966 MSI- No. of components fabricated on a single chip was 100-1000 1970 LSI-no of components fabricated in a single chip is between 1000-10000 1980 VLSI- no of components which can fabricate about 1 million or more components on a sing

tric current passes through it

se , Western Electric were the first to fabricate transistors. uit called monolithic - monolithic circuit was named as IC

on a single chip less than 100

een 1000-10000 on or more components on a single chip

GaAr Gallium Arsenide- used for fabrication of IC's Thyratron gas filled tube Si, Ge, GaAs follows tetrahedral or diamond lattice/Zine blends lattice Ne,He,Krypton,Argon are noble gases or inert gases since the valence shell is complete. Ionic bond is otherwise called as electrovalent bond Primary bonds are ionic bond, covalent bond and metallic bond. secondary bond are weak bonds. ionic bond readily form between alkali metals and halogen atoms ionic bod has high boiling and melting points. ionic bods are bad conductors of electricity in solid state and good conductors of electricity in molten state.

in molten state.

DMM SCR MRI SCR BCC FCC

Digital Multimeter Silicon controllede rectifier Magnetic Resonance Imaging Simple Cubic Body centred Cubic Face Centred Cubic

Crystal lattice Arranvgement of atoms in solid Non-crystalline or amorphous

1.6x10^ -19 C Electron charge 9.1x10^ -31 kg Mass of an electron 1840*9.1x10^ -31kg Mass of neutron and mass of proton 2n^ 2 no fo electrons in each shell(namely K,L,M,N) 6.626x10^ -34 Joules sec Plancks constant h 1.602 x 10^ -19 1 eV

E=hf E-energy in quanta, h-planks constant, f- frequency of raiation: h-planks ocnsta W2-W1= hf(in joules) W2- Energy of the final orbit, W1- energy in the initial orbit, h- planck's constan Wn= -21.76x10^ -19 (Z^2/n^2)(in Joules) Z-atomic number, n-orbit, w- energy possessed by an electron 1 eV= 1.602 x10^-19 En= Wn/1 eV or =(-21.76 x 10^ -19x(Z^2/n^2))/1.6 x 10^ -19 = -13.6x (z^2/n^2)(in electron volts) W0 Bond energy(kJ/mole)

uency of raiation: h-planks ocnstant= 60626x10^ -34 Js he initial orbit, h- planck's constant, f- frequency of radiation ed by an electron