FDN335N

April 1999

FDN335N
N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features
1.7 A, 20 V. RDS(ON) = 0.07 @ VGS = 4.5 V RDS(ON) = 0.100 @ VGS = 2.5 V. Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.

Applications DC/DC converter Load switch

S
SuperSOT -3
TM

G
TA = 25C unless otherwise noted

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed

Parameter

Ratings
20
(Note 1a)

Units
V V A W C

8 1.7 8 0.5 0.46 -55 to +150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Outlines and Ordering Information

Device Marking
335
1999 Fairchild Semiconductor Corporation

Device
FDN335N

Reel Size
7

Tape Width
8mm

Quantity
3000 units
FDN335N Rev. C

FDN335N

Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR

TA = 25C unless otherwise noted

Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)

Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V

Min Typ
20 14

Max

Units
V mV/C

Off Characteristics

1 100 -100

A nA nA

On Characteristics
VGS(th) VGS(th) TJ RDS(ON)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance

VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 4.5 V, ID = 1.7 A VGS = 4.5 V, ID = 1.7 A,TJ = 125C VGS = 2.5 V, ID = 1.5 A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 1.5 A

0.4

0.9 -3 0.055 0.079 0.078

1.5

V mV/C

0.070 0.120 0.100

ID(on) gFS

8 7

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

VDS = 10 V, VGS = 0 V, f = 1.0 MHz

310 80 40

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6

5 8.5 11 3

15 17 20 10 5

ns ns ns ns nC nC nC

VDS = 10 V, ID = 1.7 A, VGS = 4.5 V,

3.5 0.55 0.95

Drain-Source Diode Characteristics and Maximum Ratings

IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A
(Note 2)

0.42 0.7 1.2

A V

Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 250C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

b) 270C/W when mounted on a minimum pad.

FDN335N Rev. C

FDN335N

Typical Characteristics
10 VGS = 4.5V 3.5V 3.0V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 1 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 3.5V 4.0V 4.5V VGS = 2.0V

ID, DRAIN CURRENT (A)

6 2.0V 4

2 1.5V 0

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.24 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 1.7A VGS = 4.5V

ID = 0.85A 0.2

1.4

0.16 0.12 TA = 125oC 0.08 0.04 0 TA = 25oC

1.2

0.8

0.6 -50 -25 0 25 50 75 100

o

125

150

TJ, JUNCTION TEMPERATURE ( C)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

10 125 C ID, DRAIN CURRENT (A) 8
o

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

10 IS, REVERSE DRAIN CURRENT (A)

VDS = 5V

TA = -55oC

25oC

VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC

0.001

0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDN335N Rev. C

FDN335N

Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 1.7A 4

(continued)

500 VDS = 5V 10V CAPACITANCE (pF) 15V 400 CISS f = 1MHz VGS = 0 V

300

200

100

COSS CRSS

0 0 0.5 1 1.5 2 2.5 3 3.5 4 Qg, GATE CHARGE (nC)

0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

10 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10ms 1 100ms 1s 10s DC 1ms

20 SINGLE PULSE 16 POWER (W) RJA=270 C/W TA=25 C 12

o o

0.1

VGS = 4.5V SINGLE PULSE RJA = 270oC/W TA = 25oC

0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)

0 0.0001 0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002

D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)

R JA (t) = r(t) * RJA R JA = 270 C/W

t1

t2

TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t2

0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300

0.001 0.0001

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.

FDN335N Rev. C

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. F1