California Eastern Laboratories

AN1049

A P P L I C aT I O N N O T E

UPG2314T5N HBT PA IC for Bluetooth and ZigBee

Product Overview
The UPG2314T5N is in mass production and is our most highly recommended PA IC for ZigBee and Class 1 Bluetooth applications.

Features
Low Current Consumption 20 dB Variable Gain Control Shut Down Function Smaller & Lower Height Package

Applications
Bluetooth Class 1 ZigBee

Package Dimensions
1.5 0.40 MAX

Performance (Typical)
Frequency: 2.4 to 2.5 GHz Supply Voltage: Vcc1,2 = Vbias= Venable = 3V Output Power: +20dBm @ V= 3V, Pin=+0dBm Gain Control Range: DG=20dB Operating Current: 65 mA typ. @ Pin=+0dBm, V=3V
1.5

0.7 0.5 0.5 0.2

0.2

6 PIN TSON Package

Functional Pin Connections

(Top View)
1 2 3 6 5 4 6 5 4

(Bottom View)
1 2 3 Pin 1 2 3 4 5 6 Function OUT / VCC2 Vbias + Venable Vcont IN VCC1 GND

: Functional pin

: GND

UPG2314T5N Pin Functions and Internal Circuits

Pin No. Pin Name Applied Voltage (V) Function and Applications Supply voltage and output pin of final stage amplifier. This collector output pin should supply voltage through external inductor, optimize external LC value for matching impedance and couple with capacitor to obtain output power. GND pin of final stage amplifier. Ground pattern on board should be formed as wide as possible. Track length should be kept as short as possible to minimize ground impedance. Bias and enable pin. This pin can control the operation of bias circuit and gain control circuit. The applied voltage should be minimized to shut down the operation. Gain control pin of 1st stage amplifier. Since this device is a reverse control type, AGC control voltage should be maximized to get maximum gain. Input pin of RF signal. This port is internally coupled with capacitor for DC blocking. The impedance matching circuit is externally needed. Supply voltage pin of 1st stage amplifier. This pin should be externally equipped with bypass capacitor to minimize its impedance. GND. The ground pattern on the board should be as wide as possible, and should contain via holes to maximize thermal dissipation. Internal Equivalent Circuit

OUT/VCC2

2.7 to 3.6

GND

Vbias+Venable

0 to 3.1

Vcont

0 to 3.6

INPUT

VCC1

2.7 to 3.6

Exposed Pad

Evaluation Board
UPG2314T5N

Vcont Vbias+Venable

3.9nH IN 2.7nH 1nF 22nH

10pF

OUT

1nF

Vcc1

Vcc2

Total Parts: 6pcs

Evaluation Board Schematic

Ven+Vbias

Vcont

Vcc2

Total ; 6pcs
1nF

Pin
3.9nH 2.7nH uPG2314T5N 1nF 22nH

Pout
10pF

Vcc1

Performance Curves
Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vbias+Venable=Vcont=3.0V, with external input & output matching circuits Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vbias+Venable=3.0V, Pin=+0dBm, with external input & output matching circuits

80 70 60 50 40 30 20 10

40 35 Output Power Pout (dBm) 30

Output Power Pout (dBm), Efficiency PAE (%)

Circuit Current ICC (mA), Efficiency PAE (%)

CIRCUIT CURRENT, EFFICIENCY, OUTPUT POWER vs. INPUT POWER

ICC PAE Pout

OUTPUT POWER, EFFICIENCY, CIRCUIT CURRENT vs. CONTROL VOLTAGE

60 50 40 30 20 10 0 -10 -20 -30 0 0.5 1 1.5 2 2.5 3 90 PAE ICC Pout 80 60 50 40 30 20 10 0 3.5 Circuit Current ICC (mA) ICC (mA), nf0 [dBm] 70

25 20 15 10 5

0 -25

-20

-15

-10

-5

0 10

Input Power Pin (dBm)

Control Voltage Vcont (V)

Test Conditions : f = 2450MHz,Vcc1=Vcc2=Vcont=3.0V, Pin=+0dBm, with external input & output matching circuits

Circuit Current ICC (mA), Efficiency PAE (%)

OUTPUT POWER, 2f0, CIRCUIT CURRENT, EFFICIENCY vs. SUPPLY VOLTAGE

30 Output Power Pout (dBm) 2nd Harmonics 2f0 (dBc) 20 10 0 -10 -20 -30 -40 1.5 2 2.5 2f0 Pout PAE ICC 70 60 50 40 30 20 10 3 0 3.5

25 20 Pout [dBm] 15 10 5 0 -25

HARMONICS PERFORMANCE Pin-Pout V (all) = 3V

Pout ICC 2f0 3f0 4f0 5f0

100 ICC 60 20 2f0 5f0 -20 -60 -100 10

f= 2.45 GHz

Pout 3f0 4f0

-20

-15

-10

-5

Supply Voltage Vbias + Venable (V)

Pin [dBm]

Small Signal Characteristics

Test Conditions : Vcc1=Vcc2=Vbias+Venable=Vcont=3.0V, Pin=-20dBm, with external input & output matching circuits

S11-FREQUENCY

S11, S22-FREQUENCY

-10

m2 m3

m1

-20

-30 m1: f = 2.450 GHz S (1,1) = 0.245/-17.795 impedance = Z0 * (1.584 - j0.252) STOP 6 050.000 000 MHz

START 50.000 000 MHz

-40

m2: f = 2.450 GHz dB (S (1,1)) = -12.214 m3: f = 2.450 GHz dB (S (2,2)) = -15.929
4 5 6

Frequency f (GHz)

25 20 15 10 5 0 0

S21-FREQUENCY
m4

S22-FREQUENCY

m5

m4: f = 2.450 GHz dB (S (2,1)) = 24.321

1 2 3 4 5 6 7 START 50.000 000 MHz Frequency f (GHz)

m5: f = 2.450 GHz S (2,2) = 0.160/-152.056 impedance = Z0 * (0.745 - j0.115) STOP 6 050.000 000 MHz

California Eastern Laboratories

Exclusive Agents for NEC RF, Microwave and Optoelectronic semiconductor products in the U.S. and Canada 4590 Patrick Henry Drive, Santa Clara, CA 95054-1817 Telephone 408-919-2500 FAX 408-988-0279 Telex 34/6393 Internet: http:/www.cel.com Information and data presented here is subject to change without notice. California Eastern Laboratories assumes no responsibility for the use of any circuits described herein and makes no representations or warranties, expressed or implied, that such circuits are free from patent infingement.
California Eastern Laboratories 10/17/2006