EECS 242

Two-Port Power Gain

Prof. Niknejad University of California, Berkeley

University of California, Berkeley

EECS 242 p. 1/20

Two-Port Power and Scattering Parameters

The power owing into a two-port can be represented by

+ 2 |V1 | = (1 |in |2 ) 2Z0

Pin

The power owing to the load is likewise given by

2 | |V2 PL = (1 |L |2 ) 2Z0

+ using circuit theory We can solve for V1

+ + (1 + in ) = = V1 + V1 V1

Zin VS Zin + ZS

In terms of the input and source reection coefcient Zin = 1 + in Z0 1 in ZS = 1 + S Z0 1 S

University of California, Berkeley

EECS 242 p. 2/20

Two-Port Incident Wave

+ Solve for V1

+ (1 + in ) = V1

VS (1 + in )(1 S ) (1 + in )(1 S ) + (1 + S )(1 in )

+ = V1

VS 1 S 2 1 in S

The voltage incident on the load is given by

+ + + + S22 L V2 = S21 V1 + S22 V2 = S21 V1 V2 + S21 V1 = 1 S22 L 2

V2

+ 2 |S21 | V1 1 | |2 L PL = 2Z0 |1 S22 L |2

University of California, Berkeley

EECS 242 p. 3/20

Operating Gain and Available Power

The operating power gain can be written in terms of the two-port s-parameters and the load reection coefcient |S21 |2 (1 |L |2 ) PL = Gp = Pin |1 S22 L |2 (1 |in |2 )

+ The available power can be similarly derived from V1

Pavs = Pin |in = =

S

+ 2 V1a 2Z0

2 (1 | S| )

+ V1 a

+ V1

in = S

VS 1 S = 2 1 |S |2

Pavs

|VS |2 |1 S |2 = 8Z0 1 |S |2

University of California, Berkeley

EECS 242 p. 4/20

Transducer Gain

The transducer gain can be easily derived PL |S21 |2 (1 |L |2 )(1 |S |2 ) = = Pavs |1 in S |2 |1 S22 L |2

GT

Note that as expected, GT is a function of the two-port s-parameters and the load and source impedance. If the two port is connected to a source and load with impedance Z0 , then we have L = S = 0 and GT = |S21 |2

University of California, Berkeley

EECS 242 p. 5/20

Unilateral Gain

Z0 + vs M1 S11 S21 0 S22

2

M2

Z0

GS

|S21 |

GL

If S12 0, we can simplify the expression by just assuming S12 = 0. This is the unilateral assumption 1 |S |2
2

GT U =

|1 S11 S |

|S21 |

|1 S22 L |

1 |L |2

= GS |S21 |2 GL

The gain partitions into three terms, which can be interpreted as the gain from the source matching network, the gain of the two port, and the gain of the load. In reality the source/load matching network are passive and hopefully lossless, so the power gain is 1 or less, but by virtue of the matching network we can change the gain of the two-port.
University of California, Berkeley EECS 242 p. 6/20

Maximum Unilateral Gain

We know that the maximum gain occurs for the biconjugate match
S = S11 L = S22

GS,max =

1 1 |S11 |2 1 1 |S22 |2 |S21 |2

GL,max =

GT U,max =

(1 |S11 |2 )(1 |S22 |2 )

Note that if |S11 | = 1 of |S22 | = 1, the maximum gain is innity. This is the unstable case since |Sii | > 1 is potentially unstable.

University of California, Berkeley

EECS 242 p. 7/20

Ideal MOSFET

Cgs

+ vin

gm vin

ro

Cds

The AC equivalent circuit for a MOSFET at low to moderate frequencies is shown above. Since |S11 | = 1, this circuit has innite power gain. This is a trivial fact since the gate capacitance cannot dissipate power whereas the output can deliver real power to the load.

University of California, Berkeley

EECS 242 p. 8/20

Real MOSFET
Ri + vs Ri + vin

Cgs

gm vin

R ds

Cds

R ds

A more realistic equivalent circuit is shown above. If we make the unilateral assumption, then the input and output power can be easily calculated. Assume we conjugate match the input/output |VS |2 = 8Ri
1 2

Pavs

1 )= IL VL PL = ( 2

GT U,max

2 V 1 2 = gm Rds Ri VS

gm V1 2 2 Rds

University of California, Berkeley

EECS 242 p. 9/20

Real MOSFET (cont)

At the center resonant frequency, the voltage at the input of the FET is given by V1 = 1 VS jCgs 2Ri

GT U,max

Rds (gm /Cgs )2 = Ri 4 2

This can be written in terms of the device unity gain frequency fT GT U,max 1 Rds = 4 Ri fT f 2

The above expression is very insightful. To maximum power gain we should maximize the device fT and minimize the input resistance while maximizing the output resistance.

University of California, Berkeley

EECS 242 p. 10/20

Design for Gain

So far we have only discussed power gain using bi-conjugate matching. This is possible when the device is unconditionally stable. In many case, though, wed like to design with a potentially unstable device. Moreover, we would like to introduce more exibility in the design. We can trade off gain for

bandwidth noise gain atness linearity etc.

We can make this tradeoff by identifying a range of source/load impedances that can realize a given value of power gain. While maximum gain is acheived for a single point on the Smith Chart, we will nd that a lot more exibility if we back-off from the peak gain.

University of California, Berkeley

EECS 242 p. 11/20

Unilateral Design

No real transistor is unilateral. But most are predominantly unilateral, or else we use cascades of devices (such as the cascode) to realize such a device. The unilateral gure of merit can be used to test the validity of the unilateral assumption Um = |S12 |2 |S21 |2 |S11 |2 |S22 |2 (1 |S11 |2 )(1 |S22 |2 )

It can be shown that the transducer gain satises the following inequality GT 1 1 < < (1 + U )2 GT U (1 U )2

Where the actual power gain GT is compared to the power gain under the unilateral assumption GT U . If the inequality is tight, say on the order of 0.1 dB, then the amplier can be assumed to be unilateral with negligible error.

University of California, Berkeley

EECS 242 p. 12/20

Gain Circles

We now can plot gain circles for the source and load. Let gS = GS GS,max GL GL,max

gL =

By denition, 0 gS 1 and 0 gL 1. One can show that a xed value of gS represents a circle on the S plane 2 1 gS (1 |S11 | ) S11 gS S = |S11 |2 (gS 1) + 1 |S11 |2 (gS 1) + 1

More simply, |S CS | = RS . A similar equation can be derived for the load. corresponding to the maximum gain. Note that for gS = 1, RS = 0, and CS = S11

University of California, Berkeley

EECS 242 p. 13/20

Gain Circles (cont)

0.11
0.12 0.38 0.13 0.37

0.14 0.36

0.1
0 .09 0.4 1
55

0.39
50

0.15 0.35
0.1 0.3 4 6

0.4

45

0.9

1.0

1.2

40

1.4

8 0.0 0.4
0.0 7 3

0.8

0.7

2
0.6 60
o) jB/Y E (+

35

0.1 0.3 3

7
0.1 0.3 2

1.6

30
1.8
2.0

65

0.4

0.0 6

0.4 4

70

0.0

OM PO NE NT (+ jX /Z o

A RC ), O

C PA

VE ITI

E SC SU

C AN PT

0.2

0.5

9 0.1

25
0.4

1 0.3

0.4

75

0.0 4

0.4 6

CT AN C

EC

80

>

REA

> WAVEL ENGTH S T OW AR D 0.49 GEN ERA 0.48 TOR

IND UCT IV E

0.47

85

1.0

90

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10

20

50

0.0

0.0

RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)

LOAD <

0.2

0.49

WARD

0.1

TO GTHS ELEN WAV < -90

0.48

0.6

-85

1.0

0.2

jB/Y

o)

(CE AN PT

0.47

-80

C US ES TIV UC ND I R ), O

4 0.0

6 0.4

0.3

-75

5 0.4

o /Z jX

0.0

6 0.0

-70

4 0.4

0.5

-65

2.0

1.8

0.6

-60

1.6

0.7

1.4

0.8

0.9

1.0

1.2

-55

-5

5 -4

. We can select any desired All gain circles lie on the line given by the angle of Sii value of source/load reection coefcient to acheive the desired gain. To minimize the impedance mismatch, and thus maximize the bandwidth, we should select a point closest to the origin.
University of California, Berkeley EECS 242 p. 14/20

0.3

0.1

-25

3 0.3

0.1

-30

0.3

0.1

-35

0.35

0.15

0.36

0.14

-4

0.37

0.13

0.4

0.2

0.12

0.38

0.11

0.39

0.1

0.4

CAP AC

ITIV

0.0

0.4

RE AC TA NC EC O M PO NE NT (

.08

0.4

0.4

-15

4.0

gS = 3 dB
0.8

-10

gS = 2 dB

0.8

10

gS = 1 dB

0.4

50

20

5.0

-20

3.0

1.0

0.6

0.2

S11

0.8

0.6

0.4

0.0

0.4

0.4

0.2

20

0.3

0.6

3.0
1 0.2 9 0.2

0.3

0.8

4.0

15
0.22

gS = 0 dB

1.0

0.28

5.0
10

0.2

0.23

0.27
OF ANGLE

10 0.1

20

50

0.25 0.24 0.26 C OF REFLECTION OEFFICIENT IN DEGREES ANGLE TRANSMISSION COEFFICIENT IN DEGRE ES
0.23 0.27

0.24

0.25
0.26

0.22
0.2 1 0.2 9

0.28

0.2 0.3

0.1 9 0.3 1

Extended Smith Chart

For || > 1, we can still employ the Smith Chart if we make the following mapping. The reection coefcient for a negative resistance is given by (R + jX ) = (R + Z0 ) jX R + jX Z0 = R + jX + Z0 (R Z0 ) jX

1 (R Z0 ) + jX = (R + Z0 ) + jX

We see that can be mapped to the unit circle by taking 1/ and reading the resistance value (and noting that its actually negative).

University of California, Berkeley

EECS 242 p. 15/20

Potentially Unstable Unilateral Amplier

For a unilateral two-port with |S11 | > 1, we note that the input impedance has a negative real part. Thus we can still design a stable amplier as long as the source resistance is larger than (Zin ) (ZS ) > |(Zin )|

The same is true of the load impedance if |S22 | > 1. Thus the design procedure is identical to before as long as we avoid source or load reection coefcients with real part less than the critical value.

University of California, Berkeley

EECS 242 p. 16/20

Pot. Unstable Unilateral Amp Example

Consider a transistor with the following S -Parameters S11 = 2.02 130.4 S22 = 0.50 70
0.11

S12 = 0 S21 = 5.0060

0.12 0.38

0.13
0.37

0.14 0.36

0.1

0.39

0.15

50

45

0
0.0 8

.09 0.4 1

0.4

0.35
1.0
0.9

0.1 0.3 4

6
0.1 0.3 3 7

0.8

1.2

40

55

0.6 60

2 0.4

0.7

1.4

35
1.6

0.0

7 0.4 3

0.0

REA 75 CT AN CE CO MP ON EN T( +j X/ Zo

R ), O

o) jB/Y E (+ NC TA EP SC U ES TIV CI PA CA
65
0.5

30
1.8

0.1 0.3
2.0

0.2

2
9 0.1

0.0 6

0.4 4

25
0.4

1 0.3

0.4 6

s
RS CS

0.0 4

le tab

region
0.6

0.4

20
3.0

1 0.2 9 0.2

> WAVEL ENGTH S TOW ARD 0.49 GEN ERA 0.48 TOR

GS = 5 dB
1.0 1.0

80

0.8

>

4.0

15
0.22

5.0
10

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.2

1.4

1.6

1.8

2.0

3.0

4.0

5.0

10

20

50

0.0

0.0

RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)

0.48 < RD LOAD TOWA GTHS ELEN WAV < -90

0.2

0.49

0.1

0.4
10

1.0

0.2

o) jB/Y E (NC TA EP SC SU

-85

0.47

-80

4 0.0

6 0.4

0.3

IVE CT DU IN

-75

R ,O o) /Z jX

5 0.4

0.0

-70

6 0.0

4 0.4

0.5

-65

2.0

1.8

0.6

-60

1.6

0.7

1.4

0.8

0.9

1.0

1.2

-55

0 -5

-4

University of California, Berkeley

0.3

0.1

-25

3 0.3

0.1

-30

0.3

0.1

-35

0.35

0.15

0.36

0.14

-4

0.37

0.13

0.4

0.2

0.12

0.38

0.11

0.39

0.1

0.4

CAP AC ITIV E

0.0

0.4

RE AC TA NC E CO M PO NE NT (-

0.4

-10

5.0

1 S11

0.6

0.8

50

20

-15

4.0

-20

3.0

1.0

0.8

0.6

0.4

S
0.2

10

20

50

Since |S11 | > 1, the amplier is potentially unstable. We to nd begin by plotting 1/S11 the negative real input resistance. Now any source inside this circle is stable, since (ZS ) > (Zin ). We also draw the source gain circle for GS = 5 dB.

IND UCT IVE

0.47

85

90

0.8

0.6

0.0

0.4 2

0.0

0.4

0.4

70

0.2 0.3

0.3

0.28

0.2

0.23

0.27

0.25 0.24 0.26 CO OF REFLECTION EFFICIENT IN DEGREES ANGLE ISSION COEFFICIENT IN D EGREES OF TRANSM ANGLE

0.1

0.24
0.25

0.26

0.23

0.27

0.22
0.2 1 0.2 9

0.28

0.2 0.3

0.1 9 0.3 1

EECS 242 p. 17/20

Amp Example (cont)

. Note the real part is The input impedance is read off the Smith Chart from 1/S11 interpreted as negative Zin = 50(0.4 0.4j )

The GS = 5 dB gain circle is calculated as follows gS = 3.15(1 |S11 |2 ) RS = 1 gS (1 |S11 |2 )

2 gS S11

1 |S11 | (1 gS )

= 0.236

CS =

1 |S11 |2 (1 gS )

= .3 + 0.35j

We can select any point on this circle and obtain a stable gain of 5 dB. In particular, we can pick a point near the origin (to maximize the BW) but with as large of a real impedance as possible: ZS = 50(0.75 + 0.4j )

University of California, Berkeley

EECS 242 p. 18/20

Bilateral Amp Design

In the bilateral case, we will work with the power gain Gp . The transducer gain is not used since the source impedance is a function of the load impedaance. Gp , on the other hand, is only a function of the load. |S21 |2 (1 |L |2 ) Gp = = |S21 |2 gp 2 11 L 2 1 S | 1 S | 22 L 1S
22 L

It can be shown that gp is a circle on the L plane. The radius and center are given by q 2 1 2K |S12 S21 |gp + |S12 S21 |2 gp RL = 2 2 2 1 |S22 | gp + || gp CL = 1 + gp (|S22 |2 ||2 )
S ) gp (S22 11

University of California, Berkeley

EECS 242 p. 19/20

Bilateral Amp (cont)

We can also use this formula to nd the maximum gain. We know that this occurs when RL = 0, or
2 =0 1 2K |S12 S21 |gp,max + |S12 S21 |2 gp,max

The design procedure is as follows 1. Specify gp 2. Draw operating gain circle. 3. Draw load stability circle. Select L that is in the stable region and not too close to the stability circle. 4. Draw source stability circle. 5. To maximize gain, calculate in and check to see if S = in is in the stable region. If not, iterate on L or compromise.

p 1 gp,max = K K2 1 |S12 S21 | p S21 2 K K 1 Gp,max = S12

University of California, Berkeley

EECS 242 p. 20/20