DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3326
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3326 PACKAGE Isolated TO-220

DESCRIPTION
The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES
Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) Gate voltage rating : 30 V Low on-state resistance : RDS(on) = 0.85 MAX. (VGS = 10 V, ID = 5.0 A) Avalanche capability ratings Isolated TO-220(MP-45F) package

(Isolated TO-220)

ABSOLUTE MAXIMUM RATINGS (TA = 25C)

Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1

VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg

500 30 10 40 40 2.0 150 55 to +150 10 10.7

V V A A W W C C A mJ

Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2

IAS EAS

Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14204EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan

2000

2SK3326
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V, di/dt = 50 A / s VDD = 400 V, VGS = 10 V, ID = 10 A VDD = 150 V, ID = 5.0 A, VGS(on) = 10 V, RG = 10 , RL = 60 TEST CONDITIONS VDS = 500 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz 2.5 2.0 4.0 0.68 1200 190 10 21 11 40 9.5 22 6.5 7.5 1.0 0.5 2.6 0.85 MIN. TYP. MAX. 100 100 3.5 UNIT

A
nA V S pF pF pF ns ns ns ns nC nC nC V

s C

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T. RG = 25 PG. VGS = 20 0 V 50

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

L VDD PG. RG

VGS RL VDD ID
90 % 90 % ID

VGS
Wave Form

10 %

VGS(on)

90 %

BVDSS IAS ID VDD VDS

VGS 0 = 1 s Duty Cycle 1 %

ID
Wave Form

10 % td(on) ton tr td(off) toff

10 % tf

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T. IG = 2 mA PG. 50

RL VDD

Data Sheet D14204EJ1V0DS00

2SK3326
TYPICAL CHARACTERISTICS(TA = 25 C)
Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100
dT - Percentage of Rated Power - %
50 Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

PT - Total Power Dissipation - W

80

40

60 40

30

20

20

10

20

40

60

80

100 120

140

160

20

40

60

80

100 120

140

160

Tc - Case Temperature - C
Figure3. FORWARD BIAS SAFE OPERATING AREA 100
d ite ) im 0 V )L 1 on = ( S S RD t VG (a

Tc - Case Temperature - C

Figure4. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 20 Pulsed

ID (pulse) P
10

ID - Drain Current - A

10

10

ID (DC)

1m
Po
10

ID - Drain Current - A

VGS = 20 V 10 V 8.0 V 10

we

rD

10
iss

ip

s
n Li m

at

io

VGS = 6.0 V

0.1 1

Tc = 25 C Single Pulse 10

ite

100

1000

VDS - Drain to Source Voltage - V

Figure5. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 100 10 Pulsed

12

16

VDS - Drain to Source Voltage - V

ID - Drain Current - A

1 0.1 0.01 TA = 25 C 25 C 75 C 125 C

0.001 0.0001 0 5 10 15 VGS - Gate to Source Voltage - V

Data Sheet D14204EJ1V0DS00

2SK3326

Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth (t) - Transient Thermal Resistance - C/W

100 Rth(ch-A) = 62.5 C/W

10 Rth(ch-C) = 3.2 C/W

0.1 Tc = 25 C Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000

PW - Pulse Width - s
Figure7. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 2.0

IyfsI - Forward Transfer Admittance - S

10

1 TA = 25 C 25 C 75 C 125 C 0.1

RDS(on) - Drain to Source On-state Resistance -

1.0

ID = 10 A 5.0 A 2.0 A

0.01 0.01

VDS = 10 V Pulsed 0.1 1 ID - Drain Current - A 10 100

0.0

Pulsed 0 5 10 15 20 25 VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance -

Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

VGS(off) - Gate to Source Cut-off Voltage - V

Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = 10 V ID = 1 mA 3.0

3.0

Pulsed

2.0

2.0

1.0

1.0

0 0.1

0.0
50 0 50 100 150 200

10

100

ID - Drain Current - A

Tch - Channel Temperature - C

Data Sheet D14204EJ1V0DS00

2SK3326

RDS(on) - Drain to Source On-state Resistance -

Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 3.0

Figure12. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100

ISD - Diode Forward Current - A

Pulsed

10

2.0 ID = 10 A

VGS = 10 V VGS = 0 V

1.0

ID = 5.0 A

0.1

0.0 50

VGS = 10 V 0 50 100 150 Tch - Channel Temperature - C

0.01 0.0

0.5

1.0

1.5

VSD - Source to Drain Voltage - V

Figure14. SWITCHING CHARACTERISTICS 1000

Figure13. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1.0 MHz

td(on), tr, td(off), tf - Switching Time - ns

10000
Ciss, Coss, Crss - Capacitance - pF

tr tf

Ciss 1000 Coss 100

100 td(on) td(off) 10 VDD = 150 V VGS = 10 V RG = 10 0.1 1 10 ID - Drain Current - A 100

10 Crss 1

0.1 1 10 100 1000 VDS - Drain to Source Voltage - V

Figure15. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 900

Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800

VDS - Drain to Source Voltage - V

trr - Reverse Recovery Time - ns

di/dt = 50 A/s VGS = 0 V

700 600 500 400 300 200 100 0 5 VDS VDD = 400 V 250 V 100 V

14 12 VGS 10 8 6 4 2 15 20 0 25

800 700 600 500 400 300 200 100 0 0.1 1 10 100 IF - Drain Current - A

10

QG - Gate Charge - nC

Data Sheet D14204EJ1V0DS00

VGS - Gate to Source Voltage - V

ID = 10 A

2SK3326

Figure17. SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE 16 ID(peak) = IAS RG = 25 VGS = 20 V 0 V VDD = 150 V EAS = 10.7 mJ 10 8 6 4 2 0 25 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - C

Figure18. SINGLE AVALANCHE ENERGY vs INDUCTIVE LOAD 100

IAS - Single Avalanche Energy - A

EAS - Single Avalanche Energy - mJ

14 12

RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25 C IAS = 10 A

EAS = 10

10

.7 m

0.1 10

100

1m

10 m

L - Inductive Load - H

Data Sheet D14204EJ1V0DS00

2SK3326
PACKAGE DRAWING (Unit: mm)
Isolated TO-220(MP-45F)
10.00.3 4.50.2 3.20.2 2.70.2

15.00.3

30.1

12.00.2

EQUIVALENT CIRCUIT
Drain

40.2

13.5 MIN.

Gate

Body Diode

0.70.1 2.54

1.30.2 1.50.2 2.54

2.50.1 0.650.1
Source

1. Gate 2. Drain 3. Source 1 2 3

Remark

Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

Data Sheet D14204EJ1V0DS00

2SK3326

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M7 98. 8

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