APM4305K

P-Channel Enhancement Mode MOSFET

Features

-30V/-11A, RDS(ON)= 11m (typ.) @ VGS=-10V RDS(ON)= 20m (typ.) @ VGS=-5V

Pin Description
D D D

Super High Dense Cell Design Reliable and Rugged SOP-8 Package Lead Free and Green Devices Available (RoHS Compliant)

S S

S G

Top View of SOP8

( 1, 2, 3 ) S S S

Applications

Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems
D D DD (5,6,7,8) (4) G

P-Channel MOSFET

Ordering and Marking Information

APM4305 Assembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device XXXXX - Date Code

APM4305 K :

APM4305 XXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009 1 www.anpec.com.tw

APM4305K
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Thermal Resistance-Junction to Ambient
2

(TA = 25C unless otherwise noted)

Rating -30 25 VGS=-10V -11 -40 -2.7 150 -55 to 150 TA=25C TA=100C 2 0.8 62.5 W C/W A C V A Unit

Parameter

Note : *Surface Mounted on 1in pad area, t 10sec.

Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) VSD Qg Qgs Qgd
a a

(TA = 25C unless otherwise noted) APM4305K Min. -30 -1 VDS=-15V, VGS=-10V, IDS=-11A Typ. -2 11 20 -0.75 35 4.7 9.3 Max. -1 -30 -2.5 100 14 30 -1.1 50 nC

Parameter

Test Conditions

Unit

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
b

VGS=0V, IDS=-250A VDS=-24V, VGS=0V TJ=85C VDS=VGS, IDS=-250A VGS=25V, VDS=0V VGS=-10V, IDS=-11A VGS=-5V, IDS=-6A ISD=-2.7A, VGS=0V

V A V nA m V

Gate Charge Characteristics Total Gate Charge

Gate-Source Charge Gate-Drain Charge

Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009

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APM4305K
Electrical Characteristics (Cont.)
Symbol Parameter
b

(TA = 25C unless otherwise noted)

Test Conditions

APM4305K Min. Typ. 5 2070 320 250 13 13 59 29 20 11 Max. 24 24 107 53 -

Unit

Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf

trr
b b

Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Reverse Recovery Time Reverse Recovery Charge

VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-15V, RL=15, IDS=-1A, VGEN=-10V, RG=6 ISD=-11A,dlSD/dt=100A/s

pF

ns

ns nC

qrr

Note a : Pulse test ; pulse width300s, duty cycle2%. Note b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009

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APM4305K
Typical Operating Characteristics
Power Dissipation
2.5
12

Drain Current

2.0

10

-ID - Drain Current (A)

Ptot - Power (W)

1.5

1.0

0.5
o

0.0

TA=25 C 0 20 40 60 80 100 120 140 160

TA=25 C,VG=-10V 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area Normalized Transient Thermal Resistance

100

Thermal Transient Impedance

2 1
0.2 0.1 Duty = 0.5

-ID - Drain Current (A)

10

Rd s(o n) Lim it

300s 1ms

0.1

0.05 0.02 0.01

10ms 100ms

0.1

1s DC

0.01
Single Pulse

0.01 0.01

TA=25 C 0.1 1 10 100

1E-3 1E-4

Mounted on 1in pad o RJA : 62.5 C/W

1E-3

0.01

0.1

10 30

-VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009

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APM4305K
Typical Operating Characteristics (Cont.)
Output Characteristics
40 VGS= -4.5,-5,-6,-7,-8,-9,-10V 35 30 -4V

Drain-Source On Resistance
40 35

RDS(ON) - On - Resistance (m)

30 25 20 15 10 5 0 VGS=-5V

-ID - Drain Current (A)

25 20 15 10 5 0 0.0

-3.5V

VGS=-10V

-3V 0.5 1.0 1.5 2.0 2.5 3.0

10

15

20

25

30

35

40

-VDS - Drain - Source Voltage (V)

-ID - Drain Current (A)

Gate-Source On Resistance
50 45 ID=-11A
1.4 1.6

Gate Threshold Voltage

IDS =-250A

RDS(ON) - On - Resistance (m)

Normalized Threshold Voltage

40 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10

1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25

25

50

75

100 125 150

-VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009

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APM4305K
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.00 VGS = -10V 1.75 IDS = -11A

Source-Drain Diode Forward

40

Normalized On Resistance

1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 -25 RON@Tj=25 C: 11m 0 25 50 75 100 125 150
o

10

-IS - Source Current (A)

Tj=150 C

Tj=25 C 1

0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (C)

-VSD - Source - Drain Voltage (V)

Capacitance
3000 2700 2400 Frequency=1MHz

Gate Charge
10 9 VDS= -15V ID= -11A

-VGS - Gate - source Voltage (V)

30

8 7 6 5 4 3 2 1

C - Capacitance (pF)

2100 1800 1500 1200 900 600 Coss 300 0 Crss 0 5 10 15 20

Ciss

25

0 0

10

15

20

25

30

35

-VDS - Drain - Source Voltage (V)

QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009

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APM4305K
Package Information
SOP-8
D SEE VIEW A

E1

h X 45

A2

0.25 GAUGE PLANE SEATING PLANE L VIEW A SOP-8 INCHES MIN. MAX.

S Y M B O L

MILLIMETERS MIN. MAX.

A A1 A2 b c D E E1 e h L 0
0.25 0.40 0 0.10 1.25 0.31 0.17 4.80 5.80 3.80 1.27 BSC

A1

1.75 0.25 0.004 0.049 0.51 0.25 5.00 6.20 4.00 0.012 0.007 0.189 0.228 0.150 0.050 BSC 0.50 1.27 8 0.010 0.016 0

0.069 0.010

0.020 0.010 0.197 0.244 0.157

0.020 0.050 8

Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009 7 www.anpec.com.tw

APM4305K
Carrier Tape & Reel Dimensions
OD0 P0 P2 P1 A E1 F K0 B SECTION A-A T B0 A0 OD1 B A SECTION B-B

Application

SOP-8

A 330.0 2.00 P0 4.0 0.10

T1 C d D W E1 F 12.4+2.00 13.0+0.50 0.30 1.75 0.10 5.5 0.05 50 MIN. 1.5 MIN. 20.2 MIN. 12.0 -0.00 -0.20 P1 P2 D0 D1 T A0 B0 K0 1.5+0.10 0.6+0.00 8.0 0.10 2.0 0.05 6.40 0.20 5.20 0.20 2.10 0.20 1.5 MIN. -0.00 -0.40 (mm)

Devices Per Unit

Package Type SOP-8 Unit Tape & Reel Quantity 2500

Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009

H A

T1

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APM4305K
Taping Direction Information
SOP-8

USER DIRECTION OF FEED

Reflow Condition
TP

(IR/Convection or VPR Reflow)

tp Ramp-up Critical Zone TL to TP

Temperature

TL Tsmax

tL

Tsmin Ramp-down ts Preheat

25

t 25 C to Peak

Time

Reliability Test Program

Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD-883D-1005.7 JESD-22-B, A102 MIL-STD-883D-1011.9 Description 245C, 5 sec 1000 Hrs Bias @125C 168 Hrs, 100%RH, 121C -65C~150C, 200 Cycles
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Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009

APM4305K
Classification Reflow Profiles
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classification Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds

6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Note: All temperatures refer to topside of the package. Measured on the body surface. Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness <2.5 mm 2.5 mm Package Thickness Volume mm <350
3

Volume mm <350

Volume mm 350

240 +0/-5C 225 +0/-5C Volume mm 350-2000

3

225 +0/-5C 225 +0/-5C Volume mm >2000

3

Table 2. Pb-free Process Package Classification Reflow Temperatures

<1.6 mm 260 +0C* 260 +0C* 260 +0C* 1.6 mm 2.5 mm 260 +0C* 250 +0C* 245 +0C* 2.5 mm 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL level.

Customer Service
Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-2910-3838 Fax : 886-2-2917-3838
Copyright ANPEC Electronics Corp. Rev. A.2 - Jan., 2009 10 www.anpec.com.tw