IRF610

Data Sheet June 1999 File Number

1576.3

3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17442.

Features
3.3A, 200V rDS(ON) = 1.500 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER IRF610 PACKAGE TO-220AB BRAND IRF610

Symbol
D

NOTE: When ordering, use the entire part number.

Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRF610
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF610 200 200 3.3 2.1 8 20 43 0.34 46 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 125oC.

Electrical Specications
PARAMETER

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab to Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Modified MOSFET Symbol Showing the Internal Device Inductances
D LD

TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VDS = VGS, ID = 250A VDS = Max Rating, VGS = 0V VDS = Max Rating x 0.8, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) VGS = 20V VGS = 10V, ID = 1.6A (Figures 8, 9) VDS 50V, ID = 1.6A (Figure 12) VDD = 100V, ID 3.3A, RG = 24, RL = 30 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1MHz (Figure 11)

MIN 200 2 3.3 0.8 -

TYP 1.0 1.3 8 17 13 9 5.3 1.2 3.0 135 60 16 3.5

MAX 4 25 250 100 1.5 12 26 21 13 8.2 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

4.5

nH

Internal Source Inductance

LS

Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad

G LS S

7.5

nH

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient

RJC RJA Free Air Operation

2.9 80

oC/W oC/W

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IRF610
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier
G D

MIN -

TYP -

MAX 3.3 8

UNITS A A

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = 3.3A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s

75 0.33

160 0.9

2.0 310 1.4

V ns C

2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 6.4mH, RG = 25, peak IAS = 3.3A.

Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0

Unless Otherwise Specied

5.0

0.8 0.6 0.4 0.2 0

ID, DRAIN CURRENT (A)

4.0

3.0

2.0

1.0

50

100

150

0 25

50

75

100

125

150

TC, CASE TEMPERATURE (oC)

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

10 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W)

0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE PDM

0.01 10-5

NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 0.1 1 10

t1 t2

t1, RECTANGULAR PULSE DURATION (S)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

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IRF610 Typical Performance Curves

100 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10

Unless Otherwise Specied (Continued)

5

TJ = 150oC SINGLE PULSE TC = 25oC 10s 100s 1ms ID, DRAIN CURRENT (A)

VGS = 10V VGS = 8V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 7V

2 VGS = 6V 1 VGS = 5V 0 VGS = 4V 80

1 10ms DC

0.1 1 100 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000

20

40

60

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V ID, DRAIN CURRENT (A)

10

ID, DRAIN CURRENT (A)

4 VGS = 8V VGS = 7V 2 VGS = 6V 1 VGS = 4V 0 0 2 4 6 8 10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V

0.1

TJ = 150oC TJ = 25oC

10-2 0

2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)

10

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

15 rDS(ON), ON STATE RESISTANCE ()

NORMALIZED DRAIN TO SOURCE ON RESISTANCE

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

3.0

12

2.4

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 3.2A

1.8

6 VGS = 10V 3 VGS = 20V

1.2

0.6

0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10

-60

-40

-20

20

40

60

80 100

120 140 160

TJ, JUNCTION TEMPERATURE (oC)

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

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IRF610 Typical Performance Curves

1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A

Unless Otherwise Specied (Continued)

400 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD

1.15 C, CAPACITANCE (pF)

320

1.05

240

0.95

160 COSS 80 CRSS

CISS

0.85

0.75 -60

-40

-20

20

40

60

80

100 120 140 160

TJ, JUNCTION TEMPERATURE (oC)

5 10 2 5 VDS, DRAIN TO SOURCE VOLTAGE (V)

102

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

1.5 gfs, TRANSCONDUCTANCE (S)

ISD, SOURCE TO DRAIN CURRENT (A)

1.2

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V

100

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

TJ = 25oC

0.9

TJ = 150oC

TJ = 150oC 10

TJ = 25oC

0.6

0.3

1 0 1 2 3 ID, DRAIN CURRENT (A) 4 5 0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20 VGS, GATE TO SOURCE VOLTAGE (V)

ID = 3.2A VDS = 100V

16

12

VDS = 40V

VDS = 160V

0 0 2 4 6 8 10 Qg, GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

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IRF610 Test Circuits and Waveforms

VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD

0V

IAS 0.01

0 tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tr RL VDS

+

tOFF td(OFF) tf 90%

90%

RG DUT

VDD 0

10% 90%

10%

VGS VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

VDS (ISOLATED SUPPLY)

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS

12V BATTERY

0.2F

50k

0.3F

DUT 0

Ig(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0

FIGURE 19. GATE CHARGE TEST CIRCUIT

FIGURE 20. GATE CHARGE WAVEFORMS

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IRF610

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