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Plasma Process
Boonchoat Paosawatyanyong
Plasma and Advanced Material Technology Research Unit (PAMT),
Faculty of Science, Chulalongkorn University, Thailand
Plasma Nitriding
Plasma Carburizing
Plasma Etching/Cleaning
HP 4284A
L CUR L POT HPOT HCU R
depletion Rd
layer Cd Rd
Cf
A l , T i /A u e l ec tr od e
P ro b e DL C
bulk DL C Rf
S i su b strate CB RB
RB
P ro b e
Si substrate
q u artz p l ate
Geometrical model
tem p eratu re- c o ntro l l ed c hu c k
-6 7
10 10
Bias Voltage
Voltag
-7 - 5.0 V
10 - 2.5 V
0V 5
+ 2.5 V 10
Cs (Farad)
-8
10 + 5.0 V
Rs ()
Bias Voltage
-9
10 3 -5.0 V
10 - 2.5 V
0V
-10 + 2.5 V
10
+ 5.0 V
-11 1
10 2 3 4 5 6
10 2 3 4 5 6
10 10 10 10 10 10 10 10 10 10
250
(200)
Intensity (a.u.)
200
150
100
114 W
50 97 W
81 W
0 67 W
56 W
40
42
44
46
44 W
48
50
52
54
56
58
2
60
62
Polyacetylene
Polypyrrole
Polythiophene
In-situ doping
Device fabrication
RC RC
Lowpass Lowpass Oscilloscope
3MHz Funtion 300V, 1 A Filter Filter
Generator Power Supply Diffrential Voltage
Probe Probe
83k 4k
10m
Lanmuir Probe
2N5657
47m
500
10k 36k 1k
in out
235 470m
0.3n
SF6 O2 , N2
polymer
250
absorption time (min)
200
untreated
150
25 watts
100 50 watts
75 watts
50
0
0 10 20 30
Number of cycle (round)
700
700
650
Warp
600 warp 600 Weft
weft
550
500
500
Tensile strength (N)
300 400
350
200
300
100 250
200
0
150
0 5 10 15 20 25 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6
Exposure time (min) Pressure (torr)
6 1.2
5 1.0
4 0.8
3
0.6
2
0.4
1
0.2
0
0.0
0 5 10 15 20 25 30 0.0 0.1 0.2 0.3 0.4 0.5 0.6
Treatment time (min) Pressure(torr)
A B C
D E F
5mm
5mm
5mm
A B
D
C