S.R.

Mohanty
Centre of Plasma Physics, Assam

•Work carried out at Hotta Lab., Tokyo Institute of Technology, Yokohama

under EUVA project of Japan
1
 Presentation Outline

1. EUV radiation
2. Lithography
3. Discharge Produced Plasma (DPP) EUV Sources
4. EUV diagnostics developed for DPP Sources
5. Capillary plasma

2
 EUV Radiation
Extreme Ultra Violet

Space Science
EUV radiation Plasma Science
Electronics industry
EUV radiation in Space Science
• for studying specific groups of astronomical objects, including
white dwarf stars, stellar coronae and interstellar medium.
• for studying the temperature and density structure of the solar
corona, the solar flares and other coronal disturbances.
• for studying the invisible universe. 3
 EUV Radiation

EUV radiation in Plasma Physics

Tokamak researchers use EUV radiation emitted by highly ionized impurity ions
to diagnose transport and other physical properties…

Example lines:
Li-II 13.5 nm
C-V 24.8 nm
He-II 30.4 nm

EUV radiation of Laser Produced Plasma and Discharge Produced Plasma

are being studied for different application purposes.

EUV radiation in Semiconductor Industries

EUV radiation is of significant interest for the Semiconductor Industries

EUV Lithography is well on its way to commercialization 4

 Lithography

What’s Lithography ?
• A method to print text or figure on a plain surface (paper or other materials)

Semiconductor Industries imitated the lithography process to fabricate

ICs only in 1960….

IC (1962)
Current generation IC
Basic steps for IC fabrication
• Wafer preparation – How does optical lithography work ?
Oxidation, Cleaning
• Wafer fabrication - Light source

Optical lithography and Etching Lenses

Mask (Circuit pattern)
Diffusion and Ion Implantation
Metallization Lenses
• Die testing and cutting
• IC packaging and testing 5
Si Wafer coated with photoresist
 Lithography

Fundamental Relations
k2 ±
k1 Depth of Focus =
Re solution  (NA)2
NA
k1 & k2 : application dependent coefficients (a constant between 0.25 to 1 depending upon optics, resist etc)
 : wavelength of the radiation used for imaging
NA : numerical aperture of the imaging system

Optical Lithography
Road Map

6
 Lithography

Why EUV lithography???

Semiconductor industry wants to produce smaller circuits
30 nm structures are needed around 2014
Not possible with “current” optical lithography
EUV lithography (13.5 nm or 92 eV) is the solution

The light source is one of the main problems!!!

Mo/Si multilayer mirror with high
reflectivity at around 13.5 nm
Mo/Si ML

7
 Lithography

EUV Lithography System

Discharge Produced Plasma
(DPP) Light Source

kV kHz
Intermediate
Focal Point

Light source specifications

ITRS*
  = 13.5 nm ( = 2 %)
 115 W at IF (100 wafers/hour)
 > 7 ~ 10 kHz From EUVA Official website

 Debris-free (lifetime > 30,000 hours)

8
* International Technology Roadmap for Semiconductor
 DPP Source
Schematic of DPP EUV Light Sources
Gas jet
Z-pinch

Subsystems of DPP EUV Light Source Diagnostics

•Electrical pulse power driver •EUV photon detector

•Discharge head •EUV energy monitor
•Auxiliary systems like gas feeder •EUV pinhole camera
and pumping system •EUV spectrometers
•Time resolved visible light imaging
•Current and Voltage probe 9
 DPP Source

10

HV 403 nF Unsat. inductor 8

Current [kA]
Pulse K
6

Power 4

2
Driver-I SI Thy A
0
0 1 2 3 4
Time [ m s]

403 nF Magnetic Switch 15

HV PT
Pulse 1:3

Current [kA]
10
K
Power
SI Thy 40 nF z
Driver-II 5
A
0
-0.2 0 0.2 0.4
Time [ m s]

Driver I Driver II

dI/dt 20 A/ns 57 A/ns

Pulse width 3ms 350 ns
Input energy 5.6 J 4.7 J
10
 Capillary Plasma

Capillary head

Cold water
Cathode : Mo
Inner diameter : 5 mm
Outer diameter : 38 mm
Length : 13 mm

Xe gas
Anode : Mo
Inner diameter : 8 mm
Max. diameter : 32 mm
Length : 13 mm

Capillary : Al2O3
Cold water Inner diameter : 1, 2, 3 mm
Outer diameter : 40 mm
Length : 10 mm

11
 DPP Source

Auxiliary systems

Gas Supplying Part Magnetic Switch Vacuum Chamber

Baratron
Control Valve Magnetic Vacuum
switch chamber
EUV Light

Valve
Xe Gas Discharge Pumping
Part System
Pumping Part
Rotary Pump+TMP
PFN (Capacitor Bank)

•Flexible enough to allow quick change of discharge head, gases, driver

energy etc.
•To detect EUV emission simultaneously using many diagnostics

GREMI EUV device 12

 EUV Diagnostics

EUV photon detector Simple and Indispensable !!!

Time evolution of EUV photon output in the range of 5 to 18 nm

Zr/C filter IRD AXUV-10

EUV energy monitor
Absolute in band energy measurement at 13.5 nm ±2% BW

EUV energy monitor

Zr filter Multilayer
Mirror

13
Calibrated by JENOPTIK Energy monitor (E-MON)
 EUV Diagnostics

EUV Pinhole camera

Magnification at axis: 1.7

at 45°: 2.1
at 90°: 3.1

Filter: 150 nm Zr having transparency of ~ 13% EUV light in between 5 to 18 nm

Pinhole: 50 μm diameter
X-ray CCD: Andor Techno. Ltd. DO434 (1024 x 1024 pixels, 13 x 13 μm2)

14
 EUV Diagnostics

EUV spectrographs Grazing incidence spectrometer McPerhson 248/310G

detector chamber

vacuum chamber

grating box
aperture

Specification Value

Grating radius (R) 998.8 mm

Angle of incidence () 87 degree

Groove density (d) 600

Observable range 1 ~ 70 nm

Resolution 0.36 nm

15
 EUV Diagnostics

Transmission grating spectrometer

Specification Value

Pinhole diameter S 50 mm

Aperture diameter of grating A 50 mm

Total length D 750 mm

Grove density 1000 lines/mm

Resolution 0.45 nm

16
 Capillary Plasma

Block diagram of experimental setup with diagnostics

Xe Gas Angular Distribution

Measurement tool
EUV Pinhole
Camera
Gas Flow
Controller Visible Light
Spectrometer &
Discharge Camera
Head
EUV
Detection Chamber Spectrometer

Cooling
P
Pulse Power Arrangement u EUV
Driver I or II m Energy monitor
p
EUV
Photodiode 17
 Capillary Plasma

Results of EUV photo detector

High dI/dt pulse
Low dI/dt pulse 30 15
30 15
Photodiode
(5~18 nm)

Photodiode [V]
20 10
Photodiode [V]

Current [kA]
20

Current [kA]
Discharge 10
Discharge
current current
Photodiode
10 5 10 5
(5~18 nm)

0 0 0 0
0 1 2 3 4 0 0.2 0.4 0.6
Time [ms] Time [ms]

Photon intensity: 10V Photon intensity: 22 V

Photodiode intensity [a.u.]

Low dI/dt pulse

High dI/dt pulse
1

Dependence of
photon intensity on 0.5
supply pressure
0
2 4 6 8
Pressure [Torr] 18
 Capillary Plasma

Absolute in-band EUV energy measurement

At 10 degree
Low dI/dt pulse High dI/dt pulse
EUV energy 2.5 3.3
[mJ/sr/2%BW/pulse]

Angular variation of in-band energy

EUV energy [mJ/sr/2% BW]

5
Low dI/dt pulse
4 High dI/dt pulse
0
3
To scope 2

EUV energy monitor Capillary 0

0 10 20 30 40 5019 60
Angle [degree]
 Capillary Plasma

Effect of dI/dt and pressure on EUV pinhole images

Low dI/dt pulse High dI/dt pulse

Pressure 0 45 0 45

3 Torr

4 Torr
Source diameter FWHM [mm]

Integrated intensity [a.u.]

Low dI/dt pulse 3
1 High dI/dt pulse 5 Torr
2

0.5 6 Torr
1

7 Torr
0 0
2 4 6 8
Pressure [Torr] 20
8 Torr
 Capillary Plasma

Effect of dI/dt on positional stability

Low dI/dt pulse High dI/dt pulse
Center position
of individual shots
Y

Y
2 mm 2 mm

X Standard deviation σ X

X：±0.16 mm X：±0.018mm
Y：±0.13 mm Y：±0.013mm

 Peak intensity positions of 20 pinhole image shots were superimposed.

 Positional stability of fast pulse is better than that of slow one.
21
 Capillary Plasma

Stability at high dI/dt pulse

 Single pulse : 0.718 mm (FWHM)

 20 pulses : 0.748 mm (FWHM)

Plasma size appears about 5 % larger in 20 pulses than in single pulse

experiments due to the fluctuations in positional stability.
22
 Capillary Plasma

Grazing incidence spectra

150
200 ns 150
500 ns
Time 1 Time 2
Xe9+

Intensity [a.u.]

Intensity [a.u.]
100 Xe11+ 100 O4+
Xe10+
Xe9+
Xe8+
50 50

0 0
10 11 12 13 14 15 16 17 18 19 10 11 12 13 14 15 16 17 18 19
Wavelength [nm] Wavelength [nm]

150
700 ns 150
1200 ns
Time 3 Time 4
O4+

Intensity [a.u.]
Intensity [a.u.]
100 100
Xe9+
O4+
Peaks at 11, 12.5, 13.5 and 15 nm Xe8+
50 50

0 0
10 11 12 13 14 15 16 17 18 19 10 11 12 13 14 15 16 17 18 19
Wavelength [nm] Wavelength [nm]

Time-resolved spectral analysis indicates different ionization states of Xe

 After the max. of discharge current only O impurity lines dominate

23
GREMI EUV spectra
 Capillary Plasma

Transmission grating spectra

 Vcharge : 9 kV
 200 Hz operation
and 200 pulses
averaged signal

2000 3Torr 2000 7Torr

4Torr 8Torr

intensity[a.u.]
5Torr
intensity[a.u.]

9Torr
6Torr 10Torr
1500 1500

1000 1000

10 12 14 16 18 10 12 14 16 18
wavelength[nm] wavelength[nm] 24
 Capillary Plasma

Summary

•A high dI/dt discharge current is better for producing smaller and stable EUV
emitting plasma
• Maximum in-band energy obtained at source :3.3 mJ/sr/2%BW/pulse
•EUV spectra show the evidence of emission at 13.5 nm

25
Survey: No EUV until 2015 or later

By Ann Steffora Mutschler, Senior Editor -- Electronic News, 9/7/2007

According to a semiconductor manufacturing survey conducted by WeSRCH,
the social networking site of market research firm VLSI Research Inc., 85
percent of respondents said that extreme ultraviolet (EUV) lithography will not
make it to production until 2015 or later, with 74 percent of respondents saying
that EUV will reach production between 2015 and 2024.

26
27
Gas Jet Pinch Plasma

28
 Gas Jet Pinch Plasma

Background
Capillary Gas jet pinch

cathode anode cathode(nozzle) anode(diffuser)

insulator

Xe pump
Xe

Debris

Demerits Improvements
 Debris from the insulator/electrodes  No insulator in the new design
 Thermal load to the insulator  Collection of EUV light
from radial direction
 Narrow solid angle Large solid angle
 Debris and EUV light in the same Less debris in EUV light
direction
29
 Gas Jet Pinch Plasma

Background
Capillary Gas jet pinch

cathode anode cathode(nozzle) anode(diffuser)

insulator
He gas curtain
Xe pump
Xe
He gas curtain

Debris

Demerits Improvements
 Debris from the insulator/electrodes  No insulator in the new design
 Thermal load to the insulator  Collection of EUV light
from radial direction
 Narrow solid angle Large solid angle
 Debris and EUV light in the same Less debris in EUV light
direction
30
 Gas Jet Pinch Plasma

Discharge head cathode anode cathode anode

Curtain
gas Curtain
gas
Xe

Curtain
gas

anode 125 mm

Xe  Cathode (dual orifice nozzle)

cathode
- Inner nozzle diameter: 2 mm
- Outer nozzle diameter
Inner diameter: 11.6 mm
Outer diameter: 12 mm
Curtain  Anode (diffuser)
gas
Inner diameter: 6 mm
Outer diameter: 20 mm 31
 Gas Jet Pinch Plasma

Time resolved EUV photon measurement 5 -18 nm

40 15 He
With He gas curtain and diffuser

Discharge current [kA]

With He gas curtain
Without gas curtain and diffuser
30
EUV signal [V]

10

20
pump
5 Xe
10 cathode anode

0 0
-100 0 100 200 300 400 500 He
Time [ns]

EUV photons appear after 70 ns of initiation of discharge current and reach

a maximum nearly just before the maximum of current pulse

The EUV intensity peak as well as EUV photon flux improves around 30 %
32
because of the presence of gas curtain
 Gas Jet Pinch Plasma

Absolute in-band EUV energy measurement

gap distance ：12 mm, Xe pressure ：20 Torr, with He gas curtain and diffuser

Angular distribution of EUV radiation

EUV energy [mJ/sr/2% BW]

5
cathode anode 4

0
-20 -10 0 10 20
Angle [degree]

EUV energy = 4.66 mJ/sr/2％BW/pulse

33
Energy monitor
 Gas Jet Pinch Plasma

EUV pinhole images gap distance ：12 mm

15 Torr 20 Torr

25 Torr 30 Torr

4 mm
1000 6 mm
8 mm
800 10 mm
12 mm
Intensity [a.u.]

14 mm
600 16 mm

400

200

0 34
10 20 30
Xe pressure [Torr]
 Gas Jet Pinch Plasma

Positional stability

Radial Single pulse Radial 20 pulses

Axial Axial

1 pulse 20 Remark
pulses
Length Axial 0.34 0.96 - 20 pulses :
(FWHM) [mm] 2.5 times
Radial 0.07 0.16 larger
[mm]
35
 Gas Jet Pinch Plasma

Effect of gas curtain on EUV emission

gap distance ：12 mm，Xe pressure ：20 Torr

Without gas curtain With He gas curtain

2 mm

4.3 mm He：120 sccm

Length [mm] axial 0.92 Length [mm] axial 0.80

（FWHM） radial 0.16 （FWHM） radial 0.14
Intensity [a.u.] 967 Intensity [a.u.] 1213

36
 Gas Jet Pinch Plasma

Dependence of EUV intensity on pressure

Without gas curtain

He gas curtain 120 sccm
1500 He gas curtain 240 sccm
He gas curtain 280 sccm
Intensity [a.u]

1000

500

0
10 20 30
Xe pressure [Torr]

Nearly 25 to 50 % increase in EUV intensity is marked in 20 to 25

Torr Xe gas pressure because of the presence of gas curtain .

37
 Gas Jet Pinch Plasma

Transmission Grating Spectrometer

11 nm
13.5 nm
15 nm
16.5 nm

38
 Gas Jet Pinch Plasma

Summary

 New gas jet pinch discharge system successfully demonstrated the

concept of radial extraction of EUV light.

 Highly intense and small size EUV emitting plasma was produced at Xe
pressure of 20 Torr.
 Total EUV energy at the optimum condition is 4.6 mJ/2％BW/pulse.
 He gas curtain limits the expansion of Xe gas jet and increases the EUV
intensity.

e
39
40
 Source material
 elements having an atomic number Za
~ 30 (Zn), Za ~ 50 (Sn) and Za ~ 75 (Re)
Zn Re
are likely to produce the highest yield
Sn
 The not-optimal EUV power level
achieved using Xe, about a factor of 10 is
yet missing for the lithography
application, brought some of the research
back to the spectrally much more
Xe
favorable element of tin (Za = 50), in
spite of the huge debris problem which is
to be expected
Dependency of the conversion efficiency (CE)
at  = 13.5 nm on the atomic number Za of the
target material. The CE was measured on laser
plasmas at a power density of 1012 W/cm2
41
  Ein : Input energy of pulse power
supply/pulse [J/pulse]
 CE : Conversion efficiency
 Tsystem : Transmission ratio of debris
shield and purity filter
Ein CE Tsystem collection Tgas Rep-rate  collection : Collection efficiency
 Tgas : Gas absorption
 Rep-rate : System frequency [Hz]

42
 Collection efficiency - collection
Discharge produced plasma (DPP) Laser produced plasma (LPP)

DPP LPP
Max. solid angle 2 4
Condenser mirror Grazing Normal
incidence incidence
Collection efficiency 29% ( 50%) 40% ( 50%)

Discharge structure, mirror and plasma generation

43
LPP vs DPP

back 44
Source Specifications
ITRS*-2004
•EUV power at the intermediate focus 115 W in 2% BW
•Repetition rate > 7 – 10 kHz
•Energy stability  0.3%, in 3  over 50 pulses
•Lifetime > 30,000 hours of operation
•Maximum etendue of source output < 3.3 mm2sr
•Maximum solid angle input to illuminator 0.03 – 0.2 sr
•Spectral purity:
10 – 40 nm TBD (To be declared)
40 – 130 nm TBD
130 – 400 nm (DUV/UV) < 3 – 7%
> 400 nm TBD
•Pulse-to-pulse positional stability < 10% of source size
•Source emission volume   1.3  1.5 mm2
•Vacuum before intermediate focus TBD
•Spatial distribution of power TBD
•Stability of repetition rate <  0.1% (long term)
•Angular distribution of power TBD
•Rotational symmetry of power TBD

* ITRS-International Technology Roadmap for Semiconductor 45

 Factors that influence EUV Lithography tool

Source Optics Products

Chamber Contamination Wafer size
Power Trans.
life Illuminator
Spectral Max field Test wafer
purity Stability size Collimation
Rep rate Material damage Mask

Stage accel.
Stage speed Vibration isolation
Acid reaction rate Transparency Alignment mark
Wafer
Overlay calculation
Photo resist sensitivity load/unload
Alignment
46
back
 47
back
 GREMI EUV Source looks like……..
0.8- 7.2 J
Switch

Capillary

0.6 m* 0. 7 m* 1.7 m

25 cm
* Much compact * Cost-effective
* Simpler in design * Easy to operate

back MEE (2003);PSST (2003)

48
 EUV Spectrometer

Gazing incidence Jobin-Yovon

Spectrometer (15-35 nm max.
Efficiency, 0.1 nm spectral
resolution, 10 nm temporal
resolution):

Pinhole imaging facility •800 g/mm platinum coated grating

•Two stage MCP (Galileo 3040FM)
•ICCD array detector (Princeton)

1700 A° thick Zr filter allows only 10-16 nm

EUV radiation

back 49
Results Time integrated xenon spectra at 0.46 mbar for different charging voltages

Xe10
Xe 11 Xe 9 Oxygen Lines

7000
15 kV
18 kV
6000
24 kV

5000
• Three broad band peaks of Xe
Intensity [a.u.]

4000 centered at 11, 13.5 &15 nm

3000

2000 • Oxygen lines from wall

1000

0
10 12 14 16 18 20 22 24 26 28 • Xe/O lines intensity increases
Wavelength [nm] with the increase in voltage

• Observation of 11 nm peak indicates that plasma temp. of 45 eV

50
 Results Time resolved spectra at 0.46 mbar and 24 kV charging voltages

800 800 800

115 ns
50 ns 70 ns

Intensity [a.u.]

Intensity [a.u.]
Intensity [a.u.]

600 600 600

400 400 400

200 200 200

0 0 0
8 10 12 14 16 18 20 22 24 26 28 8 10 12 14 16 18 20 22 24 26 28 8 10 12 14 16 18 20 22 24 26 28
W avelength [nm ] W avelength [nm ] W avelength [nm ]

•11nm broad band peak appears first & it goes maximum at the maximum of compression.

•At the instant of maximum of discharge current the 13.5 nm peak appears to be prominent.
•Spectra trapped after first half cycle of current do not show any emission from broad bands.

back
51
Results
Pinhole (50 µm) MCP

Capillaire 7 cm 70 cm ICCD
Time resolved pinhole images from 10 mm long 1.2 mm diameter alumina capillary at 1 torr Xenon and at
24 kV charging voltage...
45 ns 50 ns 60 ns 95 ns 110 ns

6000
5000 45 ns 50 ns 60 ns 95 ns 110 ns
Intensity

4000
3000
2000
1000
0 -60-40-20 0 20 40 60
-60-40-20 0 20 40 60 -60-40-20 0 20 40 60 -60-40-20 0 20 40 60 -60-40-20 0 20 40 60
Pixels
•A second faint compression observed at the maximum of discharge current.
•The beam intensity profile changed from single peak pattern to annular pattern.
Annular pattern may be due to increased refraction of EUV beam caused by larger density in plasma column.

52
 Magnetic Pulsed Compression circuit

Magnetic switch MS1 MS2

v0 v1 v2
B

C0 C1
H i0 C2
0 i1 i2

(a) circuit
hysteresis loop ferromagnetic material (Finemet) v0 v1 v2
V
V  t
    B  S 

i2
Φ : flux reversal
χ : rate of occupation
i1
B : magnetic flux density
S : cross section of magnetic path i0
V : magnetic switch voltage
t : pulse width
t0 t1 t2 t
(b) operation C0=C1=C2 53
 New Set-up of Hotta Lab EUV Source
LC inversion circuit 2 stage MPC circuit

1st Magnetic
Switch
(2turns)

HV Ceramics Capacitor

Capacitor Capacitor bank

4uF ×2 2nd Magnetic Switch

1:1 Transformer
1:3
Transformer

RF
gas supply
preionization

RF power
supply
Xe gas
Rotary pump
preionization +
TMP
pump 54
 PFN (Pulse Forming Network)
Pulse Power Driver I ・ 68 Ceramic capacitor (5.3 nF, 20kV)
・ Total Capacitance : 370 nF
・ Impedance : 0.44 

HV
PFN 430 nF
L L

SI
C C
thyristor
SI Thyristor Stack stack
Magnetic
・3 thyristors connected in series
D switch
・Blocking voltage : 12.0 kV R
・Conducting current : 400A
Load

Reset
Discharge current [kA]

Anode Cathode
Switch voltage [kV]

10 10 circuit

5 5 Low dI/dt (20A/ns, 3μs)

0 0 55
0 1 2 3
 Primary capacitor
Pulse Power Driver II bank (370 nF) Magnetic Switch Voltage
probe
HV

Cathode
Switch 40 nF Load

Anode

1：3
Secondary Current
High dI/dt (57 A/ns, 350ns) capacitor bank probe

10 Driver I Driver II
Current [kA]

Current dI/dt
5 20 A/ns 57 A/ns
Pulse width
0
-100 0 100 200 300 400 500 3ms 350 ns
Time [ns]
Electrical input energy
into capillary (per shot)
5.6 J 4.7 J 56
 Effect of dI/dt on the etendue*
Capillary edge

15
Low dI/dt pulse
High dI/dt pulse 5 Torr

Etendue [mm2sr]
0 0 0 High dI/dt pulse 10 Torr
10

5
Radial

Axial
0
0 15 30 45 60 75 90
Collection angle [degree]

45 45 45

Low dI/dt pulse High dI/dt pulse High dI/dt pulse

Xe : 5 Torr Xe : 5 Torr Xe : 10 Torr

*Etendu: A measure of the capacity of an optical system to transfer power

57
 The singularity current probe signals is observed due to large change
in the plasma impedance during the pinching. The rapid increase in plasma
impedance can be understood principally in term of the rapid increase in plasma
inductance. As the plasma inductance during radial phase is given as
L=Zp*(µ/2* π )ln(a/rp)
Where a is the initial radius, Zp and rp are length and radius of plasma column).

The intensity of Xe emission

around 13.5 nm is mainly due
to 4d8 - 4d75p transitions of the
Xe+10 ion

58