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I.

Silicon wafer fabrication


1.1 Silicon crystal structure
1.2 Czochralski growth 1.3 Crystal defects

1.4 Wafer engineering

EEE8103/EEE8019 Semiconductor device fabrication

Semiconductors used in microelectronics and nanotech applications


Some examples: Si SiGe SiC GaAs AlGaAs InP InSb CdTe etc etc etc In addition to other materials used for contacts, isolation, passivation, etc.

EEE8103/EEE8019 Semiconductor device fabrication

Semiconductors used in microelectronics and nanotech applications


Some examples: Si SiGe SiC GaAs AlGaAs InP InSb CdTe etc etc etc In addition to other materials used for contacts, isolation, passivation, etc. We will concentrate mostly on silicon based devices
EEE8103/EEE8019 Semiconductor device fabrication

Why silicon?

It is a semiconductor One of the most abundant elements on Earth It forms a high quality oxide Most semiconductor devices in microelectronics are silicon based

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal structure

Unit cell

a = 0.543 nm
(atomic constant)

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal structure

Unit cell

a = 0.543 nm
(atomic constant)

Description: two interpenetrating face-centred cubic lattices, displaced along the body diagonal of the cubic cell by one quarter the length of the diagonal

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal structure

Lets go step by step... two interpenetrating face-centred cubic lattices, displaced along the body diagonal of the cubic cell by one quarter the length of the diagonal

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal structure


A silicon crystal looks more or less like this:

EEE8103/EEE8019 Semiconductor device fabrication

Crystal planes & Miller indices


(100) (110) (111)

EEE8103/EEE8019 Semiconductor device fabrication

I. Silicon wafer fabrication


1.1 Silicon crystal structure
1.2 Czochralski growth 1.3 Crystal defects

1.4 Wafer engineering

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)


Purification of silicon
Silica sand (SiO2)

www.kaolin.bg

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)


Purification of silicon
Silica sand (SiO2) First stage: at high temperature (~ 1900C) SiO2 + 2C Si + 2CO SiO2 + C Si + CO2 metallurgical-grade silicon (MGS) 98% pure
www.kaolin.bg

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)


Purification of silicon
Silica sand (SiO2) First stage: at high temperature (~ 1900C) SiO2 + 2C Si + 2CO SiO2 + C Si + CO2 metallurgical-grade silicon (MGS) 98% pure
www.kaolin.bg

Second stage: trichlorosilane purification (SiHCl3)


Si + 3HCl SiHCl3 + H2
(impurities also react with HCl)

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)


Purification of silicon
Silica sand (SiO2) First stage: at high temperature (~ 1900C) SiO2 + 2C Si + 2CO SiO2 + C Si + CO2 metallurgical-grade silicon (MGS) 98% pure
www.kaolin.bg

Second stage: trichlorosilane purification (SiHCl3)


Si + 3HCl SiHCl3 + H2
(impurities also react with HCl)

Third stage: distillation (to separate impurities)

2SiHCl3 + 2H2 2Si + 6HCl


electronic-grade silicon (EGS)
EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)

doping can be incorporated in the melt

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)


Silicon ingot

EEE8103/EEE8019 Semiconductor device fabrication

From ingot to wafer


A diamond cutting wire is used to saw the ingot into slices

www.mandecorp.com

EEE8103/EEE8019 Semiconductor device fabrication

Silicon crystal growth (Czochralski method)


Silicon wafer High resolution micrograph of the silicon crystal (TEM)

EEE8103/EEE8019 Semiconductor device fabrication

Wafer shaping

EEE8103/EEE8019 Semiconductor device fabrication

I. Silicon wafer fabrication


1.1 Silicon crystal structure
1.2 Czochralski growth 1.3 Crystal defects

1.4 Wafer engineering

EEE8103/EEE8019 Semiconductor device fabrication

Crystal defects

EEE8103/EEE8019 Semiconductor device fabrication

I. Silicon wafer fabrication


1.1 Silicon crystal structure
1.2 Czochralski growth 1.3 Crystal defects

1.4 Wafer engineering

EEE8103/EEE8019 Semiconductor device fabrication

Wafer engineering
Epitaxial wafers

epitaxial Si
particles

Si substrate (Czochralski wafer)

Silicon on insulator (SOI)

Si cap buried oxide Si substrate

EEE8103/EEE8019 Semiconductor device fabrication

Wafer engineering: SOI


Methods to fabricate SOI wafers: Wafer bonding Smart-cut TM SIMOX

Si cap buried oxide Si substrate

EEE8103/EEE8019 Semiconductor device fabrication

SOI: wafer bonding


1. Starting material 2. Epitaxial growth
epi Si p++ epi Si Si substrate

Si substrate

Si substrate

Si substrate

5. Backside polish/etch
epi Si oxide Si substrate
EEE8103/EEE8019 Semiconductor device fabrication

oxide epi Si p++ epi Si Si substrate oxide Si substrate

4. Bonding

3. Oxide growth
oxide epi Si p++ epi Si Si substrate

oxide Si substrate

SOI: Smart cut


1. Hydrogen implant
weak region oxide oxide donor Si wafer Si substrate

2. Bonding
oxide oxide donor Si wafer Si substrate

3. Splitting
donor Si wafer reusable Si oxide oxide Si substrate

EEE8103/EEE8019 Semiconductor device fabrication

SOI: SIMOX
1. Oxygen implant 2. Annealing

Si substrate

Si oxide Si substrate

EEE8103/EEE8019 Semiconductor device fabrication

I. Silicon wafer fabrication


1.1 Silicon crystal structure
1.2 Czochralski growth 1.3 Crystal defects

1.4 Wafer engineering

EEE8103/EEE8019 Semiconductor device fabrication

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