Professional Documents
Culture Documents
5,917,195
Jun. 29, 1999
[75]
Inventor:
SpitZer et al., Raman scattering by optical phonons in isotopic 7O(Ge)n 74(Ge)n Superlattices, vol. 72, No. 10, ISSN
00319007, pp. 15651568, Mar. 7, 1994.
Filed:
[52]
[58]
Enriched 12 C Diamond, Physical RevieW B, vol. 42, No. 2, pp. 11041111, Jul. 15, 1990I. Arai et al., Practical Separation of Silicon Isotopes by IRMPD of Si2F6, Appl. Phys. B 53, pp. 199202, 1991. BereZin, On the possibility of Isotope Ordering and Isoto
257/94, 96, 97
[56] References Cited
U.S. PATENT DOCUMENTS
4,344,984 8/1982 Kaplan et al. .
4,349,796
4,469,977
4,505,791
4,591,889
3/1985 Angeli .
5/1986
9/1990 4/1991
Lattice Parameter of Germanium Perfect Crystals, Physical RevieW B, vol. 38, No. 8, pp. 52195221, Sep. 15, 1998I.
(List continued on neXt page.)
Primary ExaminerGene M. Munson Attorney, Agent, or FirmBrenda Herschbach J arrell; Sam Pasternack; Choate, Hall & SteWart
4,785,340
4,959,694 5,012,302
[57]
ABSTRACT
pating in phonon-electron interactions. Speci?cally, a phonon resonator that is resonant for phonons of appropriate
momentum to participate in indirect radiative transitions
and/or inter Zone intervalley scattering events is provided. Preferably, the structure is an isotope superlattice, most preferably of silicon. The structure of the present invention
OTHER PUBLICATIONS
MiZuno et al., Theory of acousticphonon transmission in ?nitesiZe superlattice systems, vol. 45, No. 2, ISSN 01631829, pp. 734741, Jan. 1, 1992.
28Si
,
28Si
28Si
soSi
3oSi
308i
7 28 Si
30Si
2831
30Si 308i
Interface
28Si
28Si
285i
\
28si
205i
28si
205i
J
5,917,195
Page 2
OTHER PUBLICATIONS
Iyer et a1., Light Ernission frorn Silicon, Science, vol. 260, pp. 4046, Apr. 2, 1993. Karnioka et a1., IsotopeSelective Infrared Multiple Photon
Collins et a1., Indirect Energy Gap of 13C Diarnond, vol. 65, No. 7, pp. 891894. Aug. 13, 1990.
17601770, Sep. 9, 1986. Koblinger et a1., Phonon Stop Bands in Arnorphous Super lattices, Physical RevieW B, vol. 35, No. 17, pp. 93729375, Jun. 125, 1987I.
Liu et al., A RHEED Study of the Surface Reconstructions
Semiconductor Superlattices and Quantum Wells, Journal of Quantum Electronics, vol. QE22, No. 9, pp. 16111624, Sep. 1986.
Etchegoin et al. Phonons in isotopically disorded Ge Physical RevieW B, vol. 48, No. 17, Nov. 1, 1993I.
Fuchs et a1., Anharrnonic Decay Tirne, Isotopic Scattering Time, and Inhornogeneous Line Broadening of Optical phonons in 70Ge, 76Ge, and natural Ge Crystals, Physical
RevieW B, vol. 44, pp. 86338642, No. 16, Oct. 15, 1991II.
Fuchs et a1., Infrared Absorption in 76 Ge and Natural Ge
Fuchs et a1., Isotopic Ge Superlattices: Vibrational Prop erties, Superlattices and Microstructures, vol. 13, No. 4, pp.
4474581993.
Sci. Technol. A 10(4), pp. 19131919, Jul/Aug. 1992. SpitZer et a1., Rarnan Scattering by Optical Phonons in
Spectrum of Diamond, Physical RevieW B, vol. 44, pp. 1204612176, No. 21, Dec. 1, 1991I.
Itoh et a1., High Purity Isotopically Enriched 70 Ge and 74
U.S. Patent
Sheet 1 0f 15
5,917,195
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U.S. Patent
Sheet 3 0f 15
5,917,195
kI
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FIG.8
U.S. Patent
Sheet 4 0f 15
5,917,195
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U.S. Patent
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U.S. Patent
Sheet 6 0f 15
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U.S. Patent
Sheet 7 0f 15
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U.S. Patent
Sheet 8 0f 15
5,917,195
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U.S. Patent
Sheet 9 0f 15
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U.S. Patent
Sheet 10 0f 15
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U.S. Patent
Sheet 11 0f 15
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U.S. Patent
Sheet 12 0f 15
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U.S. Patent
Sheet 13 0f 15
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U.S. Patent
Sheet 14 0f 15
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U.S. Patent
Sheet 15 0f 15
5,917,195
FIG.32
320
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5,917,195
1
PHONON RESONATOR AND METHOD FOR ITS PRODUCTION
BACKGROUND OF THE INVENTION Semiconducting materials have proven to be the corner
2
In addition, LEDs have been fabricated using silicon carbide. HoWever, it has not been possible to produce optical
silicon).
SUMMARY OF THE INVENTION
connect demands associated With increasing parallelism and higher data rates. Additionally, pressure to reduce device siZe and density has focused efforts on identifying materials With improved heat dissipation and/or electrical conductiv
ity characteristics.
The use of superconducting materials, in combination With established semiconductor technologies, has been pro
posed as a solution to the heat dissipation problems encoun
istics are modi?ed because certain electron-phonon interac tions are enhanced or suppressed in the material.
tered With present-day semiconducting materials. Speci?cally, it has been suggested that superconducting
Wires and junctions could be used in integrated circuits to reduce heat dissipation. Unfortunately, even recently
discovered high temperature superconductors do not oper ate above cryogenic temperatures. Moreover, the expense and engineering dif?culty associated With integration of
electrical conductivity. The phonon resonator of the present invention can also shoW improved thermal conductivity characteristics, and can be incorporated into electronic devices to provide improved heat transfer. The present invention also provides an isotope superlattice that is a phonon resonator.
The phonon resonator of the present invention can be
itself, like the other members of its periodic-table family (group IV), has limited optical capabilities due to its cen
trosymmetric crystal structure and an indirect band gap,
incorporated into any of a variety of different optical devices such as, for example, LEDs and lasers. The present phonon resonator can be utiliZed, for example, in optical
35
(e.g. phonons of appropriate Wavevector to participate in radiative electronic transitions, phonons of appropriate
Wavevector to participate in interZone and/or intervalley
55
display devices.
5,917,195
3
In preferred embodiments of the present invention, the
phonon resonator is a layered structure comprising an iso
4
isotope superlattice is preferably performed by a method
selected from the group consisting of: chemical vapor
tope superlattice in Which each layer is enriched for one isotope of an element. Most preferably, the layers are enriched for different isotopes of the same element, prefer
ably silicon. In some preferred embodiments of a silicon
deposition, molecular beam epitaxy, and chemical beam epitaxy. In some embodiments, the steps of separating and assembling are performed separately. In alternate embodiments, the steps of separating and assembling are performed simultaneously. In preferred embodiments, an isotope superlattice of the present invention is produced using laser-assisted chemical vapor deposition.
10
DraWings
FIG. 1 is a schematic diagram of the energy bands in a solid.
FIG. 2 is an energy vs. momentum diagram for a direct
bandgap material.
FIG. 3 is an energy vs. momentum diagram for an indirect
The present invention also provides various devices incor porating a phonon resonator. The invention provides, among other things, a light-emitting device, comprising a phonon
resonator, a ?rst electrode disposed on a ?rst side of the structure; and a second electrode disposed on a second side
bandgap material.
FIG. 4 illustrates the three possible photon-electron inter actions. Speci?cally, FIG. 4A illustrates absorption of a
photon by an electron that can occupy one of only tWo energy states; FIG. 4B illustrates spontaneous emission of a photon by an electron that can occupy one of only tWo energy states; and FIG. 4C illustrates stimulated emission of a photon by an electron that can occupy one of only tWo
energy states.
of the structure, the second side being opposite the ?rst side.
At least one of the electrodes can be transparent if desired.
The light-emitting device of the present invention can include a p-doped region and an n-doped region, and may
function as a light-emitting diode (LED). The p- and
25
crystalline solid.
FIG. 6 depicts phonon-assisted radiative transitions in an indirect bandgap material. FIG. 6A illustrates spontaneous
emission of a phonon as a result of an electron-phonon
interaction that stimulates photon emission; FIG. 6B illus trates stimulated phonon absorption; and FIG. 6C illustrates stimulated phonon emission.
FIG. 7 is a schematic design of a distributed feedback laser.
FIG. 8 is an energy vs. momentum diagram for silicon. FIG. 9 shoWs a schematic diagram of a portion of a silicon
face emitting).
The present invention also provides devices selected from
optical detectors, optical modulators, non-linear optical devices, electrical conductors, planar transformers, diodes, bipolar transistors, ?eld-effect transistors, integrated circuits, SQUIDs, Josephson junctions, transducers, and
microWave detectors, that are improved over conventional
45
devices because they incorporate a phonon resonator that is substantially resonant for phonons of appropriate Wavevec tor to participate in phonon-electron interactions. The present invention also provides a method for produc ing a phonon resonator comprising the step of producing a
phonon resonator of the present invention. FIG. 11 presents four embodiments (as FIGS. 11A, 11B, 11C, and 11D) of a light-emitting device of the present invention. FIG. 12 depicts a light-emitting diode (LED) of the present invention. FIG. 13 depicts an LED of the present invention in Which
carrier con?nement is achieved by means of a heterojunc tion.
55
FIG. 16 depicts a Vertical Cavity Surface Emitting Laser (VECSEL) of the present invention.
FIGS. 17 and 18 depict alternate embodiments of an
optical photodetector incorporating a phonon resonator of the present invention. FIG. 19 depicts absorption and emission of a phonon by
a conduction-band electron in a semiconductor material.
producing an isotope superlattice by separating isotopes; and assembling the superlattice. According to the present invention, isotope separation is preferably performed by a
method selected from the group consisting of distillation,
65
FIG. 20 depicts coherent absorption and emission of a phonon by a conduction-band electron in a semiconductor material.
5,917,195
5
FIG. 22 illustrates phonon-mediated exchange between electrons in different, degenerate conduction band minima in
a single conduction band of a semiconductor material.
6
Which the phonon resonator affects the optical, electronic, and/or heat transfer properties of the material from Which
the resonator is constructed.
FIG. 23 presents a graph of the normaliZed electron pair potential as a function of the pair separation, measured in superlattice periods. For the calculation presented, the mean
free path.
FIG. 25 shoWs the electron pair binding energy as a function of the scattering potential for a ?xed mean free
path.
FIG. 26 depicts intervalley scattering of electrons in
conduction band minima of neighboring Brillouin Zones. FIG. 27 shoWs a loW-resistance electrical conductor of the
15
present invention.
FIG. 28 depicts an electrical diode of the present inven tion. FIG. 29 depicts a bipolar transistor of the present inven tion. FIG. 30 depicts an n-type Junction Field Effect Transistor
as opposed to direct bandgap materials. First of all, We point out that, in any semiconductor solid (i.e. Whether a direct or indirect bandgap material) that is free of defects and impurities, electrons can acquire only particular energy values that are Within tWo discrete bands: a valence band, Which encompasses the range of energies possessed by electrons in bound energy states; and a con duction band, Which corresponds to the alloWable energy
states of free electrons or electrons that are unbound and
duction band 20, separated by an energy bandgap 30 that corresponds to the range of impermissible energies betWeen
25
Transistor (MOSFET) of the present invention. FIG. 32 depicts an integrated circuit of the present inven
tion. FIG. 33 depicts a laser-assisted chemical vapor deposition
the valence 10 and conduction 20 bands. For any given semiconductor solid, most of the energy states Within the valence band are occupied by electrons, While most of the energy states Within the conduction band are unoccupied. If, hoWever, an electron in the valence band can acquire energy in excess of the energy of the bandgap,
that valence band electron can occupy an energy state Within
behave as quantum mechanical vibrational Wavepackets. By analogy With optical resonators, a vibrational resonator requires coherent con?nement, or feedback, of vibrational
energy. It is possible to construct an electromagnetic resonator
present at the valence band maximum. Under certain circumstances, these electrons and holes can recombine, resulting in the emission of a photon, otherWise knoWn as a radiative transition. To obtain a radiative transition, both
energy and momentum must be conserved. Radiative transitions are alloWed in direct bandgap mate
45
rials. In fact, the term direct bandgap refers to the fact that the conduction band minimum and valence band maximum are aligned in these materials along the same momentum value. This fact is illustrated in FIG. 2, Which presents a graph of the energy versus momentum (k) relationship of an electron in a direct bandgap solid. The region 37 of the
resonant With certain phonon-electron interactions, so that the resonator provides a resonant enhancement of the
the conduction band, and curve Ev (the valence band edge) designates permissible energy and momentum values for
55
phonons necessary for those interactions. Although phonon resonators have previously been described previously (see,
for example, Klein IEEE J. of Quant. Elec. QE-22: 17601779, 1986), the present invention describes for the
?rst time a phonon resonator that provides resonant
electrons in the valence band. The energy difference betWeen the conduction band minimum 22 of curve EC and valence band maximum 12 of curve Ev is the energy
bandgap 31.
The alignment of conduction band minimum and valence band maximum in direct bandgap materials alloWs radiative
transitions because an electron 40 has the same momentum
enhancement of phonon-electron interactions, With resulting improvement in optical, electronic, and/or heat transfer
properties in the material from Which the resonator is
constructed. Additionally, the present invention provides the ?rst example of a phonon resonator having a coupling length
that is shorter than the phonon mean free path. BeloW, We discuss the structural characteristics of the phonon resonator of the present invention, and the Ways in
65
value both before (i.e. in the conduction band) and after (i.e. in the valence band) the transition (i.e. before and after recombination With hole 50). Thus, the conservation of
momentum requirement for radiative transitions is satis?ed.