BD439/441

BD439/441
Medium Power Linear and Switching Applications
Complement to BD440, BD442 respectively

TO-126 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD439 : BD441 VCES Collector-Emitter Voltage : BD439 : BD441 Collector-Emitter Voltage : BD439 : BD441 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

1. Emitter

Value 60 80 60 80 60 80 5 4 7 1 36 150 - 65 ~ 150

Units V V V V V V V A A A W C C

VCEO

VEBO IC ICP IB PC TJ TSTG

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD439 : BD441 Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 : BD439 : BD441 Test Condition IC = 100mA, IB = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE =1V, IC = 500mA VCE = 1V, IC = 2A IC = 2A, IB = 0.2A VCE = 5V, IC = 10mA VCE = 1V, IC = 2A VCE = 1V, IC = 250mA 3 0.58 1.5 20 15 40 40 25 15 130 130 140 140 Min. 60 80 100 100 100 100 1 Typ. Max. Units V V A A A A mA

ICBO ICES IEBO hFE

VCE(sat) VBE(on) fT

* Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product

0.8

V V V MHz

* Pulse Test: PW=300s, duty Cycle=1.5% Pulsed

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

BD439/441

Typical Characteristics

1000

100

VCE(sat)[V], SATURATION VOLTAGE

VCE = 1V

IC = 10 IB

hFE, DC CURRENT GAIN

0.1

10

1 0.01

0.1

10

0.01 0.1

10

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

5.0

1000

VCE = 1V
4.5

IC[A], COLLECTOR CURRENT

4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0

CCBO(pF), COLLECTOR BASE CAPACITANCE

100

10

0.3

0.5

0.8

1.0

1.3

1.5

1.8

2.0

1 0.1

10

100

VBE[V], BASE-EMITTER VOLTAGE

VCB[V], COLLECTOR BASE VOLTAGE

Figure 3. Base-Emitter On Voltage

Figure 4. Collector-Base Capacitance

48

42

IC[A], COLLECTOR CURRENT

IC MAX. (Pulsed)
10 ms 1m DC s
10 0 s

PC[W], POWER DISSIPATION

10

1s 10 s

36

IC Max. (Continuous)

30

24

18

12

0.1 1 10

BD439 BD441
100

0 0 25 50
o

75

100

125

150

175

200

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

BD439/441

Package Demensions

TO-126
0.10

3.90

8.00 0.30

3.25 0.20

14.20MAX

3.20 0.10

11.00

0.20

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

0.30

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

13.06

16.10

0.20

0.50 0.05

+0.10

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

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2001 Fairchild Semiconductor Corporation

Rev. H2