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IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564 100V, P-CHANNEL
Product Summary
Part Number BVDSS RDS(on) IRFF9130 -100V 0.30 ID -6.5A
The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n n n n n
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling
Units A
W
W/C
V mJ A mJ V/ns
o
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1
04/20/01
IRFF9130
Min
-100 -2.0 2.5 14.7 1.0 2.0
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID = -4.1A VGS =-10V, ID =-6.5A VDS = VGS, ID = -250A VDS > -15V, IDS = -4.1A VDS= -80V, VGS=0V VDS = -80V VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-10V, ID = -6.5A VDS= -50V VDD = -50V, ID = -6.5A, VGS =-10V,RG =7.5
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
pF
Test Conditions
A
V nS C Tj = 25C, IS =-6.5A, VGS = 0V Tj = 25C, IF = -6.5A, di/dt -100A/s VDD -50V
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRFF9130
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IRFF9130
13 a& 13 a& bb
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IRFF9130
V DS VGS RG
RD
D.U.T.
+
V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
VGS 10%
90%
VDS
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IRFF9130
VDS
RG
D .U .T
IA S
VD D A D R IV E R
-20V VGS
tp
0.0 1
15V
IAS
QG
50K
-12V 12V
.2F
-10V
QGS VG QGD
VGS
.3F
D.U.T.
+VDS
-3mA
Charge
IG
ID
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IRFF9130
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -25V, starting TJ = 25C, Peak IL = -6.5A, VGS = -10V VDD -100V, TJ 150C Suggested RG = 7.5 Pulse width 300 s; Duty Cycle 2%
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01
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