STRH100N6FSY1 STRH100N6FSY3

N-channel 60V - 0.011 - TO-254AA rad-hard low gate charge STripFET Power MOSFET
Features
Type STRH100N6FSY1 STRH100N6FSY3

VDSS 60 V 60 V 3 1 TO-254AA 2

Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100 kRad TID SEL & SEGR with 34Mev/cm/mg LET ions Figure 1.

Internal schematic diagram

Applications

Satellite High reliability

Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Table 1. Device summary
Order codes STRH100N6FSY1 (1) STRH100N6FSY3
1. Mil temp range 2. Space flights parts (full ESCC flow screening)
(2)

Marking RH100N6FSY1 RH100N6FSY3

Package TO-254AA TO-254AA

Packaging Individual strip pack Individual strip pack

November 2007

Rev 5

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Contents

STRH100N6FSY1 - STRH100N6FSY3

Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Post-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics (curves) ............................. 7

3 4 5

Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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Electrical ratings

Electrical ratings
Table 2.
Symbol VDS VGS ID
(1)

Absolute maximum ratings (pre-irradiation)

Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC= 25 C Drain current (continuous) at TC= 100 C Drain current (pulsed) Total dissipation at TC= 25 C Peak diode recovery voltage slope Storage temperature Max. operating junction temperature Value 60 14 80 68 320 180 2.5 -55 to 150 150 Unit V V A A A W V/ns C C

ID (1) IDM (2) PTOT

(3)

dv/dt (4) Tstg Tj

1. This value is limited by package 2. Pulse width limited by safe operating area 3. This value is rated according to Rthj-case + Rthc-s 4. ISD 80 A, di/dt 600 A/s, VDD = 80 %V(BR)DSS

Table 3.
Symbol

Thermal data
Parameter Value 0.52 0.21 48 Unit C/W C/W C/W

Rthj-case Thermal resistance junction-case max Rthc-s Case-to-sink typ

Rthj-amb Thermal resistance junction-amb max

Table 4.
Symbol IAR EAS EAR(1)

Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25 C, Id= Iar, Vdd=32 V) Repetitive avalanche Value 40 1374 40 Unit A mJ mJ

1. Pulse number = 10; f= 10 KHz; D.C. = 50%

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Electrical characteristics

STRH100N6FSY1 - STRH100N6FSY3

Electrical characteristics
(TCASE = 25C unless otherwise specified)

2.1

Pre-irradiation
Table 5.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)

On/off states
Parameter Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance Test conditions 80% BVDss VGS = 14 V VGS = 0V, ID = 1 mA VDS =VGS, ID = 1 mA VGS = 12 V ID = 40 A 60 2 0.011 4.5 0.012 Min. Typ. Max. 10
100

Unit A nA V V

Table 6.
Symbol Ciss Coss Crss Qg Qgs Qgd

Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-to-source charge Gate-to-drain (Miller) charge Gate input resistance Test conditions Min. 5440 902.4 316 142.8 26.08 42.4 Typ. 6800 1128 395 178.5 32.6 53 Max. 8160 1353 474 214.2 39.12 63.6 Unit pF pF pF nC nC nC

VGS = 0, VDS = 25 V, f=1MHz

VDD = 30 V, ID = 40 A, VGS=12 V f=1MHz Gate DC Bias=0 Test signal level= 20 mV open drain

RG

1.6

2.4

Table 7.
Symbol td(on) tr td(off) tf

Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. 25.6 78.4 102 64 Typ. 32 98 128 80 Max 38.4 117.6 153.6 96 Unit ns ns ns ns

VDD = 30 V, ID = 40 A, RG = 4.7 , VGS = 12 V

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Electrical characteristics

Table 8.
Symbol ISD (1) ISDM (2) VSD (3) trr Qrr IRRM trr Qrr IRRM

Source drain diode

Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100 A/s VDD= 30 V, Tj = 25 C ISD = 80 A, di/dt = 100 A/s VDD= 30 V, Tj = 150 C 345 1.1 432 3.5 26 528 4.9 30.8 518 Test conditions Min. Typ. Max Unit 80 320 A A V ns C A ns C A

422

633

1. This value is limited by package 2. Pulse width limited by safe operating area 3. Pulsed: pulse duration = 300 s, duty cycle 1.5%

2.2

Post-irradiation

The ST rad-hard Power MOSFETs are tested to verify the radiation capability. The technology is extremely resistant to assurance well functioning of the device inside the radiation environments. Every manufacturing lot is tested for total ionizing dose. (@Tj=25C up to 100 Krad (a))

Table 9.
Symbol IDSS IGSS BVDSS VGS(th) RDS(on)

On/off states
Parameter Test conditions Min. Typ. Max. Unit 10
100

Zero gate voltage drain current 80% BVDss (VGS = 0) Gate body leakage current (VDS = 0) Drain-to-source breakdown voltage Gate threshold voltage Static drain-source on resistance VGS = 14 V VGS = 0, ID = 1 mA VDS =VGS, ID = 1 mA VGS = 12 V ID = 40 A 60 2

A nA V

4.5 0.011 0.012

a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.

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Electrical characteristics

STRH100N6FSY1 - STRH100N6FSY3

Table 10.
Ion Kr Xe

Single event effect, SOA(1)

Let (Mev/(mg/cm2)) 34 55.9 Energy (MeV) 316 459 Range (m) 43 43 VDS (V) @VGS0V 60 60

1. Rad-Hard Power MOSFETs have been characterized in heavy ion environment for single event effect (SEE). Single event effect characterization is illustrated

Figure 2.

Bias condition during radiation

Table 11.
Symbol ISD
(1) (2)

Source drain diode

Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD = 80 A, di/dt = 100 A/s VDD= 30 V, Tj = 25 C ISD = 80 A, di/dt = 100 A/s VDD= 30 V, Tj = 150 C 345 1.1 432 3.5 26 528 4.9 30.8 518 Test conditions Min. Typ. Max Unit 80 320 A A V ns C A ns C A

ISDM

VSD (3) trr Qrr IRRM trr Qrr IRRM

422

633

1. This value is limited by package 2. Pulse width limited by safe operating area 3. Pulsed: pulse duration = 300s, duty cycle 1.5%

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STRH100N6FSY1 - STRH100N6FSY3

Electrical characteristics

2.3
Figure 3.

Electrical characteristics (curves)

Safe operating area Figure 4. Thermal impedance

Figure 5.

Output characteristics

Figure 6.

Transfer characteristics

Figure 7.

Gate charge vs gate-source voltage Figure 8.

Capacitance variations

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Electrical characteristics Figure 9. Normalized BVDSS vs temperature

STRH100N6FSY1 - STRH100N6FSY3 Figure 10. Static drain-source on resistance

Figure 11. Normalized gate threshold voltage vs temperature

Figure 12. Normalized on resistance vs temperature

Figure 13. Source drain-diode forward characteristics

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Test circuit

Test circuit
Figure 14. Switching times test circuit for resistive load (1)

1. Max driver VGS slope = 1V/ns (no DUT)

Figure 15. Unclamped inductive load test circuit (single pulse and repetitive)

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Package mechanical data

STRH100N6FSY1 - STRH100N6FSY3

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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STRH100N6FSY1 - STRH100N6FSY3

Package mechanical data

Table 12.
DIM.

TO-254AA mechanical data

mm. MIN. TYP MAX. 13.84 13.84 20.32 6.60 1.27 3.78 17.40 6.86 0.89 3.81 3.81 12.95 3.05 0.71 1.0 1.65 0.065 14.50 0.510 0.120 0.025 0.040 1.14 0.035 0.150 0.150 0.570 MIN. 0.535 0.535 0.790 0.249 0.040 0.139 0.665 0.270 0.045 inch TYP. MAX. 0.545 0.545 0.80 0.260 0.050 0.149 0.685

A B C D E F G H I J K L M N R1 R2

13.59 13.59 20.07 6.32 1.02 3.53 16.89

Figure 16. Mechanical drawing

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Revision history

STRH100N6FSY1 - STRH100N6FSY3

Revision history
Table 13.
Date 03-Jul-2006 18-Dec-2006 15-Mar-2007 22-Oct-2007 15-Nov-2007

Document revision history

Revision 1 2 3 4 5 First release Figure 3. has been updated Complete version Note 2 on device summary has been updated Added figures: 2 and 15. Updated values on tables: 6, 7, 8 and 11 Minor text changes to improve readability Changes

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STRH100N6FSY1 - STRH100N6FSY3

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