FDPF12N35 350V N-Channel MOSFET

UniFET
FDPF12N35
350V N-Channel MOSFET Features
7.5A, 350V, RDS(on) = 0.38 @VGS = 10 V Low gate charge ( typical 18 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability

February 2006 TM

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

{
z

G { GD S

 
z z

TO-220F
FDPF Series

Absolute Maximum Ratings

Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)

Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)

FDPF12N35
350 7.5 4.5 30 30 335 7.5 5 4.5 50 0.35 -55 to +150 300

Unit
V A A A V mJ A mJ V/ns W W/C C C

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds

Thermal Characteristics
Symbol
RJC RJA

Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

Min.
---

Max.
2.5 62.5

Unit
C/W C/W

2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDPF12N35 Rev. A

FDPF12N35 350V N-Channel MOSFET

Package Marking and Ordering Information

Device Marking
FDPF12N35

Device
FDPF12N35

Package
TO-220F
TC = 25C unless otherwise noted

Reel Size
-

Tape Width
-

Quantity
50

Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:

Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 350V, VGS = 0V VDS = 280V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 3.75A VDS = 40V, ID = 3.75A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)

Min.
350 -----3.0 ------

Typ.
-0.35 -----0.32 13 855 135 15 30 180 35 60 18 5 8

Max Units
--1 10 100 -100 5.0 0.38 -1110 175 25 70 370 80 130 25 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC

On Characteristics

Dynamic Characteristics

Switching Characteristics VDD = 175V, ID = 12A RG = 25

(Note 4, 5)

------(Note 4, 5)

VDS = 280V, ID = 12A VGS = 10V

--

Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 7.5A VGS = 0V, IS = 12A dIF/dt =100A/s
(Note 4)

------

---270 2.3

7.5 30 1.4 ---

A A V ns C

1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 7.5A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 7.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics

FDPF12N35 Rev. A

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FDPF12N35 350V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics
10
2

Figure 2. Transfer Characteristics

10

ID, Drain Current [A]

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :

10

10

150 C 25 C
o

Notes : 1. 250 s Pulse Test 2. TC = 25

-55 C
Notes : 1. VDS = 40V 2. 250 s Pulse Test

10

-1

10

-1

10

10

10

10

12

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
10
2

1.2

RDS(ON) [ ], Drain-Source On-Resistance

1.0

0.8

VGS = 10V

IDR, Reverse Drain Current [A]

10

0.6

150 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test

0.4

VGS = 20V

0.2 0 5 10 15 20 25

Note : TJ = 25

30

35

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics

12
1800 1600 1400
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

Figure 6. Gate Charge Characteristics

VGS, Gate-Source Voltage [V]

10

VDS = 70V VDS = 175V VDS = 280V

Coss Ciss

Capacitances [pF]

1200 1000 800 600 400 200 0 -1 10

Crss

Note ; 1. VGS = 0 V 2. f = 1 MHz

2
Note : ID = 12A

10

10

10

12

14

16

18

20

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

FDPF12N35 Rev. A

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FDPF12N35 350V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation vs. Temperature
1.2

Figure 8. On-Resistance Variation vs. Temperature

3.0

BVDSS, (Normalized) Drain-Source Breakdown Voltage

1.1

RDS(ON), (Normalized) Drain-Source On-Resistance

2.5

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 3.75 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

8

10

100 s

ID, Drain Current [A]

10

1 ms 10 ms 100 ms
Operation in This Area is Limited by R DS(on)

10

DC

ID, Drain Current [A]

10

-1

Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o

10

-2

10

10

10

0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 11. Transient Thermal Response Curve

Z JC (t), Thermal Response

10

D = 0 .5 0 .2 0 .1 0 .0 5
N o te s : 1 . Z JC ( t) = 2 .5 / W M a x . 2 . D u t y F a c to r , D = t 1 /t 2 3 . T JM - T C = P D M * Z JC ( t)

10

-1

0 .0 2 0 .0 1 s in g le p u ls e
10
-2

PDM t1 t2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]

FDPF12N35 Rev. A

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FDPF12N35 350V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

5 0 K 1 2 V 2 0 0 n F 3 0 0 n F

S a m e T y p e a s D U T V D S

V G S 1 0 V Q g s Q g

V G S

Q g d

D U T
3 m A

C h a r g e

Resistive Switching Test Circuit & Waveforms

V D S R G V G S

R L V D D

V D S

9 0 %

1 0 V

D U T

V G S

1 0 %

t d ( o n )

t r t o n

t d ( o f f ) t o f f

t f

Unclamped Inductive Switching Test Circuit & Waveforms

L V D S I D R G 1 0 V
tp

B V D S S 1 2-L E = I A S A S 2 V B V D S S D D B V D S S I A S V D D I ( t ) D V D D
tp

D U T

V ( t ) D S T i m e

FDPF12N35 Rev. A

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FDPF12N35 350V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ V
DS

_ I

SD

L D r iv e r R
G

S am e T ype as DUT

DD

GS

d v / d t c o n t r o lle d b y R G I S D c o n t r o lle d b y p u ls e p e r io d

V GS ( D r iv e r )

G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d

10V

IF M , B o d y D io d e F o r w a r d C u r r e n t

I SD ( DUT ) IR M

d i/d t

B o d y D io d e R e v e r s e C u r r e n t

V DS ( DUT )

B o d y D io d e R e c o v e r y d v / d t

SD

DD

B o d y D io d e F o r w a r d V o lta g e D r o p

FDPF12N35 Rev. A

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FDPF12N35 350V N-Channel MOSFET

Mechanical Dimensions

TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)

6.68 0.20

15.80 0.20

(1.00x45)

MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0

0.35 0.10 2.54TYP [2.54 0.20]

#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10

2.76 0.20

9.40 0.20

Dimensions in Millimeters

FDPF12N35 Rev. A

15.87 0.20
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FDPF12N35 350V N-Channel MOSFET

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

8 FDPF12N35 Rev. A

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