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Features
3.6A, 200V rDS(ON) = 1.500 Temperature Compensating PSPICE Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards
Symbol
D
Ordering Information
PART NUMBER IRFR9220 IRFU9220 PACKAGE TO-252AA TO-251AA BRAND IF9220 IF9220
G
NOTE: When ordering use the entire part number. Add the sufx 9A to obtain the TO-252AA variant in tape and reel, e.g., IRFR92209A.
Packaging
JEDEC TO-251AA
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) DRAIN (FLANGE)
JEDEC TO-252AA
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. PSPICE is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRFR9220, IRFU9220
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFR9220, IRFU9220 -200 -200 20 3.6 Refer to Peak Current Curve Refer to UIS Curve 42 0.33 -55 to 150 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
W W/oC oC
oC oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qgd Qgs CISS COSS CRSS RJC RJA VGS = 0 to -10V VDD = -160V, ID = 3.9A, RL = 41 IG(REF) = 1.45mA TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC VGS = 20V ID = 2.2A, VGS = -10V (Figure 9) VDD = -100V, ID = 3.9A, RL = 24, VGS = -10V, RGS = 18 (Figures 13, 16, 17) MIN -200 -2.0 TYP 8.8 27 7.3 19 20 11 3.3 550 110 33 MAX -4.0 -25 -250 100 1.500 50 50 3.00 100 UNITS V V A A nA W ns ns ns ns ns ns nC nC nC pF pF pF
oC/W oC/W
Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current
Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate to Drain Charge Gate to Source Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
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-4
-2
-1
25
50
75
100
125
150
10
0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 10-5 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 100 101
10-4
-20
-50
FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: VGS = -20V I = I 150 T C ---------------------- 25 125
1ms -1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED -0.1 -1 VDSS MAX = -200V -500
10ms 100ms DC
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION -1 10-5 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s)
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-5 VGS = -8V -4 VGS = -10V VGS = -20V -3 VGS = -6V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = -5V VGS = -4.5V 0 -1.5 -3.0 -4.5 -6.0 -7.5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = -7V
STARTING TJ = 25oC
STARTING TJ = 150oC
-2
If R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) If R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] -1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms)
-1
-8
2.5 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = -15V -55oC
2.0
-6
25oC
1.5
-4
1.0
-2
150oC
0.5
0 -80
-40
40
80
120
160
2.0
NORMALIZED GATE
1.5
2.0
ID = 250A
THRESHOLD VOLTAGE
1.5
1.0
1.0
0.5
0.5
0 -80
-40
40
80
120
160
0 -80
-40
40
80
120
160
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-160 RL = 51 IG(REF) = -1.45mA VGS = -10V 0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS -40
-8.0
-120
-6.0
-80
-4.0
-2.0
0 20
IG(REF) IG(ACT)
t, TIME (s)
80
IG(REF) IG(ACT)
0.0
NOTE: Refer to Application Notes AN7254 and AN7260. FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
VDD VDD
0V VGS
RL
DUT VGS RG
VDD
+
VDS VGS 0
90%
90%
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VDD = BVDSS
VDD = BVDSS
-10.0
(Continued)
-VDS (ISOLATED SUPPLY)
0 VDS
DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 Ig(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT VDD Qgd
VGS
Qg(TOT)
Ig(REF)
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REV 9/6/94
RLDRAIN DPLCAP 5 DRAIN 2 LDRAIN RSCL2 RSCL1 + 51 5 51 6 8 VTO + 16 21 MOS1 RIN CIN 8 RSOURCE 7 RLSOURCE 3 SOURCE LSOURCE S1A 12 13 8 S1B CA + 6 EGS 8 + EDS 14 5 8 13 S2A 14 13 S2B CB IT 19 VBAT + 15 17 RBREAK 18 ESCL 50 RDRAIN 11 + EBREAK 17 18 MOS2 DBODY DBREAK
DBODY 5 7 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 6 DPLCAPMOD EBREAK 7 11 17 18 -244.4 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 5 10 8 6 1 EVTO 20 6 8 18 1
RLGATE
ESG +
GATE 1 LGATE
RGATE 9
EVTO 20 18 8
MOS1 16 6 8 8 MOSMOD M=0.99 MOS2 16 21 8 8 MOSMOD M=0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 1.194 RGATE 9 20 2.17 RIN 6 8 1e9 RLDRAIN 2 5 10 RLGATE 1 9 26.09 RLSOURCE 3 7 26.09 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 90.1e-3 RVTO 18 19 RVTOMOD 1 S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 -0.77 ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/4.6,6))} .MODEL DBDMOD D (IS=2.56e-14 RS=8.09e-2 TRS1=-2.45e-3 TRS2=-1.33e-5 CJO=4.21e-10 TT=1.17e-7) .MODEL DBKMOD D (RS=5.07 TRS1=-1.05e-3 TRS2=1.28e-5) .MODEL DPLCAPMOD D (CJO=170e-12 IS=1e-30 N=10) .MODEL MOSMOD PMOS (VTO=-3.58 KP=1.38 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD RES (TC1=1.1e-3 TC2=-2.73e-6) .MODEL RDSMOD RES (TC1=6.95e-3 TC2=2.23e-5) .MODEL RSCLMOD RES (TC1=2.40e-3 TC2=-1.5e-5) .MODEL RVTOMOD RES (TC1=-3.27e-3 TC2=-1.33e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.29 VOFF=3.29) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.29 VOFF=5.29) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.1 VOFF=-4.9) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.9 VOFF=0.1)
.ENDS
RVTO
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley.
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IRFR9220, IRFU9220
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