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Oscillators

Aleksandar Tasic Electronics Research Laboratory Delft University of Technology

a.tasic@tudelft.nl 2006

UMTS VCO Requirements


VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption
Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors

Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW
Values
BiCMOS 4 50GHz available available

a.tasic@tudelft.nl 2006

Outline
LC Oscillators Oscillation Signal Steady-State Amplitude Interpretation of Noise in Oscillators Linear Phase-Noise Model Spectral Analysis of Phase Noise Noise Suppression of Bias Current Sources LC-Oscillator Design Procedure
a.tasic@tudelft.nl 2006
3

LC Oscillators

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Negative Resistance Oscillator


1
V CC C
V

L, RL UT

LCV / 2 resonating LC tank

CV

gM
Q1 Q2

active pair

I TAIL

biasing current source


QCS

QCS

a.tasic@tudelft.nl 2006

Negative Resistance Oscillator - Simplified Model


gMV + V -

-gM GTK C L

oscillation condition
gM GTK gM
1 / LC

gm / 2 C CV / 2
6

oscillation frequency
0

a.tasic@tudelft.nl 2006

LC Tank
C 2R C L RL

GTK

C L

tank conductance
GTK RL ( 0 L) 2 2RC (
0

C)

GTK

1 0 L QL

1 QC

quality factors
QL
0

RL

QC

1 0CV RC
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Steady-State Oscillation Signal Amplitude


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Sub-Outline

Differential Pair Characteristic Large-Signal Conductance Steady-State Oscillation Signal Amplitude

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Amplitude Stabilization
Amplitude regulator
amplitude control mechanism

Nonlinear amplifier
well defined nonlinearity timing reference loss compensation

ALC

loop-gain control
y(x) y(x)

Resonator

Resonator
10

a.tasic@tudelft.nl 2006

Differential Characteristic
IOUT

I OUT
I0
Q1

VIN

Q2

VIN

-I0
1/f0 1/f0

2I 0

iOUT ( t )

I 0 tanh

x cos t 2

vIN ( t ) V1 cos t

current harmonic content


iOUT ( t ) I1 cos t I 3 cos 3 t I 5 cos 5 t ... I 0
n

x V1 / VT

V1

VT

a2 n 1 cos 2n 1 t

In( x )

I 0 an ( x )

an ( x )

tanh

x cos 2

cos( n )d

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Large Signal (Trans)Conductance


GM 1 ( x )
GM 1 ( x )

I1 V1
gm

I 0 VT I1 VT V1 I 0
2g M a1 ( x) x

GM1(x)/gM 1

1 I1 x I0

0.5

GM 1 ( x) / g M

a1 ( x) x
1 10 x

steady state oscillation condition


GM 1 V1 H 0 j
GM 1 V1 gM gM H0 j

1
1 1 smallsignalloop gain
12

large signalfundamental (trans)conductance smallsignaltrans(conductance)


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Current Harmonic Components


output current
iOUT (t ) I1 cos t I 3 cos 3 t I 5 cos 5 t ... I0
n 0

a 2 n 1 cos 2n 1 t

close to square wave if V1 >> VT harmonics of the square-wave signal current

In

4I 0 n

2 I TAIL n

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Steady-State Oscillation Amplitude


large signal conductance and steady state oscillation condition

GM 1 (V1 )

I1 V1

I1 I TAIL

I TAIL V1

2 I TAIL V1

GM 1 (V1 ) gM

1 k

small signal loop gain (k)

k
2

RTK g M

steady state fundamental amplitude


V1 I TAIL RTK tank resistance current fundamental
a.tasic@tudelft.nl 2006
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voltage fundamental

So Far
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption

Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW

Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors

Values
BiCMOS 4 50GHz available available

a.tasic@tudelft.nl 2006

15

Interpretation of Noise in Oscillators


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Sub-Outline

Signal Phasor Description Signal Spectral Description Phase-Noise Definition Phase-Noise Specification

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Bennett Noise Interpretation


White noise spectrum (power spectral density)
N( f ) n(t ) ak cos A t

One noise component (time domain)


k k

ak known amplitude (
k k

2A)

known angular frequency random phase (constant and uniform)

a.tasic@tudelft.nl 2006

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Oscillation Signal Description


Ideal vs. actual oscillation signal V0cos 0t vs. V0[1+a(t)]cos[ t+ (t)]
a(t) amplitude modulated component

(t) phase modulated component

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Oscillation Signal Phasor Description


v(t )
n (t )

[1 a(t )] cos

(t )

cos
n( t)

a(t ) cos

(t ) sin

(t )

a(t)

v(t)

a (t ) in-phase component (AM) can be removed (t ) quadrature-phase component (PM) is unavoidable


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Oscillation Signal Phasor Description


v(t )
n (t )

[1 a(t )] cos

(t )
n( t)

cos

a(t ) cos

(t ) sin

(t )

a(t)

amplitude control mechanism

v(t)

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Oscillation Signal Spectral Description


oscillating signal and noise component
AM

f0

f+f0

= +
PM

amplitude modulated component phase modulated component

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Oscillation Signal Spectral Description


oscillating signal and noise component
f0 f+f0

=
AM

+
PM

amplitude control mechanism phase modulated component

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Phase Spectrum vs. Oscillation Signal Spectrum


v(t ) A cos A cos
phase spectrum
(f)
0

t t

(t ) A
k

A cos sin
k

t
k

sin
0

sin

oscillation signal spectrum V( f ) ( f f0 ) ( f

f0 )

(f

f0 )

(f

f0 )

-f0
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f0
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Phase Noise Definition


ratio of the noise power in a 1Hz bandwidth at frequency f0+ f and the carrier power

L(

)=10log[Pside-band(

0+

)/Pcarrier (

0)]

[dBc/Hz]

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Why is Phase Noise Important?


Reciprocal mixing
desired signal covered by the phase-noise skirt of the interferer

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Phase Noise Specification


Typical blocking profile

Specra of downconverted signals


blocker

desired signal (MDS)


S/N

S/N=SMDS-NxBW

L =N/SBLOCK

BW

L(

f)=SMDS-SBLOCK-10logBW-S/N [dBc/Hz]
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Linear Phase-Noise Model


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Sub-Outline
Generic Linear Phase-Noise Model

Circuit-Specific Linear Phase-Noise Model

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Generic Linear Phase-Noise Model - Outline


Linear Oscillator Model
LC-Tank noise active part noise

(Phase) Noise Factor Phase-Noise Properties

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Linear Oscillator Model


transconductor noise
-gM GTK C L

LC-tank noise no tail-current source noise

LC-tank impedance (noise shaping)


Z( Z(
0

LC-tank quality factor


Q
2 0

) )
2

j 2

L
0

/ 1
2

j 2 0C
2 0 2

1 0 LGTK
0

2 RTK

4G TK Q

4Q

C
31

GTK

a.tasic@tudelft.nl 2006

LC-Tank Noise

-gM I(GTK ) GTK C L

tank resistance noise (RTK=1/GTK)


I
2 TK

4KTGTK

tank contribution to the equivalent voltage noise spectral density


V
2 TK

2 TK

Z(

GTK KT ( 0C ) 2

2 0

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Active Part Noise


I(g M ) -gM I(GTK ) GTK C L

active part contribution to the equivalent voltage noise spectral density


V
2 AP

GTK KT A 2 ( 0C )

2 0

active part noise factor A


excess negative conductance additional noise of the active devices ideally A=1 (i.e., gM=GTK, and no excess noise from the active part)
a.tasic@tudelft.nl 2006
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Phase Noise
total voltage noise spectral density
VN,TOT IN,TOT

2 TOT

2 TK

2 AP

2 TOT

GTK KT F 2 ( 0C )

2 0

oscillator noise factor F=1+A resulting phase noise


2 TOT 2 0

L(
L(

1V 2 VS2 / 2
2 FkT PS

KT

1 F 2 Q VS GTK
2

2Q
a.tasic@tudelft.nl 2006
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Phase Noise Properties


Leesons phase noise model
2

L(

2 FkT PS

2Q

inversely proportional to tank quality factor (square) inversely proportional to signal power

-20dB/decade slope at mid frequencies (~MHz)


directly proportional to oscillation frequency (square)

a.tasic@tudelft.nl 2006

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Phase Noise Plot


1/f noise

Thermal, shot noise

Noise floor due to active elements or instrumentation

Leesons modification to capture 1/f and flat noise part


2

L(

2 FkT PS

2Q

1/ f

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Circuit-Specific Linear PhaseNoise Model - Outline


Spectral Noise Analysis
oscillation condition LC-tank, gm-cell, current source noise (phase) noise factor

Circuit Noise Analysis


LC-tank, gm-cell, current source noise (phase) noise factor

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a.tasic@tudelft.nl 2006

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Spectral Analysis of Noise in Switching LC-Oscillators


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Sub-Outline
Duty Cycle of Small-Signal gm-cell Gain Oscillation Condition LC-Tank Noise gm-cell Noise Tail-Current Source Noise (Phase) Noise Factor Bipolar VCO (Phase) Noise Factor CMOS VCO Bipolar vs. CMOS VCO
a.tasic@tudelft.nl 2006
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Is it Indeed so Simple?
IGT
L CV CV

LC-tank noise

IC

VB
Q1

VB
Q2

IC

IB

IB

transconductor noise
tail-current source noise

Q CS

ICS

noise from the transistors Q1 and Q2 is switched ON and OFF


noise from current source QCS is modulated by oscillator switching
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VCO Noise Sources


LC-tank noise 2 iN (GTK ) 2 KTGTK base-resistance thermal noise 2 vN ( rB ) 2 KTrB collector-current shot noise
2 iN ( IC )

qI C
qI B

2 KTg m / 2
2 KTgm / 2
gm,CS 2 ( rB ,CS gm ,CS )2 1
F

base-current shot noise


2 iN (IB )

tail-current source output noise


i ( I TCS )
2 N

2 KT

1 2rB ,CS gm,CS

(
T

)2

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Active Part - Base Voltage Noise


small signal gain in presence of a large signal
IOUT dIOUT dVIN g(t) VIN
CV L CV

gM

VB
Q1

VB
Q2

1/2f0

Q CS

Q CS

1/f 0
c0

Fourier domain even harmonics


c2 c4

c' 2 k

1 T

T /2

g ' (t )e
T /2

j 2k

0t

dt

Fourier domain convolution = spectra shifting


STK ,VB ( f )
k

c' k SVB ( f

kf0 )
43

a.tasic@tudelft.nl 2006

Active Part - Base Current Noise


base current (switching) transfer function
I g''( ) : 2
2 B
L CV CV

1.41
Q1 Q2

1
1/2 f0

IB

IB

Q CS

Q CS

Fourier domain even harmonics


c' ' 2 k 1 T
T /2

g ' ' (t )e
T /2

j 2k

0t

dt

Fourier domain convolution = spectra shifting


STK , IB ( f )
k

c' 'k S IB ( f

kf0 )

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Active Part - Collector Current Noise


collector current (switching) transfer function
CV L CV

IC g'''( ) : 2

1
IC
Q1

0
1/2 f0

Q2

IC

Fourier domain even harmonics


c' ' ' 2 k 1 T
T /2

Q CS

Q CS

g ' ' ' (t )e


T /2

j 2k

0t

dt

Fourier domain convolution = spectra shifting


STK , IC ( f )
k

c' ' ' k S IC ( f

kf0 )

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Active Part Noise Folding


shifting of active part noise spectral components
STK , AP ( f 0
f0 2f0 3f0
2 c '0 SVB ( f 0 2 f ) c ''0 S IB ( f 0 2 f ) c '''0 S IC ( f 0

f) f) f) f)

cAP,0

cAP,2 cAP,4

c '2 2 SVB ( f 0 c '2 2 SVB (3 f 0 ...

2 f ) c ''2 S IB ( f 0

2 f ) c '''2 S IC ( f 0

f ) c ''2 2 S IB (3 f 0

f ) c '''2 2 S IC (3 f 0

active part noise at odd multiples of the resonant frequency is transformed into the LC-tank noise at the resonant frequency
STK , AP ( f 0 f)
2 c AP ,0

2
k

c AP , 2 k

S AP

...

S AP

S AP ( f 0

f)

S AP (3 f 0
46

f ) ...

a.tasic@tudelft.nl 2006

Tail Current Noise


oscillator switching model
IOUT
Q1 L CV CV

Q2

VIN

1/f0
1/f 0

Q CS

Q CS

ICS

Fourier domain odd harmonics


a1 a3

a 2k 1

1 T

T/2

e
T/2

j ( 2 k 1 ) 0t

dt

Fourier domain convolution = spectra shifting


STK ,CS ( f )
k

ak S CS ( f

kf0 )
47

a.tasic@tudelft.nl 2006

Tail Current Noise Folding


shifting of tail-current source noise spectral components
f0 X c1 a 2f0 3f0

STK ,CS ( f 0
ac3
2 a3 S CS (2 f 0

f)

a12 S CS ( f ) a12 S CS (2 f 0
2 f ) a3 S CS (4 f 0

f)

f) f ) ...

2 a5 S CS (4 f 0

2 f ) a5 S CS (6 f 0

tail current noise at even multiples of the resonant frequency is transformed into the LC-tank noise at resonant frequency
STK ,CS ( f 0 f) 2
k

a2 k

2 1

SCS

SCS

SCS (2 f 0

f)

SCS (4 f 0
48

f ) ...

a.tasic@tudelft.nl 2006

Total Noise
total power spectral density across the LC tank
STOT STK STK ,CS STK , AP

total voltage noise density across the LC tank


V
2 TOT

Z(

2 TK k

c' 2 k V

2 B k

c' ' 2 k I

2 B k

c' ' ' 2 k I

2 C k

a2 k

2 1

2 CS

near linear operation (Q1 and Q2 always ON; gM=GTK)


V
2 TOT

Z(

2 TK

IC 2

IB

2 2V GTK

2 B

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49

Other Noise Analysis Methods


Linear frequency domain analysis Craninckx noise superimposed on the carrier

Linear time varying analysis (Impulse Sensitivity Function) Hajimiri


noise added to phase Nonlinear analysis Samori noise added to phase

a.tasic@tudelft.nl 2006

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So Far
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption

Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW

Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors

Values
BiCMOS 4 50GHz available available

a.tasic@tudelft.nl 2006

51

Suppression of Noise in Oscillators Tail-Current Source


52

a.tasic@tudelft.nl 2006

Outline
Contribution of Tail-Current Source Noise to Phase Noise of LC-Oscillators Techniques for Reduction of Tail-Current Source Noise Analysis of Tail-Current Source Noise Bias Noise Suppression - Design Example

a.tasic@tudelft.nl 2006

VCO Noise Contributions


IGT
L CV CV

LC-tank noise ~ 1

IC

VB
Q1

VB
CB CA CB CA Q2

IC

IB

IB

transconductor noise ~ 0.5+ck tail-current source noise ~ (0.5+ck)k (k=loop gain)


54

Q CS

ICS

TCS noise >> LC-tank noise + gm-cell noise (k>>1)


a.tasic@tudelft.nl 2006

VCO Phase-Noise
noise power(LC - tank,- gm cell, current source) PN = signal power (~k2)

TCS noise >> LC-tank noise + gm-cell noise VCO noise power ~ 1 or ck2 phase noise ~ 1/k2 or const TCS noise suppression with RID
VCO noise power ~ 1 or ck

phase noise ~ 1/k2 or 1/k


a.tasic@tudelft.nl 2006
55

Bias Noise Reduction Techniques


resistive degeneration
ITAIL V IN VIN

inductive degeneration
ITAIL

filtering?
ITAIL V IN

+ R D

CD

com nemitr(CE) resonatiducvedgneratio(RID) resitvdegnratio(RD)

LD

high supply required

large area if integrated noise injection if discrete


a.tasic@tudelft.nl 2006

transconductor noise always ON reduced output impedance


56

Resonant-Inductive Degeneration (RID)


high TCS noise suppression no voltage headroom I
TAIL

integration

VIN
C LRID

integrated degenerative inductor (LRID) matched with base-emitter capacitance (C ) at 2f0


a.tasic@tudelft.nl 2006
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Pros & Cons of RID


good suppression of high frequency TCS noise (2f0) low voltage operation small chip area (vs. discrete solutions) TCS DC noise upconversion large area (vs. resistive degeneration) poorer noise suppression at high supplies (vs. resistive degeneration)
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Tail-Current Source with Resonant-Inductive Degeneration


ITAIL VIN
C

LRID matched to C at 2f0 rB noise contribution reduced

transconductance gain small at resonance series resonance common-base like configuration (gain of 1) parallel resonance emitter open at resonance (IC floats)
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L IB noise contribution small RID IC

IB

IC noise contribution removed


Circuit Diagram for Noise Transfer Functions


B r B V B L RID IB C C
- )g (V B V E m

I C

I OUT

IC to IOUT: VB short, IB open IB to IOUT: VB short, IC open VB to IOUT: IC open, IB open


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Tail-Current Source Noise Contributions


I OUT VB
I OUT IB (f ) gm

(f)
T

LRID

1 j LRID 1/ j C
gm

f gm ( ) fT

series resonance
1 1/ j LRID f 2 1 rB g m ( ) fT
1 1/ j LRID 1 f 2 1 rB g m ( ) fT

C rB LRID

j C
gm

parallel resonance
I OUT IC (f) 1 gm C rB LRID 0 j C

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parallel resonance 61

TCS w/ RID vs. TCS w/o RID


TCS noise with degeneration

2 CS , RID

gm fT 2 1 4kT 0 ( ) 2 2 f0 F

2rB gm

2 f0 fT

TCS noise without degeneration 2 gm fT 2 1 I CS 4kT 1 0( ) 2 2 f0 F

2rB g m

more than a factor (fT/2f0)2 noise reduction after RID

2 CS , RID

2 CS

2 f0 fT

for (fT/2f0)=10, a factor of 100 reduction a.tasic@tudelft.nl 2006

62

5.7GHzband VCO
buffer

RID

LC-tank

-gm -cell

5 metals active area 0.1mm2 2 LRID=2.6nH, a.tasic@tudelft.nl 7-turns, 0.01mm 2006

buffer

63

Phase Noise (w/ RID vs. w/o RID)

to ground

to ground

to TCS transistors

to ground

TCS noise into phase noise: w/ RID 9%, w/o RID 77% 64
a.tasic@tudelft.nl 2006

Phase Noise (w/ RID vs. w/o RID)

without RID with RID

6dB phase-noise improvement with RID


-112dBc/Hz @1MHz from 5.7GHz @ 4.8mA&2.2V 65 a.tasic@tudelft.nl 2006

RID Conclusions

resonant-inductive degeneration for a 4-fold phase noise improvement of a 5.7GHz VCO no voltage headroom required small inductance for resonance at 2f0 cost-effective implementation in multi-layer technologies manifold oscillator phase-noise improvement
a.tasic@tudelft.nl 2006
66

LC-VCO Design Procedure


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67

Sub-Outline
VCO Specifications LC-Tank Design How to Choose LC-Tank Inductance How to Choose LC-Tank Varactor Active-Part Design

a.tasic@tudelft.nl 2006

68

UMTS VCO
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption

Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW

Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors

Values
BiCMOS 4 50GHz available available

WCDMA Specs
Receiving Band (GHz) Channel Spacing (MHz) Multiplex / Modulation MDSeff (dBm) SNR (dB) / BER Processing Gain (dB) Tx-Rx Isolation (dB) Blocker @ 8MHz (dB)

Value 2.11-2.17 5 (3.84) FDD / QPSK -99 7 / 1E-3 25 50 -46

L (8MHz)=-99-(-46)-10log(3.84e6)-7=-129dBc/Hz
a.tasic@tudelft.nl 2006

69

Series vs. Parallel Resonator


frequency f0=2.1GHz desired signal power P=10mW
RS L C

QL=20

RTK

L=3nH, C=1.9pF, RS=2 fundamental current and voltage i=100mA, v=0.2V

L=3nH, C=1.9pF, RTK=800 fundamental current and voltage i=5mA, v=4V

very large current

moderate current and voltage


realistic choice
a.tasic@tudelft.nl 2006
70

Negative Resistance Oscillator


V CC C
V

1
0

L, RL UT

LC

resonating LC tank

CV

CV / 2

Q1

gm / 2
Q2

active part

I TAIL

IC
QCS

IT 2

biasing current source

QCS

a.tasic@tudelft.nl 2006

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LC Tank Design
oscillation frequency
f0 1 2 LC
C CV / 2

determine L and C

tuning range
f MAX f MIN CV ,MAX CV ,MIN C PAR 2 CV ,MIN C 1 2 PAR CV ,MIN
2

parasitics impose larger capacitive tuning range

CV ,MAX CV ,MIN

f MAX f MIN

f MAX f MIN

C PAR determine CMAX and CMIN CV ,MIN

a.tasic@tudelft.nl 2006

72

How to Choose L?
tank conductance
GTK 1 1 0 L QL 1 QC

phase noise
L( )
KT RL 2 RC VS2
2

choice of L
larger L => larger QL
larger L => lower GTK

larger L => larger RL


larger L => poorer L

larger L => lower power consumption larger L => lower fRES, fQ-PEAK larger L => lower tuning range

choose for the largest L having peak Q close to the


operating frequency
a.tasic@tudelft.nl 2006
73

How to Choose C?
tank conductance
GTK RL ( 0 L )2 2 RC (
0

phase noise
2

C)

L(

KT

RL

2 RC VS2

choice of C
larger C => lower Q larger C => larger GTK larger C => lower RC larger C => slightly better

larger C => larger power consumption


larger C => larger tuning range

choose for C providing not more than the required


frequency tuning range
a.tasic@tudelft.nl 2006
74

Active Part Design


chosen LC tank parameters determine losses to be compensated
GTK

cross-coupled pair conductance


gM gm / 2
oscillation condition gM>GTK determines the very

RL ( 0 L )2

2 RC (

C )2

minimum compensating active-devices current


IC g mVT 2GTKVT RL 2 ( 0 L )2 2 RC (
2 C ) VT 0

choose for the transistors having enough fT (~10f0) for


the determined collector current
a.tasic@tudelft.nl 2006
75

What About Phase Noise?


there is nothing better than the best LC-tank

the best LC tank chosen determines power consumption and accordingly active devices operating current
shot noise is directly determined by operating current, i.e., LC tank the larger the transistor the lower the base resistance thermal noise (but more parasitics) choose for as large transistors as possible having
enough fT (~10f0) for the determined collector current
a.tasic@tudelft.nl 2006
76

Tail Current Source


Tail current noise around even multiples of the oscillating frequency is transformed into the phase noise of the VCO Tail current noise contribution larger than all other contributions together Reducing the output noise power of the current source, its contribution to the phase noise is reduced as well
emitter degeneration reduces the tailcurrent source noise transfer functions resistive degeneration effective at all frequencies but requires voltage headroom inductive degeneration effective in narrow frequency band but requires no voltage headroom
a.tasic@tudelft.nl 2006

I CS, RID

V B,CS
QCS

IB,CS

IC,CS

ZD
77

So Far
VCO design parameters
Oscillating frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption

Design requirement
2.1GHz 400MHz 0.7V -110dBc@1MHz 3V 10mW

Technology parameters
Technology Number of metals Transit frequency MIM capacitors Varactors

Values
BiCMOS 4 50GHz available available

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VCO Design Example Measurements


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Post-Design Flow
Oscillator Design Layout Oscillator Chip Packaging Printed Circuit Board Design

Measurement Setup
Interpretation of Results

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VCO Chip Microphotograph

LRID
-gM C L

LRID

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Packaged VCO IC
VCO chip bondwire

bondpad

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Packaged VCO IC on PCB


SMD transformer

SMD resistor

VCO IC package

SMD inductor SMD capacitor

bias choke

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Measurement Fixture
I/O connectors transformer bias filtering

VCO IC

bias filtering

package
PCB

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Measurement System
VCC +
+

VVCO + + UTUNE IBUFFER VVCO ITAIL VCC

VCC-XF

Spectrum analyzer

LO

test fixture

IBUFFER
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Chip and Measurement Equipment Interface

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Measured Signal Spectrum

signal power

signal frequency

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Measured Frequency Tuning Range


fLOW=1.8GHz fUP=2.4GHz f=600MHz VTUNE=3V

2,5 2,4
Oscillating frequency [GHz]

2,3 2,2 2,1 2 1,9 1,8 1,7 0 0,5 1

VCC=3V

1,5 Tuning voltage VT [V]

2,5

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Measured Phase Noise

PN(1MHz)=-110dBc@3mW

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Measured VCO Performance

VCO design parameters Central frequency Tuning range Voltage swing Phase noise Supply voltage Power consumption

Measurement Results 2.1GHz 600MHz 0.7V -110dBc@1MHz 3V 3mW

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Poor PCB Design


number of spurs from cables and supply necessity for filtering on supply lines

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Conclusions

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So far
LC Oscillators Oscillation Signal Steady-State Amplitude Interpretation of Noise in Oscillators Linear Phase-Noise Model Spectral Analysis of Phase Noise Noise Suppression of Bias Current Source LC-Oscillator Design Procedure
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