PD- 91381A

IRFL4105
HEXFET Power MOSFET
l l l l l l

Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated

VDSS = 55V RDS(on) = 0.045

ID = 3.7A
S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

S O T -22 3

Absolute Maximum Ratings

Parameter
ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range

Max.
5.2 3.7 3.0 30 2.1 1.0 8.3 20 110 3.7 0.10 5.0 -55 to + 150

Units
A

W W
mW/C

V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)**

Typ.
90 50

Max.
120 60

Units
C/W

* When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices.

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1
1/14/99

IRFL4105
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min. 55 2.0 3.8

Typ. 0.058 23 3.4 9.8 7.1 12 19 12 660 230 99

Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.045 VGS = 10V, ID = 3.7A 4.0 V VDS = VGS, ID = 250A S VDS = 25V, ID = 1.9A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 35 ID = 3.7A 5.1 nC VDS = 44V 15 VGS = 10V, See Fig. 6 and 13 VDD = 28V ID = 3.7A ns RG = 6.0 RD = 7.5, See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD trr Qrr

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge

Min. Typ. Max. Units 55 120 1.3 A 30 1.3 82 170 V ns nC

Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 3.7A, VGS = 0V TJ = 25C, I F = 3.7A di/dt = 100A/s

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD 3.7A, di/dt 110A/s, VDD V(BR)DSS,

TJ 150C

VDD = 25V, starting TJ = 25C, L = 16mH

RG = 25, IAS = 3.7A. (See Figure 12)

Pulse width 300s; duty cycle 2%.

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IRFL4105
100
TO P VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V

100

I , D rain-to-S ou rc e C urre nt (A ) D

BO TTOM

I , D rain-to-S ource C urrent (A ) D

VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP

10

10

4 .5V

4 .5 V

1 0.1 1

2 0 s P U L S E W ID T H T C = 25 C
10 100

1 0.1 1

20 s P U LS E W ID TH T J = 1 50 C
10 100

V D S , D rain-to-S ource V oltage (V )

V DS , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics, TJ = 25oC

Fig 2. Typical Output Characteristics, TJ = 150oC

100

2.0

R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d)

I D = 3.7 A

I D , D rain-to-So urce C urren t (A )

1.5

TJ = 2 5C TJ = 1 5 0 C
10

1.0

0.5

1 4.0 4.5 5.0 5.5

V DS = 25V 2 0 s P UL S E W ID TH
6.0 6.5 7.0

0.0 -60 -40 -20 0 20 40 60 80

V G S = 1 0V

100 120 140 160

V G S , G ate-to -So urce Voltag e (V)

T J , J unc tion T em perature (C )

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRFL4105
1200 20

1000

C iss

800

C oss
600

V G S , G ate-to-S ource V oltage (V )

V GS C is s C rs s C o ss

= = = =

0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd

I D = 3.7 A V D S = 24 V V D S = 15 V

16

C , Capacitance (pF)

12

400

C rss
200

0 1 10 100

0 0 10 20

FO R TE S T C IR C U IT S E E FIG U R E 9
30 40

V D S , D rain-to-S ourc e V oltage (V )

Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

100

100

I S D , Reverse D rain C urrent (A)

O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n)
10s

I D , Drain C urrent (A )

10 100 s

10

TJ = 1 50 C T J = 25 C

1m s 1 10m s

1 0.4 0.6 0.8 1.0 1.2

V G S = 0V
1.4

0.1

T A = 25 C T J = 15 0C S ing le P u lse
0.1 1 10 100

1.6

V S D , S ourc e-to-D rain V oltage (V )

V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Forward Voltage

4

Fig 8. Maximum Safe Operating Area

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IRFL4105
QG

VDS VGS

RD

10V
QGS VG QGD

D.U.T.
+

RG

- VDD

10V
Charge
Pulse Width 1 s Duty Factor 0.1 %

Fig 9a. Basic Gate Charge Waveform

Current Regulator Same Type as D.U.T.

Fig 10a. Switching Time Test Circuit

VDS
50K 12V .2F .3F

90%

D.U.T. VGS
3mA

+ V - DS

10% VGS
td(on)
IG ID

tr

t d(off)

tf

Current Sampling Resistors

Fig 9b. Gate Charge Test Circuit

1000

Fig 10b. Switching Time Waveforms

T herm al R es pon se (Z thJ A )

100 D = 0 .5 0 0 .2 0 10 0 .1 0 0 .0 5 0 .0 2 1 0 .0 1
PD M

t
0.1 S IN G L E P U L S E (T H E R M A L R E S P O N S E )

1 t2

N o te s : 1 . D u ty fa c to r D = t

/t

0.01 0.00001

2 . P e a k T J = P D M x Z th J A + T A

A
10000

0.0001

0.001

0.01

0.1

10

100

1000

t 1 , R e c ta n g u la r P u lse D u ra tio n (se c )

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRFL4105
300
1 5V

E A S , S ingle P ulse A valanche E nergy (m J)

TO P
250

B O TTO M

ID 1 .7A 3 .0A 3.7 A

VDS

D RIV E R

200

RG
20 V tp

D .U .T
IA S

+ - VD D

150

0 .01

100

Fig 12a. Unclamped Inductive Test Circuit

V (B R )D SS tp

50

V D D = 25 V
25 50 75 100 125

A
150

S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

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IRFL4105
Peak Diode Recovery dv/dt Test Circuit
D.U.T

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Driver Gate Drive P.W. Period D=

P.W. Period VGS=10V

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

VDD

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

ISD

* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS
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IRFL4105
Package Outline
SOT-223 (TO-261AA) Outline

Part Marking Information

SOT-223
E X A M P L E : T H IS IS A N IR FL 0 14 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R W W = W E EK P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4

TOP

B O TT O M

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IRFL4105
Tape & Reel Information
SOT-223 Outline
4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 4 ) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 )

TR

2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 )

7 .5 5 (.2 9 7) 7 .4 5 (.2 9 4) 7 .6 0 (.2 9 9 ) 7 .4 0 (.2 9 2 ) 1 .6 0 (.0 6 2 ) 1 .5 0 (.0 5 9 ) TYP . F E E D D IR E C T IO N 1 2 .1 0 (.4 7 5 ) 1 1 .9 0 (.4 6 9 ) NOTES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 )

1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 )

2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 )

330.00 (13.000) M AX.

5 0.00 (1 .9 6 9 ) M IN .

N O TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .. 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .

1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3

1 8 .4 0 (.72 4 ) M AX . 4

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