BPW41N

Vishay Semiconductors

Silicon PIN Photodiode, RoHS Compliant

FEATURES
Package type: leaded Package form: side view Dimensions (in mm): 5 x 4 x 6.8 Radiant sensitive area (in mm2): 7.5 High radiant sensitivity Daylight blocking filter matched with 940 nm emitters Fast response times Angle of half sensitivity: = 65 Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with

94 8480

DESCRIPTION
BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters.

APPLICATIONS
High speed detector for infrared radiation Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters

PRODUCT SUMMARY
COMPONENT BPW41N Note Test condition see table Basic Characteristics Ira (A) 45 (deg) 65 0.5 (nm) 870 to 1050

ORDERING INFORMATION
ORDERING CODE BPW41N Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view

ABSOLUTE MAXIMUM RATINGS

PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW C C C C K/W

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For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81522 Rev. 1.5, 08-Sep-08

BPW41N
Silicon PIN Photodiode, RoHS Compliant

Vishay Semiconductors

BASIC CHARACTERISTICS
PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit Voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time Note Tamb = 25 C, unless otherwise specified VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm TEST CONDITION IR = 100 A, E = 0 VR = 10 V, E = 0 VR= 0 V, f = 1 MHz, E = 0 VR= 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm, VR = 5 V SYMBOL V(BR) Iro CD CD Vo TKVo Ik TKIk Ira 43 MIN. 60 2 70 25 350 - 2.6 38 0.1 45 65 950 870 to 1050 4 x 10-14 100 100 40 30 TYP. MAX. UNIT V nA pF pF mV mV/K A %/K A deg nm nm W/ Hz ns ns

p 0.5 NEP tr tf

BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified

I ra rel - Relative Reverse Light Current

1.4

1000

1.2

VR = 5 V = 950 nm

Ira - Reverse Light Current (A)

100

1.0

10

0.8

= 950 nm

VR = 5 V

0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (C)

0.1 0.01
94 8414

0.1

10

94 8409

E e - Irradiance (mW/cm)

Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature

Fig. 2 - Reverse Light Current vs. Irradiance

Document Number: 81522 Rev. 1.5, 08-Sep-08

For technical questions, contact: detectortechsupport@vishay.com

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BPW41N
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant

0 100

10

20 30

Srel - Relative Radiant Sensitivity

I ra - Reverse Light Current (A)

mW/cm2

0.5 mW/cm2

40 1.0 0.9 0.8 50 60 70 80 0.6 0.4 0.2 0

= 950 nm
10

0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2

0.7

1 0.1
94 8415

10

100
94 8406

V R - Reverse Voltage (V)

Fig. 3 - Reverse Light Current vs. Reverse Voltage

Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement

80 CD - Diode Capacitance (pF)

60

E=0 f = 1 MHz

40

20

0 0.1
94 8407

10

100

VR - Reverse Voltage (V)

Fig. 4 - Diode Capacitance vs. Reverse Voltage

S ( ) rel - Relative Spectral Sensitivity

1.2 1.0 0.8 0.6 0.4 0.2 0 750

850

950

1050

1150

94 8408

- Wavelength (nm)

Fig. 5 - Relative Spectral Sensitivity vs. Wavelength

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For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81522 Rev. 1.5, 08-Sep-08

- Angular Displacement

BPW41N
Silicon PIN Photodiode, RoHS Compliant

Vishay Semiconductors

PACKAGE DIMENSIONS in millimeters

5
0.2

0.2

Sensitive area

(2.05)

Chip position

0.3

0.3

19.8

- 0.8

8.9

6.8

< 0.5

< 0.65

Area not plane

0.45

+ 0.01 - 0.05

2.3

0.2

2.5 nom.

0.4

+ 0.1 - 0.05

(2.8)

Drawing-No.: 6.544-5108.01-4 Issue:1; 01.07.96

96 12195

technical drawings according to DIN specifications

Document Number: 81522 Rev. 1.5, 08-Sep-08

For technical questions, contact: detectortechsupport@vishay.com

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Legal Disclaimer Notice

Vishay

Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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