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Features
19A, 100V rDS(ON) = 0.200 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards
Ordering Information
PART NUMBER IRF9540 RF1S9540SM PACKAGE TO-220AB TO-263AB BRAND IRF9540 RF1S9540
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9540SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) GATE SOURCE
JEDEC TO-263AB
4-15
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRF9540, RF1S9540SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF9540, RF1S9540SM -100 -100 -19 -12 -76 20 150 1 960 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Contact Screw on Tab to the Center of Die Measured From the Drain Lead, 6mm (0.25in) from Package to the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S
TEST CONDITIONS ID = -250A, VGS = 0V (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC VDS > ID(ON) x rDS(ON) MAX, VGS = -10V VGS = 20V ID = -10A, VGS = -10V (Figures 8, 9) VDS > ID(ON) x rDS(ON) MAX, ID = -6A (Figure 12) VDD = -50V, ID 19A, RG = 9.1, RL = 2.3, VGS = -10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS, Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz (Figure 11)
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
4.5
nH
LS
Measured From the Source Lead, 6mm (0.25in) From Package to Source Bonding Pad Typical Socket Mount
7.5
nH
RJC RJA
1 62.5
oC/W oC/W
4-16
IRF9540, RF1S9540SM
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
UNITS A A
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
TC = 25oC, ISD = -19A, VGS = 0V (Figure 13) TJ = 150oC, ISD = 19A, dISD/dt = 100A/s TJ = 150oC, ISD = 19A, dISD/dt = 100A/s
170 0.8
-1.5 -
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 4mH, RG = 25, peak IAS = 19A. (Figures 15, 16).
-20
-20
-15
-10
-5
150
175
0 25
75
125
175
1 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x RJC + TC 10-3 10-2 10-1 t1 , RECTANGULAR PULSE DURATION (s) 1 10 PDM
0.01 10-5
10-4
4-17
-100
VGS = -16V
VGS = -14V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -12V VGS = -10V
-60
-40 VGS = -9V VGS = -8V -20 VGS = -5V 0 0 -10 -20 VGS = -7V VGS = -6V -30 VGS = -4V -40 -50
-50
VGS = -16V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = -14V VGS = -10V
VGS = -12V
-100
-40
-30
-10
-20 VGS = -7V -10 VGS = -6V VGS = -5V VGS = -4V -6 -8
-2
-4
-10
-2
-14
2.0 VGS = -10V, ID = 10A PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX
0.22 RESISTANCE ()
1.5
0.18
VGS = -20V
1.0
0.14
0.10
0.5
-20
-80
-100
NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT
4-18
2000
ID = 250A
1600 C, CAPACITANCE (pF)
1.05
VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS
1200
0.95
800
COSS CRSS
0.85
400
0 0
-10
-20
-30
-40
-50
100
12
10
TJ = 25oC TJ = 125oC
0.1 0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = -19A
-5
-10
80
4-19
VDD VDD
0V VGS
DUT VGS RG
VDD
+
VDS VGS 0
90%
90%
CURRENT REGULATOR
0 VDS
DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 Ig(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT VDD Qgd
VGS
Qg(TOT)
Ig(REF)
4-20
IRF9540, RF1S9540SM
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