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Jin Fu Li Jin-Fu Dept. of Electrical Engineering National Central University Jhongli, Taiwan
Outline
ROM BIST RAM BIST Serial BIST for RAMs Processor Processor-Based Based RAM BIST RAM BISTs in SOCs References
Jin-Fu Li
Introduction
Characteristics of todays SOC designs
Typically more than 30 embedded memories on a
chip hi Memories scattered around the device rather than concentrated in one location Different types and sizes of memories Memories doubly embedded inside embedded cores Test access to these memories from only a few chip I/O pins p
Built-in self-test (BIST) is considered the best solution for testing embedded memories within SOCs
It offers a simple and low-cost low cost means without
Test Generator
Response Verification
Test Controller
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Decoder
Buffer Outputs O t t
EE, National Central University Jin-Fu Li
ROM
MISR
T t Controller Test C t ll
Test Collar C
RAM
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RAM BIST
Controller
signals g
patterns Self-test is executed by using BIST circuits controlled by the microprogram ROM A wide range of test capabilities due to ROM programming p g g flexibility y
Microprogram ROM to store the test procedure Program counter which controls the microprogram
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E d End
RAM
TPG
Go/No-Go Comparator
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MICROCODE
0000000010 1010000100 0000000100 1110010100 0000011000 1110000100 0001000000 0000001000 1101010100 0000011000 1101000100 0000000001
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E d End
FSM
Test Collar
RAM
TPG
Go/No-Go Comparator
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Test Collar C
RAM
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Shift Shift_cmd d
BSC=0
Get_cmd
Apply
DONE=0
ENA=1
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Programmability
The programmability Th bili can b be achieved hi db by using i test command The test command format
Data backgrounds
The width Th idth of f each h field fi ld affects ff t the th programmability of the BIST design
For F example, l if 4 bit bits are used df for OP OP, th then only l 16
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Init
Null=1 Null=0
DONE/GO
Compare
Error=0
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Serial BIST
applying these BIST schemes to chips that have multiple embedded RAMs of varying sizes and
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Only a small amount of additional circuitry is Only a few lines are needed to connect the RAM Several RAM blocks easily y share the BIST The serial serial-access access mode does not compromise Existing E i ti memory d designs i d do not t need d any
modification to use the serial interface
Jin-Fu Li EE, National Central University
required
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Serial-Data-Path Connection
Row de ecoder
Ci
Ci+1
Column decoder
Latch
Latch
Ii
EE, National Central University
Oi
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Ii+1
Oi+1
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Word content
Serial out
X R0 W1 R0 W1 R0 W1 R0 W1 X 1 1 1 1 1 1 1
0 0 1 1 1 1 1 1 1
0 0 0 0 1 1 1 1 1
0 0 0 0 0 0 1 1 1
0 0 0 0 0 0 0 0 1
X 0 0 0 0 0 0 0 0
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Assume that a RAM has W words, and each A Read operation is denoted by R0, R1, or Rx,
word contains C bits depending on the expected value at the serial output (x=dot care) used and only the serial input is forced to the value indicated f ll follows c ( RxW 0 ) C ( R 0 , W 0 ) C ; ( R 0 , W 1) C ( R1, W 1) C
For a write operation operation, the terms W0 or W1 are The SMarch modified from March C- is as
( R1, W 0 ) C ( R 0 , W 0 ) C ; ( R 0 , W 1) C ( R1, W 1) C
( R1, W 0 ) C ( R 0 , W 0 ) C ; ( R 0 , W 0 ) C ( R 0 , W 0 ) C
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Controller SO
lsb
Timing SI generator
msb
C-1
Multiplexer
C C
Multiplexer
Address
Data in
Data out
Control
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Counters
Controller SO SI
Timing generator g
Add Address
R d/W it Read/Write
SO
SO
DeMux
C Counters t
SO SI Controller
Timing g generator
Read/Write
Address
SO
SO
n m wire n
n e m wire
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Processor
Test Collar
RAM
TPG
Go/No-Go Comparator
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ADDR
DATAO
Mux_sel
Embedded CPU
Clock_cpu
BIST core
On-chip bus
Embedded Memory
Ctrl_cpu
Ctrl_bist
control
DATAI_cpu
DATAI_bist
DATAI_sys
DATAI
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BIST core
DATAO_bist RBG RAL L Lowest/highest t/hi h t addr dd REA RFLAG RED Controller Address counter ADDR_bist
DATAO_cpu
ADDR_cpu Address
decorder
DATAI_bist
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Data registers
Register RBG RAL RAH RME RIR RFLAG RED REA Function Store background data Store lowest address Store highest address Store current March element Instruction register of BIST circuit Status register of BIST circuit Erroneous response of defective cell Address of defective cell
Source: Prof. C. W. Wu, NTHU
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BIST procedure
Source: Prof. C. W. Wu, NTHU
Test program write data background to RBG Test program write lowest/highest address to RAL/RAH
Test program write March instructions to RME Test program write START to RIR
(Wa)
(Ra,Wa)
(Ra,Wa)
(Ra,Wa)
(Ra,Wa)
(Ra)
yes
No
March element complete
Write ERROR to RFLAG Write error response to RED Write faulty addr to REA
SOC Testing
MPEG
SRAM
SRAM
DRAM
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Flash Memory
Off-chip Source/Sink
1. Pins determine bandwidth 2. More TAM area 3. Requires expensive ATE
CPU
UDL TAM
Source MPEG
SRAM
SRAM
ADC
FPGA
Wrapper
Flash Memory
CPU
UDL
DSP
Sink
Sink
Source MPEG
Source
SRAM
SRAM
DRAM
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Core1
WIR
CoreN
WIR
Fout
WSI
WSO WIP
WSI
WSO
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Memories in SOCs
ADC FPGA Flash Memory CPU UDL DSP
MPEG
SRAM BIST
SRAM
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controlling pins The total BIST controlling pins is huge if each BISTready memory cores has its own BIST controlling pins
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SRAM
BIST
MBI MBI
MPEG
BIST SRAM
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MSO_N will be high after N-K clock cycles if the concurrent output of the (K+1) through the N memory cores are fault free
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1500-Compilant BIST
Wrapper
TAP P
BIST
RAM
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Processor
Wrapper P1500 Instructions
Control Unit
Test Program
Memory Adapter
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Control Unit
Program Counter (PC) The control unit allows the correct update of some registers located in Memory Adapter This part simplifies the processor reuse in different applications without the need for any re-design
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Memory Adapter
Control Address registers g (Current ( _address) ) Control Memory registers
Current_data Received_data R i d d t
Dbg g_index, , Step, p, Direction flag, g, and Timer registers g Status, Error, and Result registers Add_Max, Add_Min, DataBackGround, Dbg_max
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M Meaning i
Current_address Add_Max Direction flag BACKWARD Current_address Add_Min g FORWARD Direction flag Current_data DataBackGround[Dbg_index] Dbg_index Dbg_index+1 Current_data NOT (Current_data) Current data Memory[Current_address] Current_data Memory[Current address] Memory[Current_address] Current_data
Source: Appello D., et. al. ITC03
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W I R W B Y
W D R
W C D R
TAP controller c
Processor
W B R
Me emory
CORE
Test Program
WSO
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Summary
ROM BIST has been presented p ROM-based and FSM-based RAM BIST have Serial BIST methodology for embedded BIST approaches pp for testing g multiple p RAMs in an
SOC have also been addressed memories i h has also l presented t d been introduced
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[1] A. K. Sharma,Semiconductor memories technology, testing, and reliability, li bilit IEEE P Press, 1997 1997. [2] B. Nadeau-Dostie, A. Silburt, and V. K. Agarwal,Serial interfacing for embedded-memory testing, IEEE D&T, pp.52-63, apr. 1990. [3] C. W. Wu,VLSI testing & design for testability II: Memory built-in selftest, http://larc.ee.nthu.edu.tw/~cww/ [4]C. H. Tsai and C.-W. [4]C.-H. C. W. Wu, ``Processor-programmable Processor programmable memory BIST for bus-connected embedded memories'', in Proc. Asia and South Pacific Design Automation Conf. (ASP-DAC), Yokohama, Jan. 2001, pp. 325-330 [5]C.-W [5]C W. Wang, Wang C C.-F F. Wu, Wu J J.-F F. Li, Li C C.-W W. Wu, Wu T T. Teng, Teng K K. Chiu, Chiu and H. H -P P. Lin Lin, ``A A built-in self-test and self-diagnosis scheme for embedded SRAM'', in Proc. 9th IEEE Asian Test Symp. (ATS),Taipei, Dec. 2000, pp. 45-50 [6]D. Appello, [6]D Appello F F. Corno Corno, M. M Giovinetto, Giovinetto M M. Rebaudengo Rebaudengo, and M M. S S. Reorda Reorda,A A P1500 compliant BIST-Based approach ro embedded RAM diagnosis, pp.97-102, MTDT, 2001. [7]J. F [7]J F. Li Li, H H. J J. H Huang, J J. B B. Ch Chen, C. C P. P Su, S C. C W. W Wu, W C. C Cheng, Ch S. S I. I Chen, Ch C. C Y. Y Hwang, and H. P. Lin,A hierarchical test methodology for systems on chip, IEEE Micro, pp. 69-81, Sep./Oct., 2002. [8]S. Mourad and Y. Zorian,Principles of f Testing Electronic Systems, John Wiley & Sons, 2000.
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References
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