TPC8116-H

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII)

TPC8116-H
High Efficiency DCDC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 9.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 24m (typ.) High forward transfer admittance: |Yfs| =14 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancement mode: Vth =0.8 to2.0 V (VDS =10 V, ID =1 mA) Unit: mm

Maximum Ratings (Ta = 25C)

Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 40 40 20 7.5 30 1.9 Unit V V V A

JEDEC JEITA TOSHIBA

2-6J1B

Pulsed (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)

Weight: 0.085 g (typ.)

W

Drain power dissipation

Drain power dissipation

1.0

Circuit Configuration
8 7 6 5

Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy

26 7.5 0.12 150 55 to 150

mJ A mJ C C

Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care.

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TPC8116-H
Thermal Characteristics
Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit C/W

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Rth (ch-a)

125

C/W

Marking (Note 5)

TPC8116 H

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Note 1:

The channel temperature should not exceed 150C during use. (b) Device mounted on a glass-epoxy board (b)

Note 2: (a) Device mounted on a glass-epoxy board (a)

FR-4 25.4 25.4 0.8 (Unit: mm)

FR-4 25.4 25.4 0.8 (Unit: mm)

(a)

(b)

Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 7.5 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)

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TPC8116-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf toff VDD 32 V, VGS =10V, ID = 7.5A VDD 32 V, VGS = 5 V, ID = 7.5A VDD 32 V, VGS = 10 V, ID = 7.5A Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 0 V -10 V 4.7 ID = 3.8 A VOUT RL = 5.3 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = 20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3.8 A VGS = 10 V, ID = 3.8 A VDS = 10 V, ID = 3.8 A Min 40 20 0.8 7 Typ. 29 24 14 1190 170 250 5 12 12 43 27 15 3.2 8.1 9.7 Max 10 10 2.0 37 30 ns nC pF Unit A A V V m S

VDD 20 V Duty < = 1%, tw = 10 s

Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (Miller) charge Gate switch charge

Qg

Qgs1 Qgd QSW

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 7.5 A, VGS = 0 V Min Typ. Max 30 1.2 Unit A V

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TPC8116-H

ID VDS
10 10 8 8 4 3.2 3.4 3 2.8 2.7 4 2.6 2.5 2 VGS = 2.4 V Common source Ta = 25C Pulse test 20 10 8 16

ID VDS
4 3.4 Common source Ta = 25C Pulse test 3.2 3

(A)

(A)

6 4.5

6 12 4.5

ID

Drain current

Drain current

ID

2.8

2.6

VGS = 2.4 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0

Drain-source voltage

VDS

(V)

Drain-source voltage

VDS

(V)

ID VGS
30 Common source VDS = 10 V Pulse test 0.5

VDS VGS
Common source Ta = 25 Pulse test

25

(V) VDS Drain-source voltage

0.4

(A) ID

20

0.3 ID = 7.5 A

Drain current

15

0.2

10

100

0.1

3.8 1.9

25

Ta = 55C

0 0

10

12

Gate-source voltage

VGS

(V)

Gate-source voltage

VGS

(V)

Yfs ID (S)
100 300 Common source VDS = 10 V Pulse test Ta = 55C 100 Common source Ta = 25C Pulse test

RDS (ON) ID

|Yfs|

Drain-source ON-resistance RDS (ON) (m)

100

Forward transfer admittance

10

25

4.5 V 30

VGS = 10 V 10

0.1 0.1

10

100

3 0.1

10

100

Drain current

ID

(A)

Drain current

ID

(A)

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TPC8116-H

RDS (ON) Ta
50 100 ID = 7.5 A Common source Pulse test 3.8 1.9 Common source Ta = 25C Pulse test

IDR VDS

Drain-source ON-resistance RDS (ON) (m)

40

IDR

(A)

10

4.5

10

VGS = 4.5 V ID = 1.9/3.8/7.5A

20 10 V 10

Drain reverse current

30

0 80

0.1 40 0 40 80 120 160

1 0 0.2 0.4 0.6

VGS = 0 V 0.8 1.0 1.2

Ambient temperature

Ta

(C)

Drain-source voltage

VDS

(V)

Capacitance VDS
10000 2.0

Vth Ta

Vth (V) Gate threshold voltage

1.6

(pF)

Ciss 1000

Capacitance

1.2

Coss 100 Common source VGS = 0 V f = 1 MHz Ta = 25C 10 0.1 1 10 Crss

0.8 Common source VDS = 10 V ID = 1 mA Pulse test 40 0 40 80 120 160

0.4

100

0 80

Drain-source voltage

VDS

(V)

Ambient temperature

Ta

(C)

PD Ta
2.0 (1)
(1) Device mounted on a glass-epoxy

Dynamic input/output characteristics

50 Common source ID = 7.5 A Ta = 25C Pulse test VDS 16 12 8 20 VDD = 32 V 8 20

(W)

board (b) (Note 2b)

10s

PD

VDS

Drain power dissipation

0.8

(2)

Drain-source voltage

1.2

10

VGS

0.4

0 0

50

100

150

200

0 0

10

20

30

40

0 50

Ambient temperature

Ta

(C)

Total gate charge

Qg

(nC)

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Gate-source voltage

30

VGS

1.6

(2) Device mounted on a glass-epoxy

(V)

40

16

(V)

board (a) (Note 2a)

TPC8116-H
rth tw rth (C/W)
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b)

(2) 100 (1)

Transient thermal impedance

10

Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000

Pulse width

tw

(s)

Safe operating area

100 ID max (Pulse) *

(A)

t =1 ms * 10 10 ms *

Drain current

ID

* Single - pulse Ta = 25C Curves must be derated linearly

with increase in temperature. 0.1 0.1 1

VDSS max 10 100

Drain-source voltage

VDS

(V)

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TPC8116-H

RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

2006-01-17