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DATA SHEET
andbook, halfpage
M3D088
Philips Semiconductors
Product specication
BSH103
PINNING - SOT23 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION
handbook, halfpage
3 d
g s
DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETERS drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ; ID = 1 mA Ts = 80 C VGS = 2.5 V; ID = 0.5 A Ts = 80 C CAUTION VGD = 0; IS = 0.5 A CONDITIONS 0.4 MIN.
UNIT
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
UNIT
W W W C C
Source-drain diode source current (DC) peak pulsed source current 0.5 2 A A
MGM190
MBK502
handbook, halfpage
0.6
handbook, halfpage
10
IDS (A)
(2)
1
(1)
101 P 0.2 102 tp 0 0 40 80 120 Ts (C) 160 103 101 T 1 10 VDS (V) 102 t
= T
tp
DC
Fig.3 SOAR.
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
UNIT K/W
103 handbook, full pagewidth Rth j-s (K/W) =1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 106 0 105 104 103 102 101 tp (s) tp T t P
MBK503
102
tp T
Fig.4
Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
UNIT V V nA nA pF pF pF pC pC pC
Switching times td(on) tf ton td(off) tr toff turn-on delay time fall time turn-on switching time turn-off delay time rise time turn-off switching time 2.5 3.5 6 20 7 27 ns ns ns ns ns ns
Source-drain diode VSD trr source-drain diode forward voltage reverse recovery time 25 1 V ns
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
90 %
10 %
td(off) tr toff
ton
Fig.5 Switching times test circuit with input and output waveforms.
handbook, halfpage
MBK507
16 VDS 14 (V)
MBK505
VGS (V) 4 12 10
ID (A) 3
(6)
2 8
(1) (2)
(7)
6 1 4
(8)
1 2 0 1000 1000 1600 1800 1800 2000 2200 200 400 600 800 0 0
(9)
0 0 2 4 6 8 10 VDS (V)
Tamb = 25 C; tp = 300 s; = 0. (1) (2) (3) (4) VGS = 7.5 V. VGS = 5.5 V. VGS = 4.5 V. VGS = 3.5 V.
Fig.6
Gate-source and drain-source voltages as functions of total gate charge; typical values.
Fig.7
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
handbook, halfpage
MBK506
handbook, halfpage
300
MBK504
ID (A) 3
C (pF) 200
100 1 Ciss
0 0 1 2 VGS (V) 3
0 0 10 20
handbook, halfpage
MBK508
IS (A)
handbook, halfpage
10
MBK509
RDSon ()
(1) (2) (3) (4)
1.6
1.2
(5) (6)
1 0.8
(1)
(2)
(3)
0.4
10 VGS (V)
Tamb = 25 C; tp = 300 s; = 0. (1) ID = 0.1 A. (2) ID = 0.22 A. (3) ID = 0.45 A. (4) ID = 0.9 A. (5) ID = 1.8 A. (6) ID = 3.6 A.
Fig.10 Source current as a function of source-drain diode forward voltage; typical values.
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
MBK510
handbook, halfpage
1.2
handbook, halfpage
(1)
1.6
MBK511
k k 1.2 0.8
(2)
0.8
0.4 0.4
0 65
15
35
85
135
185 Tj (C)
0 65
15
35
85
135
185 Tj (C)
(1) RDSon at VGS = 4.5 V; ID = 0.5 mA. (2) RDSon at VGS = 2.5 V; ID = 0.5 mA.
Fig.12 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values.
Fig.13 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values.
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
SOT23
HE
v M A
Q A A1
1
e1 e bp
2
w M B detail X Lp
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
EUROPEAN PROJECTION
1998 Feb 11
Philips Semiconductors
Product specication
BSH103
This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Feb 11
10
Philips Semiconductors
Product specication
BSH103
1998 Feb 11
11
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
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