PRELIMINARY

Notice : This is not a final specification Some parametric are subject to change.

INK0210AP1
High Speed Switching Silicon N-channel MOSFET

DESCRIPTION
INK0210AP1 is a Silicon N-channel MOSFET. This product is most suitable for use such as portable machinery, because of low voltage drive and low on resistance.

OUTLINE DRAWING
4.4 1.6

UNIT

1.5

FEATURE
Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth=1.02.5V Low on Resistance. RDS(on)=0.3(TYP). High speed switching. Small package for easy mounting.

S 0.8MIN

D
0.5

High drain current ID=2A

2.5

MARKING

0.4 0.4

1.5 3.0 TERMINAL CONNECTER SSOURCE DDRAIN GGATE

Rating 60 20 2 4 500 +150 -55+150 Unit V V A A mW
S
LOT

APPLICATION
Switching

JEITASC-62 JEDECSOT-89

MAXIMUM RATINGSTa=25
Symbol VDSS VGSS ID IDP PD Tch Tstg Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(DC) Drain current(Pulse) 1 Total Power Dissipation Channel Temperature Storage temperature

EQUIVALENT CIRCUIT
D

MARKING
Type Name

KA
G

1Pw10s, Duty cycle1%

ELECTRICAL CHARACTERISTICSTa=25
Parameter Drain-Source Breakdown Voltage Gate-Source Leak current Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transfer Admittance Static Drain-Source On-State Resistance Input Capacitance Output Capacitance Switching Time Symbol Test Condition ID=100A, VGS=0V VGS=20V, IDS=0A VDS=60V, VGS=0V ID=250A, VDS= V VDS=10V, ID=1A ID=0.5A, VGS=5.0V VDS=10V, VGS=0V, f=1MHz VDD=30V, ID=1A VGS=05V
GS

MIN 60 1.0 -

Limit TYP 2.0 0.30 220 28 16 25

MAX 10 1 2.5 -

Unit V A A V S pF pF ns ns

V(BR)DSS IGSS IDSS Vth | Yfs | RDS(ON) Ciss Coss ton toff

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY
Notice : This is not a final specification Some parametric are subject to change.

INK0210AP1
High Speed Switching Silicon N-channel MOSFET

TYPICAL CHARACTERISTICS
ID-VGS 10 VDS=10V Reverse Drain current IDR(A) 10 VGS=0V 1 IDR-VDS

Drain current ID(A)

0.1

0.01

Ta=100 75 25 -25

0.1

0.01

Ta=100 75 25 -25

0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 Gate-Source voltage VGS(V) |Yfs|-ID 10 Forward transfer admittance |Yfs|(S) VDS=10V

0.001 0 0.5 1 1.5 2 Drain-Source voltageVDS(V) RDS(on)-ID 1 Drain-Source ON Resistance RDS(on)() VGS=4.5V

Ta=100 75 25 -25

0.1

Ta=100 75 25 -25

0.1 0 0.5 1 1.5 2 Drain current ID(A) RDS(on)-VGS 10 ID=1A 2.5 3

0.01 0 0.5 1 1.5 2 Drain current ID(A) Vth-Ta 3 Gate threshold voltage Vth(V) 2.5 2 1.5 1 0.5 0 0 2 4 6 8 Gate-Source voltage VGS(V) 10 -50 -25 0 25 50 75 Ambinet temperature Ta() 100 125 ID=250uA VDS=VGS 2.5 3

Drain-Source ON Resistance RDS(on)()

Ta=100 75 25 -25

0.1

ISAHAYA ELECTRONICS CORPORATION

PRELIMINARY
Notice : This is not a final specification Some parametric are subject to change.

INK0210AP1
High Speed Switching Silicon N-channel MOSFET

TYPICAL CHARACTERISTICS

C-VDS 1000 1000 toff Capacitance C(pF) Ciss Switching time t (ns) 100 tf ton 10 tr

t-ID Ta=25 VDD=30V VGS=5V RG=50,PW=10us

100

Coss Ta=25 VGS=0V 10 0.1 1 10 100 Drain-Source voltage VDS(V) ASO 10

1msec Ta=25 Single Pulse

1 0.01

0.1

10

Drain current ID(A)

1 Drain current ID(A)

10msec

0.1

RDS(on) Limited VGS=10V DC[PD=500mW]

100msec

1sec

0.01

0.001 0.01

package mounted on glass-epoxy substrate. (9*19*1mm) [PD=900mW]

0.1

10

100

Drain-Source voltage VDS(V)

Switching time test circuit

5V IN

OUT

10V

90%

RL 0 10s VDD=30V Duty1% Inputtr, tf<10ns Common source Ta=25 50 VDD

Input Waveform
0V VDD

10%

10%

Output Waveform
VDS(ON
ton

90%
tr toff tf

ISAHAYA ELECTRONICS CORPORATION

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

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Jun.2010