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BSS 149
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Type
Ordering Code
Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current, TA = 34 C Pulsed drain current, Max. power dissipation, Symbol Values 200 200 20 Class 1 0.35 1.05 1.0 55 + 150 125 E 55/150/56 W C K/W A Unit V
TA = 25 C TA = 25 C
Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Data Sheet
05.99
BSS 149
Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit
VGS = 3 V, ID = 0.25 mA
Gate threshold voltage
V(BR)DSS
200 1.2 0.7
VGS(th) IDSS
VDS = 3 V, ID = 1 mA
Drain-source cutoff current
1.8
IGSS RDS(on)
VGS = 20 V, VDS = 0
Drain-source on-resistance
VGS = 0 V, ID = 0.05 A
Dynamic Characteristics Forward transconductance
gfs
0.4 0.6 500 40 12 7 20 60 50
S pF 670 60 20 10 30 80 65 ns
Ciss Coss
Crss
td(on) tr td(off) tf
Data Sheet
05.99
BSS 149
Electrical Characteristics (contd) at Tj = 25 C, unless otherwise specified. Parameter Reverse Diode Continuous reverse drain current TA = 25 C Pulsed reverse drain current Symbol min. Values typ. max. A 0.8 Unit V V V V V V V V 0.35 1.05 V Symbol Limit Values min. Range of VGS(th) max. 0.15 0.80 0.93 1.06 1.19 1.32 1.45 1.58 0.95 1.08 1.21 1.34 1.47 1.60 1.73 1.2 Test Condition Unit
IS ISM
TA = 25 C
Diode forward on-voltage
VSD
VGS(th)
Data Sheet
05.99
BSS 149
Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Ptot = f (TA) Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C
Data Sheet
05.99
BSS 149
Data Sheet
05.99
BSS 149
Data Sheet
05.99