EN1802 - Basic Electronics

S1-S2 Course Introduction By : Dr. S. Thayaparan

Source of Origin:

1. http://cktse.eie.polyu.edu.hk/eie209 By Prof. Michael Tse 2. http://en.wikipedia.org/wiki/Diode

Course Outline
1. 2. 3. 4. 5. 6. 7. Introduction Materials used in Electronics Diodes, Diode Circuits and Applications Bipolar Junction Transistors and Circuits Field Effect Transistors and Circuits Integrated Circuits and Amplifiers Logic Gates and Circuits
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History

Ambrose Fleming and his Invention 1904

Sir John Ambrose Fleming (18491945) was an English electrical engineer and physicist, known primarily for inventing in 1904 the first vacuum tube.
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History

EN1802 - Basic Electronics

Vacuum Diode
1. Vacuum diode supports current flow through it in only one direction 2. Heated cathode emits electrons 3. Anode collects electrons 4. Microwave oven has a specialized vacuum diode that sits inside a magnetic field

EN1802 - Basic Electronics

History

Lee de Forest and his Invention - 1907

Lee De Forest (1873 1961) was an American inventor with over 180 patents to his credit. He invented the Audion (vaccum tube amplifier). He is one of the fathers of the "electronic age , as the Audion helped to usher in the widespread use of electronics. He is also credited with one of the principal inventions which brought sound to motion pictures.

Then Things followed in suit 1900 1940 s

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Vacuum Tube Amplifier

De Forest's Audion tube came to be known as the triode tube, because it had three elements: filament, grid, and plate Schematic symbol for an indirectly heated triode

EN1802 - Basic Electronics

History
Vacuum Tube era Vacuum Computers Vacuum Memories Vacuum Radios Vacuum TV

EN1802 - Basic Electronics

History
Everything changed with the invention of the transistor, at Bell Labs in 1947 by William Shockley, John Bardeen, and Walter Brattain, all of whom won the 1956 Nobel Prize in physics for their efforts

Transistor era Transistor Computers Transistor Memories Transistor Radios Transistor TV But then came the interconnection Problem
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History
if you can make all the separate components out of semiconductor material, why not make themand all the wires that connect them togetheron the same piece of semiconductor material?

Integration Era SSI - transistors numbering in the ten (1960s) MSI - hundreds of transistors on each chip (1970s) VLSI - hundreds of thousands of transistors (1980s)

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Where are we now ?

Billions of transistors on a chip

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Electronic Products - Some Examples

Age of electronics

microcontrollers, DSPs, and other VLSI chips are everywhere Digital Camera Cell phone Electronics of today and tomorrow higher performance (speed) circuits low power circuits for portable applications Game Console more mixed signal MP3/CD Player emphasis wireless hardware high performance signal processing sensors and microsystems
PDA
EN1802 - Basic Electronics

Camcorder

Laptop

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Examples of Printed Circuit Board Designs

CAD design of a high speed 6 layer PCB By ELECTROSOFT ENGINEERING

The 6 layer PCB once manufactured and assembled By ELECTROSOFT ENGINEERING

Source of Origin : ELECTROSOFT ENGINEERING webpage http://www.pcb.electrosoft-engineering.com/design-examples-printed-circuitboards.html

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Integrated Circuits (IC) Examples

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Decapsulated IC - I

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Decapsulated IC - II

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Semiconductor - N Type
Pure silicon has few free electrons and is quite resistive Silicon is normally doped with other elements to increase its conductivity Dopants, like phosphor (P), arsenic (As), and Antimony (Sb) easily give up one of their electrons to the impure silicon These donated electrons are free to move about the silicon, and its conductivity increases dramatically N-type semiconductor with N-type dopant N-type dopant has 5 valance electron Minority carriers are the holes from base semiconductor Majority carriers are the electrons from n-type dopant and base semiconductor

Note : valence electrons are the electrons of an atom that can participate in the formation of chemical bonds with other atoms EN1802 - Basic Electronics

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Semiconductor - P Type
Dopants, like boron(B), indium (In), and aluminum(Al) grab electrons from the surrounding silicon atoms, leaving positively charged silicon ions behind Positive silicon ions try to lessen their charge by grabbing electrons from their neighbors P-type dopant has 3 valance electron P-type semiconductor with P-type dopant Majority carriers are the holes from p-type dopant and base semiconductor Minority carriers are the electrons from base semiconductor

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PN JUNCTION
P
e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e

VB
P
+ e + e + e + e + e e + e + e + e + e + e e e e e e e e e e e e e e e e e e e e e e e e e e e e e e

Depletion region
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Diode

Note : Depletion region is formed from a conducting region by removal of all free charge carriers, leaving none to carry a current
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Semiconductor Diodes
Diodes are made from semiconducting materials (crystalline silicon) with added impurities Impurities added to create a region with negative charge carriers (electrons), called ntype semiconductor Impurities added to create a region with positive charge carriers (holes), called p-type semiconductor PN Junction is the boundary within the crystal between P region and N region The crystal conducts a current of electrons in a direction from the N-type side (called the cathode) to the P-type side (called the anode), but not in the opposite direction; that is, a conventional current flows from anode to cathode (opposite to the electron flow, since electrons have negative charge). Another type of semiconductor diode is the Schottky diode, is formed from the contact between a metal and a semiconductor rather than by a p-n junction - Metals (molybdenum, platinum, chromium or tungsten) and N-type semiconductor - Metal sides is the anode and N-type semiconductor is the cathode - Very fast switching and low forward voltage drop.
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