NTE2900 MOSFET NCh, Enhancement Mode High Speed Switch

Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.5A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C GatetoSource Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Single Pulse Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.8V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +175C Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C Mounting Torque (632 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm) Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Thermal Resistance, JunctiontoAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Typical Thermal Resistance, CasetoSink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W Note Note Note Note 1. 2. 3. 4. Repetitive rating; pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = +25C, L = 4.5mH, RG = 25, IAS = 14A ISD 14A, di/dt 150A/s, VDD 250V, TJ +175C Pules Width 300s, Duty Cycle 2%.

Electrical Characteristics: (TJ = +25C unless otherwise specified)

Parameter DraintoSource Breakdown Voltage Breakdown Voltage Temp. Coefficient Static DraintoSource OnResistance Gate Threshold Voltage Forward Transconductance DraintoSource Leakage Current Symbol V(BR)DSS Test Conditions VGS = 0V, ID = 250A Min 250 2.0 6.7 VDD = 125V, ID = 7.9A, RG = 9.1, RD = 8.7, Note 4 Between lead, .250in. (6.0) mm from package and center of die contact VGS = 0V, VDS = 25V, f = 1MHz Typ 0.34 11 24 53 49 4.5 7.5 1300 330 85 Max 0.28 4.0 25 250 100 100 68 11 35 Unit V V/C V mhos A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF

V(BR)DSS Reference to +25C, ID = 1mA TJ RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss VGS = 10V, ID = 8.4A, Note 4 VDS = VGS, ID = 250A VDS = 50V, ID = 8.4A, Note4 VDS = 250V, VGS = 0V VDS = 200V, VGS = 0V, TJ = +125C VGS = 20V VGS = 20V ID = 7.9A, VDS = 200V, VGS = 10V, Note 4

GatetoSource Forward Leakage GatetoSource Reverse Leakage Total Gate Charge GatetoSource Charge GatetoDrain (Miller) Charge TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capaticance

SourceDrain Ratings and Characteristics:

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward TurnOn Time Symbol IS ISM VSD trr Qrr ton Note 1 TJ = +25C, IS = 14A, VGS = 0V, Note 4 TJ = +25C, IF = 7.9A, di/dt = 100A/s, Note 4 Test Conditions Min Typ 250 2.3 Max 14 56 1.8 500 4.6 Unit A A V ns C

Intrinsic turnon time is neglegible (turnon is dominated by LS+LD)

Note 1. Repetitive rating; pulse width limited by maximum junction temperature. Note 4. Pulse width 300s; duty cycle 2%.

.420 (10.67) Max

.110 (2.79)

.147 (3.75) Dia Max

.500 (12.7) Max

.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max

Gate .100 (2.54)

Source Drain/Tab