Professional Documents
Culture Documents
in
PD - 91482C
IRF9530N
HEXFET Power MOSFET
l l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
ID = -14A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Max.
-14 -10 -56 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
0.50
Max.
1.9 62
Units
C/W
5/13/98
www.DataSheet.in
IRF9530N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.20 VGS = -10V, ID = -8.4A -4.0 V VDS = V GS, ID = -250A S VDS = -50V, ID = -8.4A -25 VDS = -100V, VGS = 0V A -250 VDS = -80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 58 ID = -8.4A 8.3 nC VDS = -80V 32 VGS = -10V, See Fig. 6 and 13 VDD = -50V ID = -8.4A ns RG = 9.1 RD = 6.2, See Fig. 10 Between lead, 6mm (0.25in.) nH G from package and center of die contact VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Conditions D MOSFET symbol -14 showing the A G integral reverse -56 p-n junction diode. S -1.6 V TJ = 25C, IS = -8.4A, VGS = 0V 130 190 ns TJ = 25C, I F = -8.4A 650 970 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.DataSheet.in
IRF9530N
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P
100
10
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
10
-4.5V
1
-4.5 V
0.1 0.1 1
2 0 s P U LS E W ID TH T c = 2 5C A
10 100
0.1 0.1 1
2 0 s P U LS E W ID T H T C = 1 75 C
10
100
100
2.5
ID = -14A
2.0
T J = 2 5 C
10
TJ = 1 7 5 C
1.5
1.0
0.5
0.1 4 5 6 7
V DS = -5 0 V 2 0 s P U L S E W ID TH
8 9
A 10
VGS = -10V
0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( C)
www.DataSheet.in
IRF9530N
2000
1600
V GS C iss C rs s C o ss
= = = =
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
20
ID = -8.4A
C , Capacitance (pF)
15
1200
C iss
10
800
C oss
C rss
400
0 1 10 100
0 0 10 20 30
100
1000
100 10us
T J = 25 C
100us 10 1ms
V G S = 0V
1.4
1 1
1.6
www.DataSheet.in
IRF9530N
14
VDS
12
RD
VGS RG
D.U.T.
+
10
VDD
-10V
Pulse Width 1 s Duty Factor 0.1 %
2
VGS 10%
TC , Case Temperature ( C)
90%
VDS
10
D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.02 0.01
0.01 0.00001
www.DataSheet.in
IRF9530N
VDS L
700
RG
D .U .T IA S D R IV E R
0 .0 1
600
VD D A
-2 0 V tp
500
400
300
15V
200 100
IAS
tp V (BR)DSS
50K
QG
12V
.2F
-10V
QGS VG QGD
VGS
.3F
D.U.T.
+VDS
-3mA
Charge
IG
ID
www.DataSheet.in
IRF9530N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
www.DataSheet.in
IRF9530N
Package Outline
TO-220AB Outline Dimensions are shown in millimeters (inches)
10 .54 (.4 15) 10 .29 (.4 05) 3 .7 8 (.149 ) 3 .5 4 (.139 ) -A 6.47 (.25 5) 6.10 (.24 0) -B 4.69 ( .18 5 ) 4.20 ( .16 5 ) 1 .32 (.05 2) 1 .22 (.04 8)
1.15 (.04 5) M IN 1 2 3
L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN
3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
3X
0 .3 6 (.01 4)
INR TE RTIO N A TIO NAL IN TE NA NAL RTIF E C IE TIF REC R IE R IR F IR 10F 110 0 10 LOGO LOG 9 2 49 62 4 6 9B 9B 1M 1M AE SM SB EL MY BLY ASS LOT CE O DE LOT CO D
PT AR TU M NB UE MR BER PAR N
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98