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B.Tech.

IV th Semester EE(F Scheme) IInd Mid Term Examination March 2013 Analog Electronics (EE-202-F) Time: 2 Hrs Max. Marks: 50 Section-A Q1.Objective type questions:- (Choose an appropriate answer) i). Zener diode is always used in a circuit a) Forward-biased b) Reverse-biased c) Connected in series d) none of the above ii). MOSFET is also called a) JFET b) Voltage regulator c) IGFET d) None of the above iii). Which one of the following is not fabricated as IC a) Inductor b) Resistor c) Capacitor d) none of the above iv). P-N junction diode conducts when its junction is a) forward-biased b) reverse-biased c) wrong statement d) none of the above v). MOSFET is a) current controlled c)frequency controlled device b)voltage controlled d) chopper controlled [10 Marks]

vi) A transistor is a). One terminal device

b) two terminal device

c).three terminal device d).none of the above vii).A PN junction is also called a). pole b) magnet c). Diode d).horn viii) Transistor gain is denoted by letter. a). P b).C c).T d).A ix). Transistor is. a). unipolar device b). bipolar device c). multipolar device d). none of the above x). Frequencies where the gain of amplifier is constant are called. a). time period b). ripple frequencies c). mid-band frequencies d). a and c both Section - B Q2. Very Short answer type questions:- [ 10 Marks] i).What is an intrinsic semiconductor?. ii). How many terminals are there in a diode? iii). Why the biasing is done in a transistor? iv). Why an amplifier is used? v).If electrons and holes are always generated in pair? vi).What is the charge on a hole? and why? vii).How the conduction is controlled in a MOSFET? viii).What is doping? ix).What is Silicon Dioxide Layer? x).What is drift current?

Section-C Q3. Short answer type questions:[10 Marks]

(i). What process is opposite of the thermal generation of electronhole pairs? (ii). Explain why the temperature coefficient of resistance of a semiconductor is negative? (iii) Define Peak inverse voltage. (iv) Explain why an ordinary junction transistor is called bipolar. (v) Explain why a transistor should be biased. Section-D Q4.Long answer type questions:- (Attempt any Two Questions) [ 20 Marks] (i). Explain the working of full wave bridge rectifier. Why a Bridge type full wave rectifier is preferred over a centre tap full-wave rectifier?

(ii). What is MOSFET? Sketch and explain the basic construction of an N-Channel Depletion type MOSFET. (iii). Explain the construction of a transistor with suitable diagram. Draw the input characteristic of common emitter configuration.

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