AP4800M

Advanced Power Electronics Corp.

Low On-Resistance Fast Switching Simple Drive Requirement
D D D D

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS RDS(ON)
G

25V 18m 9A

ID

SO-8

Description
D D
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G

G
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.

S S

Absolute Maximum Ratings

Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3

Rating 25 20 9 7 40 2.5 0.02 -55 to 150 -55 to 150

Units V V A A A W W/

Continuous Drain Current Total Power Dissipation Linear Derating Factor

Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient
3

Value Max. 50

Unit /W

Data and specifications subject to change without notice

20020430

AP4800M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
BVDSS/Tj

Parameter Drain-Source Breakdown Voltage

2

Test Conditions VGS=0V, ID=250uA

Min. 25 1 -

Typ. 0.037

Max. Units 18 33 3 1 25 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA

RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

Static Drain-Source On-Resistance

VGS=10V, ID=9A VGS=4.5V, ID=7A VDS=VGS, ID=250uA VDS=15V, ID=10A

20 -

Gate Threshold Voltage Forward Transconductance

Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C)
o o

VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= 20V ID=9A VDS=15V VGS=5V VDS=15V ID=1A RG=6.2,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz

Gate-Source Leakage Total Gate Charge

2

100 10.9 1.9 7.4 7 10.5 20 17.5 390 245 100 -

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2

Source-Drain Diode
Symbol IS VSD Parameter
Continuous Source Current ( Body Diode )

Test Conditions VD=VG=0V , VS=1.3V Tj=25, IS=2.3A, VGS=0V

Min. -

Typ. -

Max. Units 1.92 1.3 A V

Forward On Voltage

Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad.

AP4800M

40

40

10V 8.0V 6.0V

30 30

10V 8.0V 6.0V

ID , Drain Current (A)

ID , Drain Current (A)

20

20

V GS =4.0V

V GS =4.0V

10

10

T C =25 o C
0 0 1 2 3 4 5 6 0 0 1 2 3 4

T C =150 o C

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

34

1.8

30

I D =9A T C =25

I D =9A
1.6

V GS =10V

26

22

Normalized R DS(ON)
2 3 4 5 6 7 8 9 10 11

1.4

RDS(ON) (m )

1.2

18

14

0.8

10

V GS (V)

0.6 -50 0 50 100 150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

AP4800M

10

9
2.5

ID , Drain Current (A)

PD (W)

1.5

4
1

2
0.5

0 25 50 75 100 125 150

0 0 50 100 150

T c , Case Temperature ( o C)

T c , Case Temperature ( C)

Fig 5. Maximum Drain Current v.s.

Fig 6. Typical Power Dissipation

Case Temperature

100

1
Duty Factor = 0.5

100us Normalized Thermal Response (R thja)

10
0.2

1ms ID (A) 10ms

1

0.1

0.1

0.05

0.02

100ms 1s
0.1

0.01

PDM

0.01
Single Pulse

t T
Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W

10s T C =25 C Single Pulse

0.01 0.1 1 10 100
o

DC
0.001 0.0001 0.001 0.01 0.1 1

10

100

1000

V DS (V)

t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area

Fig 8. Effective Transient Thermal Impedance

AP4800M

f=1.0MHz
16
10000

14

I D =9A V DS =15V

VGS , Gate to Source Voltage (V)

12
1000

10

C (pF)

Ciss Coss
100

Crss

0 0 5 10 15 20 25 30
10 1 6 11 16 21 26

Q G , Total Gate Charge (nC)

V DS (V)

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

100

10

IS(A)

T j =150 o C

T j =25 o C

VGS(th) (V)
1 0 -50

0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

50

100

150

V SD (V)

T j , Junction Temperature( o C)

Fig 11. Forward Characteristic of

Reverse Diode

Fig 12. Gate Threshold Voltage v.s. Junction Temperature

AP4800M

VDS
RD

90%

VDS

TO THE OSCILLOSCOPE 0.6 x RATED VDS

RG

+ 10 V -

S VGS

10% VGS td(on) tr td(off) tf

Fig 13. Switching Time Circuit

Fig 14. Switching Time Waveform

VG
VDS TO THE OSCILLOSCOPE

QG 5V

0.6 x RATED VDS G S

+

QGS

QGD

VGS

1~ 3 mA

IG ID

Charge

Fig 15. Gate Charge Circuit

Fig 16. Gate Charge Waveform