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Features
20A, 500V rDS(ON) = 0.270 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards
Ordering Information
PART NUMBER IRFP460 PACKAGE TO-247 BRAND IRFP460
Symbol
D
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (TAB)
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999
IRFP460
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFP460 500 500 20 12 80 20 250 2.0 960 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances
D LD G LS S
TEST CONDITIONS ID = 250A, VGS = 0V (Figure 10) VGS = VDS, ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = 20V ID = 11A, VGS = 10V (Figures 8, 9) VDS 50V, IDS > 11A (Figure 12) VDD = 250V, ID = 21A, RGS = 4.3 , RD = 12 , VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature
MIN 500 2 20 13 -
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate-Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
VGS = 10V, ID = 21A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14). Gate Charge is Essentially Independent of OperatingTemperature
LS
13
nH
0.50 30
oC/W oC/W
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IRFP460
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier
G D
MIN -
TYP -
MAX 20 80
UNITS A A
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 21A, dISD/dt = 100A/s TJ = 25oC, ISD = 21A, dISD/dt = 100A/s
280 3.8
580 8.1
1.8 1200 18
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25 , Peak IAS = 20A.
20
16
12
0 0 50 100 150 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)
0.5 0.1 0.2 0.1 0.05 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (S) 1 10 t1 t2 PDM
0.02 10-2
10-3 10-5
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40 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 100s 1ms 10ms DC 0 VGS = 10V VGS = 6.0V 32
VGS = 5.5V 24
16
VGS = 5.0V
102
103
50
100
150
200
250
40
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6.0V ID, DRAIN CURRENT(A) VGS = 5.5V
102
32
24
16
VGS = 5.0V
2.5
3.0
2.4
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 11A
1.5
1.8
1.0
1.2
0.5
0.6
VGS = 20V
-40
40
80
120
160
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10000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
C, CAPACITANCE (pF)
1.15
1.05
0.95
0.85
2000
CRSS
0.75
-40
40
80
120
160
102
32
PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V TJ = 25oC
102
24
16 TJ = 150oC 8
32
40
20
16
12
40
80
120
160
200
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0V
IAS 0.01
0 tAV
90%
RG DUT
VDD 0
10% 90%
10%
50%
CURRENT REGULATOR
12V BATTERY
0.2F
50k
Qgd
D G DUT 0
VDS
IG(REF) 0
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IRFP460
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