BU808DFH

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

s s s s s

NEW Fully Plastic TO-220 for HIGH VOLTAGE APPLICATIONS NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400 V ) HIGH DC CURRENT GAIN ( TYP. 150 ) LOW BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184 FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING CREEPAGE PATH > 4 mm TO-220FH
(see page 6)

APPLICATIONS s COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES. DESCRIPTION The BU808DFH is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol V CBO V CEO V EBO IC I CM IB I BM P tot V isol T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature Value 1400 700 5 8 10 3 6 42 2500 -65 to 150 150 Unit V V V A A A A W V
o o

C C

April 2002

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BU808DFH
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 2.98
o

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol I CES I EBO V CE(sat) V BE(sat) h FE Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Diode Forward Voltage Test Conditions V CE = 1400 V V EB = 5 V IC = 5 A IC = 5 A IC = 5 A IC = 5 A I B = 0.5 A I B = 0.5 A V CE = 5 V V CE = 5 V 60 20 Min. Typ. Max. 400 100 1.6 2.1 230 Unit A mA V V

T C = 100 C

ts tf ts tf VF

V CC = 150 V I B1 = 0.5 A V CC = 150 V I B1 = 0.5 A T C = 100 o C IF = 5 A

IC = 5 A V BE(off) = -5 V IC = 5 A V BE(off) = -5 V

3 0.8 2 0.8 3

s s s s V

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

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BU808DFH
Derating Curve DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Power Losses at 16 KHz

Switching Time Inductive Load at 16KHz

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BU808DFH
Switching Time Inductive Load at 16KHZ Reverse Biased SOA

BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 16 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in figure 1. Inductance L1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 1 L (IC)2 = C (VCEfly)2 = 2 f = 2 2 L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace.

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BU808DFH
Figure 1: Inductive Load Switching Test Circuits.

Figure 2: Switching Waveforms in a Deflection Circuit

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BU808DFH

TO-220FH (Fully plastic High voltage) MECHANICAL DATA

DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409

P011W
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BU808DFH

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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