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o angular frequency of the electron o constant spatial periodicity of the wave (related to wavelength) Total energy is composed of potential and kinetic energy throughout the solid . increases with k, .
is assumed to be constant
The parameter A is the normalisation constant & depends on the size of the box: finding the electron at point x is just constant. The wave vector k is a quantum number the momentum of the electron: o o
. The probability of
.
[
( )
The mass of the electrons depends (inversely) on the curvature of the E(k) curve:
The energy spacing between adjacent energy levels is extremely small: we talk about bands rather than discrete energy levels.
Some boundary conditions: solid is an infinite periodic structure (no surfaces), we neglect the exact positions of the ions, the electrons move freely.
DENSITY-OF-SATES FUNCTIONS,
( ) is the total number of states between
( )
at the bottom of the band and the energy E. ( ( ) ( ) ) ) ( )
( ) ( ) (
) (
THERMAL EXCITATION
At T>0K electrons at the Fermi level are being thermally exited and the sharp boundary between occupied and empty states is smeared out thermal broadening. ( ) o ( ) is the probability of occupation: . o At the Fermi energy the probability of finding an electron is equal to a half: ( ) ( )
For the free Fermi electron gas the number of thermally excited electrons is reduced by
The internal energy of a solid also changes when energy flows into other degrees of freedom vibrations (phonons). The relative contributions depends on temperature: An electric current, I is the flow of change: . The net transport of change dependant on electric driving field and effective speed of the charge carriers. Upon application of a constant electric field a charge is accelerated, the electric field thus changes the momentum of the electron (wave vector):
( )
o o o
( )
In k space this acceleration responds to a shift of the Fermi sphere by . Electrons will eventually collide with impurities, lattice imperfections or exchange energy with lattice phonons. If the electric field acts on electrons of charge e- per unit volume, we have a current density (current per area):
The collision time contains all potential sources of electron collisions. For most metals at room temperature, electron/phonon scattering dominates the electrical resistivity. Contribution increases with temperature resistivity of metals increases with temperature. In terms of electron mobility: o with o
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Mobility is a measure for the ease with which the charge carriers (electrons/holes) can transport charge. The fundamental basis for the HALL effect is the Lorentz force which acts on a charge q moving in a perpendicular magnetic field B. Therefore the Hall Coefficient:
As e>0 then should be negative for all metals but some elements respond to the field as though they have positive net charge hole conduction. BUT electrons in a solid do not behave as electrons in a vacuum.
periodicity of the crystal lattice. Assume: ions forms a regular 3D lattice, ions are at rest, and electrons are waves. If ions were moving they could only do so collectively: phonons can interact via scattering which is the main source of ohomic resistance. Scatting of electrons travelling in a periodic lattice is ions, where the angle of incidence is . According to Braggs law, reflection occurs at: Reflection condition Electrons with are no longer free electrons, but reflected at the ion cores. They form standing waves of different energy, where electrons have similar kinetic, but different potential energies. Its wavefunction is a super position of waves. ( o ) [ ( )] [ ( )] A = B since the reflection condition implies that the total wavefunction is composed of equal contributions of travelling waves. ( ) ( )( : ( ) ( )
o o o
Independent of time standing waves. Normalisation: ( ) The freely travelling electron can be shown to have a constant probability of of the maximum for the
fully reflected waves. Band gaps appear in the dispersion relation ( ) a consequence of the interaction of the electrons with the periodic lattice. At the bottom of a band electrons behave free electron-like deviations become more pronounced towards the top of a band. In a band gap, there are no allowed electronic states. Electrons for which are in the first Brillouin zone.
If changes sign, the acceleration of the electron in an applied filed changes direction (at constant E). Charge carriers are holes with a positive mass, their charge being of the opposite sign: +e. Charge transport in a nearly filled band is described in terms of hole transport/conduction. o Holes are vacancies in a sea of electrons under the influence of an electric field these holes move towards the negatively charge electrode. o The magnitude of the effective mass can also vary affecting the band width. Cyclotron Frequency to measure effective mass of particles -
o Sample bought into a strong state magnetic field of strength B. o Lorentz force causes electrons to spiral such that spiral axis is parallel to B. o Angular frequency of depends on the . o Alternating electric field of variable frequency perpendicular to sample is applied. o When the electron resonates with external field power from this driving field is absorbed. Effective mass of particles in solids varies do not necessarily have to be equal: generally .
The periodic function ( ) modulates the local amplitude of the AO: ( ) ( ) Benefits of applying LCAO: chemical perspective,
where ( ) o Fermi energy is in the centre of the band gap no energy levels that could be populated. The probability of finding an electron in the conduction band is dependent on . The carrier concentration ( ), for the conduction band: : ( ) o o The energy of electrons in the conduction band relative to the conduction band edge
is:
concentration of electrons. ( ( ) ) ( ). )
o the same holds true for the holes in the valence band: To get the equilibrium relation: ( ) ( : ( ) ( ( o o If If then then and and ) ) )
is above the centre of the gap is below the centre of the gap.
The electrical conductivity depends on two factors: o Carrier concentration (n/p) increases with T (fermi distribution). o Carrier mobility proportional to collision time, which decreases with increasing T (collisions with thermal phonons). | |
At room temperature the collision time depends on T increases in carrier concentration govern T dependence: the conductivity of semiconductors increases with temperature due to increasing carrier concentration. o Metals o Semi-conductors o Insulators at this scale Conductivity of a semiconductor can be increased by the deliberate addition of impurity atoms providing excess electrons (n-doping) or are electron deficient (p-doping). Impurity atoms are built into the lattice - .e.g. substituted into place of regular atoms. Compared to the neighbouring Si atoms, As carriers one nuclear charge more excess electron described as though it revolved around hydrogen like single charged nucleus. Bohrs model of the H atom: o Excess charge is screened by the solid of dielectric constant
o o
Excess charge has an effective mass Ionization means excitation to the bottom of the conduction band (not to infinity).
Binding energy for the electron moving from the conduction band into the donor state:
Binding energy is negative energy level must be below the conduction band edge. Thermal excitation into the conduction band now occurs from the donor levels. For p-type doping excitation of the electrons from the valence band into the acceptor levels. o B carries one nuclear charge less. The missing electron as positively charged hole revolving around an effectively negatively charged nucleus. o Binding energy is now relative to the top of the valence band: o
Thermal excitation into the acceptor levels occurs from the valence band. We assume low doping levels: o Low T: fermi level between and charge carrier concentration and conductivity increase with T. o Saturation Regime: fermi level moves towards the centre of the band carrier concentration constant as doped levels are depleted of electrons. o Intrinsic Regime: donor levels no longer important for carrier concentration fermi level in the centre of the band gap carrier concentration rises with T. o
Direct Band Gap Lowest energy transition occurs at Efficient absorption/emission of light Good material for optoelectronic devices
If we ignored the existence of excitons, the minimum energy required to create an electron/hole pair (intrinsic semi-conductor) would be the band gap . Because the interaction is favourable the energy is reduced by:
At energies just below we can create excitons at very specific frequencies of incoming light. Located at the inset of light absorption due to the excitation of valence electrons into the conduction band.
Photo detector: photons can be used to excite electrons from the VB to the CB leading to an increase in conductivity photo conductivity.
Light emitting diode (LEDs): emission of light occurs when conduction electron recombines with a hole. Requires direct gap semi-conductor material.