P-CHANNEL 60V - 0.

18 - 12A TO-220/TO-220FP STripFET II POWER MOSFET

Table 1: General Features
TYPE STP12PF06 STF12PF06

STP12PF06 STF12PF06

Figure 1:Package
RDS(on) < 0.20 < 0.20 ID 12 A 12 A

VDSS 60 V 60 V

TYPICAL RDS(on) = 0.18 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION

3 1 2
1 2

TO-220

TO-220FP

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility APPLICATIONS MOTOR CONTROL DC-DC & DC-AC CONVERTERS

Figure 2: Internal Schematic Diagram

Table 2: Order Codes

PART NUMBER STP12PF06 STF12PF06 MARKING P12PF06 F12PF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE

Table 3: ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) Tstg Tj Parameter STP20PF06 Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature 60 60 20 12 8.4 48 60 0.4 6 200 -55 to 175
(1) ISD 12A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD= 25V

Value STF20PF06

Unit V V V A A A W W/C V/ns mJ C

8 5.6 32 225 0.17

() Pulse width limited by safe operating area. NOTE:For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.

March 2005

Rev. 2.0

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Table 4: THERMAL DATA
TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 TO-220FP 5.35 C/W C/W C

ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)

Table 5: OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20V Min. 60 1 10 100 Typ. Max. Unit V A A nA

Table 6: ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 A ID = 10 A Min. 2 Typ. 3.4 0.18 Max. 4 0.20 Unit V

Table 7: DYNAMIC
Symbol gfs (2) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 6 A Min. 2.5 Typ. 6 850 230 75 Max. Unit S pF pF pF

VDS = 25V f = 1 MHz VGS = 0

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ELECTRICAL CHARACTERISTICS (continued)

Table 8: SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7 (Resistive Load, Figure 19) VDD= 48 V ID= 12 A VGS= 10 V Min. Typ. 20 40 16 4 6 21 Max. Unit ns ns nC nC nC

Table 9: SWITCHING OFF

Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7, (Resistive Load, Figure 19) Min. Typ. 40 10 Max. Unit ns ns

Table 10: SOURCE DRAIN DIODE

Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
1.5 %.

Test Conditions

Min.

Typ.

Max. 10 40

Unit A A V ns nC A

ISD = 12 A

VGS = 0 100 260 5.2

2.5

ISD = 12 A di/dt = 100A/s Tj = 150C VDD = 30 V (see test circuit, Figure 21)

(1 )Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 s, duty cycle

Figure 3: Safe Operating Area for TO-220

Figure 4: Safe Operating Area for TO-220FP

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Figure 5: Thermal Impedance Figure 6: Thermal Impedance for TO-220FP

Figure 7: Output Characteristics

Figure 8: Transfer Characteristics

Figure 9: Transconductance

Figure 10: Static Drain-source On Resistance

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Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations

Figure 13: Normalized Gate Threshold Voltage vs Temperature

Figure 14: Normalized on Resistance vs Temperature

Figure 15: Source-drain Diode Forward Characteristics

Figure 16: Normalized Breakdown Voltage Temperature

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Figure 17: Unclamped Inductive Load Test Circuit
Figure 18: Unclamped Inductive Waveform

Figure 19: Switching Times Test Circuits For Resistive Load

Figure 20: Gate Charge test Circuit

Figure 21: Test Circuit For Inductive Load Switching And Diode Recovery Times

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STP12PF06 STF12PF06 TO-220 MECHANICAL DATA

DIM. A C D E F F1 F2 G G1 H2 L2 L3 L4 L5 L6 L7 L9 DIA 13 2.65 15.25 6.20 3.50 3.75 mm. MIN. 4.4 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 16.40 28.90 14 2.95 15.75 6.60 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 TYP. MAX. 4.6 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 MIN. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 1.137 0.551 0.116 0.620 0.260 0.154 0.151 inch. TYP. TYP. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409

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TO-220FP MECHANICAL DATA

DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409

L3 L6 L7
F1

G1

E F2

1 2 3 L2 L4

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Table 11:Revision History
Date
March 2005 March 2005

Revision
1.0 2.0 FIRST ISSUE MINOR REVISION

Description of Changes

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners.

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