PERALATAN AKTIF GELOMBANG MIKRO

PERALATAN AKTIF GELOMBANG MIKRO

Peralatan aktif tersebut berasal dari solidstate yang digunakan untuk menjalankan fungsi peralatan seperti : suitsing, penguat, mixer, filtering, dsb Beberapa solidstate tsb a.l. : Bipolar junction transistor (BJT), silicon metal-oxide semi conductor field effect transistor (MOSFET), GaAs metal semiconductor field effect transistor (MESFET), high electron mobility transistor (HEMT), hetero junction bipolar transistor (HBT),dsb

BEBERAPA DEVICES GELOMBANG MIKRO

BIPOLAR TRANSISTORS GaAsFETs HEMT High Electron Mobility Transistors Impatt Diodes PIN Diodes Varactor Diodes YIG Devices (Yttrium-Iron Garnet)

Bipolar Microwave Transistors

Conventional bipolar transistors are not suitable for microwave frequencies. Electrons move faster than holes. Component leads introduce elevated reactance. XL increases and XC decreases therefore collector feedback becomes worse as frequency increases. Transit time and mobility of carriers. As transit time approaches signal period phase shifts occur.

PERBAIKAN TERHADAP BIPOLAR TRANSISTOR

REMEDIES (1): Interdigital design of emitter and base minimizes capacitances. Gallium arsenide. Faster than silicon. N type GaAsFET. Why N type? Flat component leads.

REMEDIES (2).: Low noise design considerations: * Planar and epitaxial methods of construction use diffusion and surface passivation to protect surfaces from contamination as opposed to diffusion method of mesa structure implementing acid etching. * Shot noise is proportional to the square of current therefore operate at moderate Ic. * Thermal noise is reduced at lower power levels. With interdigital base design Rb is low therefore lower voltage drop and less power.

FET Microwave Transistors

Designed to minimize capacitances and transit time NPN bipolar and N channel FETs preferred because free electrons move faster than holes Gallium Arsenide has greater electron mobility than silicon

 Monolithic Microwave Integrated Circuit (MMIC)

Photograph of a monolithic integrated X-band power amplifier. This circuit uses eight heterojunction bipolar transistors with power dividers/combiners at the input and output to produce 5 watts.

Gunn Device (TED)

Slab of N-type GaAs (gallium arsenide) Sometimes called Gunn diode but has no junctions Has a negative-resistance region where drift velocity decreases with increased voltage This causes a concentration of free electrons called a domain Ditemukan oleh thn 1963,Mr.Gunn

IMPATT Diode
IMPATT stands for Impact Avalanche And Transit Time Operates in reverse-breakdown (avalanche) region Applied voltage causes momentary breakdown once per cycle This starts a pulse of current moving through the device Frequency depends on device thickness Ditemukan thn 1965,Mr Johnson

PIN Diode
P-type --- Intrinsic --- N-type Used as switch and attenuator Reverse biased - off Forward biased - partly on to on depending on the bias

Varactor Diode
Lower frequencies: used as voltage-variable capacitor Microwaves: used as frequency multiplier
this takes advantage of the nonlinear V-I curve of diodes

YIG Devices
YIG stands for Yttrium - Iron - Garnet
YIG is a ferrite

YIG sphere in a dc magnetic field is used as resonant cavity Changing the magnetic field strength changes the resonant frequency