AMERICAN INTERNATIONAL UNIVERSITY - BANGLADESH

Dhaka, Bangladesh

Faculty of Engineering
COURSE OUTLINE I. Course No & Title II. Nature (Core/Major/Elective) III. Academic Term IV. Credit V. Course teacher: Teachers Name Section Campus and room Day and time: : : : : : : : : :

EEE 5019: Laser Theory

Core Spring 2012-13 3.00 Rinku Basak A 4, 434 Monday & Wednesday,

6:30 pm 8:00 pm

VI - Course Descriptions: Black body radiation and the Planck law, Cavity radiation and cavity modes, Boltzmann distribution and thermal equilibrium Introduction to Laser: Homojunction Structure, Single-Heterojunction Structure and DoubleHeterojunction Structure Basic principle of a Semiconductor Laser Different types of Lasers: Emission dependent: Edge Emitting Lasers and Surface Emitting Laser, Wavelength dependent: Short wavelength Lasers and Long wavelength Lasers Intrinsic and Extrinsic semiconductor materials: p-type and n-type materials Introduction to binary, ternary and quaternary materials; and selection of materials for designing semiconductor lasers Direct and indirect materials Recombination mechanisms in a Semiconductor Laser: Energy band diagram of a Semiconductor Laser, Band Theory: Conduction Band (CB) and Valence Band (VB), Absorption of Radiation, Emissions of Radiation: Spontaneous emission and Stimulated emission Theory of Semiconductor Lasers: Rate equations of a Semiconductor Laser: Rate of change of carrier density and Rate of change of photon density, Conditions for lasing of a Semiconductor Laser, Calculation of threshold current of a laser and Calculation of output power of a laser Analysis of Modulation performance of Semiconductor Lasers: calculations of resonance frequency and bandwidth Semiconductor Devices: Electron energy levels in various materials, Energy levels in a degenerate semiconductor, Absorption and emission in a semiconductor: Homojunction laser structure and Heterojunction laser structure, Intrinsic and Extrinsic materials: p- and n-type semiconductors, LED pn junction at equilibrium and at forward bias Characteristics of coherent light, Rate equations and criteria for lasing, Laser gain, Linewidth, Thresholds for lasing, Calculating threshold gain Three- and four-level lasers, Thermal population effects, Depopulations of lower energy levels in four level lasers Rate equation analysis for atomic transitions, Rate equation analysis for three- and four-level lasers Saturation, Required pump power and efficiency, Output power Q-switching: intracavity switches, energy storage in laser media Modelocking, line broadening mechanisms: homogeneous and inhomogeneous broadening Visible Gas Lasers: He-Ne and Ion lasers, UV Gas Lasers: Nitrogen and excimer lasers, Infrared Gas Lasers: CO2 laser, Solid-State Lasers: ruby and YAG (NEODYMIUM) lasers 1

VII Objectives: The main objective of this course is to promote the knowledge of the students about the AC circuits, its applications and formulating their solutions in the field of electrical engineering. VIII Topics to be covered:
Topics Specific Objective(s) Time Frame Suggested Activities

(i) Black body radiation and the Planck law, Cavity radiation and cavity modes, Boltzmann distribution and thermal equilibrium (ii) Introduction to Laser: Homojunction Structure, SingleHeterojunction Structure and Double-Heterojunction Structure (i) Basic principle of a Semiconductor Laser Different types of Lasers: Emission dependent: Edge Emitting Lasers and Surface Emitting Laser, Wavelength dependent: Short wavelength Lasers and Long wavelength Lasers Direct and indirect materials, Recombination mechanisms in a Semiconductor Laser: Energy band diagram of a Semiconductor Laser, Band Theory: Conduction Band (CB) and Valence Band (VB), Absorption of Radiation, Emissions of Radiation: Spontaneous emission and Stimulated emission

1. To learn the basics of semiconductor lasers and also to learn about the design, principle and applications of the lasers. 2. To study the characteristics of different types of semiconductor materials. 3. To introduce with different types of semiconductor lasers and researches on the same area.

1st Week

2nd Week

Students should solve the problems from the text book and from the reference book related to the topics covered in class. Group discussion may also be effective in solving critical problems.

Teaching Strategy(s) 1. Details idea about the theory relating to the subject matters will be given in the class. Derivations are done on board elaborately so that all students can understand how the equation comes. Some carefully chosen typical problems are solved in board so that students can solve the other related problems by themselves.

3rd Week

2. A set of lecture notes, tutorial examples, with subsequent discussions and explanations together with suggested reading will support and

Intrinsic and Extrinsic semiconductor materials: p-type and n-type materials, Introduction to binary, ternary and quaternary materials; and selection of materials for designing semiconductor lasers (ii) Theory of Semiconductor Lasers: Rate equations of a Semiconductor Laser: Rate of change of carrier density and Rate of change of photon density, Conditions for lasing of a Semiconductor Laser, Calculation of threshold current of a laser and Calculation of output power of a laser Analysis of Modulation performance of Semiconductor Lasers: calculations of resonance frequency and bandwidth Semiconductor Devices: Electron energy levels in various materials, Energy levels in a degenerate semiconductor, Absorption and emission in a semiconductor: Homojunction laser structure and Heterojunction laser structure, Intrinsic and Extrinsic materials: pand n-type semiconductors, LED pn junction at equilibrium and at forward bias Characteristics of coherent light, Rate equations and criteria for lasing, Laser gain, Linewidth, Thresholds for lasing, Calculating threshold gain
(i)

4th Week

direct the students in their own study. 3. Hard copies of class notes will be provided into the classroom as well as will be uploaded to the web. 4. Few number of assignments will be given to the students based on the classes to test their class performance.

5th Week

QUIZ
6th Week

7th Week

Midterm Exam.
Three- and four-level lasers, Thermal population effects, Depopulations of lower energy levels in four level lasers Rate equation analysis for atomic transitions Rate equation analysis for threeand four-level lasers

8th Week 9th Week

10th week 11th Week

Saturation, Required pump power and efficiency, Output power Q-switching: intracavity switches, energy storage in laser media Visible Gas Lasers: He-Ne and Ion lasers, UV Gas Lasers: Nitrogen and excimer lasers, Infrared Gas Lasers: CO2 laser, Solid-State Lasers: ruby and YAG (NEODYMIUM) lasers

12th Week 13th week

QUIZ
14h Week 15h Week

Final Term Exam.

16th Week

IX - Course Requirements: At least 80% class attendance is necessary to sit for the exam. If any assignment is given, students have to submit the assignment before the deadline set by the teacher. X Evaluation Process: Final Grade / Grand Total will be calculated from Mid-term (40%) + Final-term (60%) examinations. Marks distribution of each term is given bellow: 1. Term Exam 40% 2. Attendances and Class Performance 20% 3. Class Test/Assignments 40% Total 100%

XI Textbook/ Reference Materials Text/reference books: 1. Mark Csele, Fundamentals of Light Sources and Lasers, John Wiley & Sons, Inc., Hoboken, New Jersey, 2004. 2. L.A. Coldren and S.W. Corzine, Diode Lasers and Photonic Integrated Circuits, John Wiley and Sons, New York, 1995. 3. J. M. Senior, Optical Fibre Communications, Prentice Hall International, Englewood Cliffs, 1988. 4. Amnon Yariv, Optical electronics, 4th edition, Pasadena, California, January 1991. 5. Kelin J. Kuhn, Laser Engineering, Prentice-Hall, New edition. 6. Joseph T. Verdeyen, Laser Electronics 3/E, Prentice-Hall. 7. Amnon Yariv and Pochi Yeh, Photonics, Sixth Edition, Oxford Univ. Press.

Prepared by: Mr. Rinku Basak Head, Graduate Program Assistant Professor Dept. of EEE Faculty of Engineering AIUB