FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
September 2007
QFET
FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
Features
12A, 600V, RDS(on) = 0.65 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 21pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
G G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
Absolute Maximum Ratings

Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FQP12N60C
12 7.4 48
FQPF12N60C
12* 7.4* 48*
Unit
V A A A V mJ A mJ V/ns
600
30 870 12 22.5 4.5 225 1.78 -55 to +150 300 51 0.41
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC RJS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FQP12N60C
0.56 0.5 62.5
FQPF12N60C
2.43 -62.5
Unit
C/W C/W C/W
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FQP12N60C / FQPF12N60C Rev. B1
Package Marking and Ordering Information

Device Marking
FQP12N60C FQPF12N60C
Device
FQP12N60C FQPF12N60C
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
-
Tape Width
-
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
Notes:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 6A VDS = 40V, ID = 6A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -----2.0 ------
Typ
-0.5 -----0.53 13 1760 182 21 30 85 140 90 48 8.5 21 ---420 4.9
Max Units
--1 10 100 -100 4.0 0.65 -2290 235 28 70 180 280 190 63 --12 48 1.4 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC A A V ns C
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 300V, ID = 12A RG = 25

(Note 4, 5)
------(Note 4, 5)
VDS = 400V, ID = 12A VGS = 10V
------
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 12A VGS = 0V, IS = 12A dIF/dt =100A/s
(Note 4)
--
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 12A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
Typical Performance Characteristics

Figure 1. On-Region Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Figure 2. Transfer Characteristics
10
ID, Drain Current [A]
10
150 C -55 C
o
25 C
10
0
10
Notes : 1. 250s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250s Pulse Test
10
-1
10
10
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
RDS(ON) [ ], Drain-Source On-Resistance
IDR, Reverse Drain Current [A]
1.5
10
VGS = 10V
1.0
10
150 25
-1
0.5
VGS = 20V
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250s Pulse Test
10
15
20
25
30
35
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics

3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics

12
VDS = 120V
10
VGS, Gate-Source Voltage [V]
VDS = 300V VDS = 480V
Capacitance [pF]
Ciss Coss
2000 1500 1000 500 0 -1 10
Crss
Notes ; 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 12A
10
10
10
20
30
40
50
QG, Total Gate Charge [nC]
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature

3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 6.0 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area for FQP12N60C
Figure 9-2. Maximum Safe Operating Area for FQPF12N60C
10
Operation in This Area is Limited by R DS(on)
10
Operation in This Area is Limited by R DS(on)
10 s 100 s
10 s 100 s
10
1 ms 10 ms 100 ms DC
10
10
10
1 ms 10 ms 100 ms DC
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
10
-1
Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
10
-2
10
10
10
10
10
-2
10
10
10
10
Figure 10. Maximum Drain Current vs. Case Temperature

14 12 10 8 6 4 2 0 25
50
75
100
125
150
TC, Case Temperature []
Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FQP12N60C
10
Z JC(t), Thermal Response
D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
10
-1
N o te s : 1 . Z J C (t) = 0 .5 6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
Z JC(t), Thermal Response
10
D = 0 .5 0 .2 0 .1
10
-1
0 .0 5 0 .0 2 0 .0 1
N o te s : 1 . Z J C (t) = 2 .4 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
PDM t1
s in g le p u ls e
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CROSSVOLT CTL Current Transfer Logic EcoSPARK
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
10 FQP12N60C / FQPF12N60C Rev. B1

FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

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FQP12N60C / FQPF12N60C: 600V N-Channel MOSFET

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Copyright:

Available Formats

FQP12N60C / FQPF12N60C 600V N-Channel MOSFET

Absolute Maximum Ratings

30 870 12 22.5 4.5 225 1.78 -55 to +150 300 51 0.41

*Drain current limited by maximum junction temperature

2007 Fairchild Semiconductor Corporation

FQP12N60C / FQPF12N60C Rev. B1