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Basics of Etching technology Wet etching -----dielectrics, semiconductors, & metal -----Isotropic & anisotropic etching I t i i t i t hi Dry etching (RIE) Electrochemical polishing
Etching
Three steps in etching process? Two kinds of Etching?
Etching profiles
dry & wet etching Gas phase (chemical, and physical) Liquid phase (chemical)
Profiles: isotropic & anisotropic Applications: Si, Silicon nitride, silicon dioxide, metal Controls: doping, electrochemical, film quality, mask materials
Profiles: isotropic & anisotropic Applications: Si, Silicon nitride, silicon dioxide, metal Controls: doping, electrochemical, film quality, mask materials
Buffered HF Etching g
7:1 NH4F/HF gives about 1000 /min etch rate at room temperature
SiO2 + 6HF = H2SiF6 + 2H2O Types of silicon dioxide etchants: 49% HF - fast removal of oxide, poor photoresist adhesion BHF - medium removal of oxide, with photoresist mask Dilute HF - removal of native oxide, cleans, surface treatments f f HF/HCl or HF/Glycerin mixtures special applications
Etching tools - HF
Fluoroware A182-60MB or PerFluoroAlkoxy (Teflon) g High resistance to chemicals and temperature Can be used in wet chemistry processes (RCA clean, BOE etch, wet nitride etch, wet aluminum etch)
HF Bench
Base: KOHetch NaOH etch EDP (Ethylene Diamine Pyrocatechol) etch TMAH (Tetra Methyl Ammonium Hydroxide) etch TMAH
Water rinse
Orientation Primary flat orientation Secondary flat locations <111> p-type <100> p-type <111> n-type <100> n-type <110> no secondary flat 90 clockwise from primary flat 45 clockwise from primary flat 180 clockwise from primary flat
Anisotropic Wet etching Convex corners are undercut Concave corners stop at [111] intersection
100
Etching selectivity
When SiO2 i used as a masking layer Wh is d ki l with a KOH solution both temperature and concentration should be chosen as low p as possible. KOH etch rate is about 50 to 55 m/min at 72 C and KOH concentrations between g 10 and 30 weight %. The Si/SiO2 etch ratio is 1000:1 for 10% KOH at 60 C, at 30% it drops to 200:1. The relative etch rate of doped silicon to lightly doped silicon decreases for doping concentrations above 1E19 and at 1E20 the relative etch rate is 1/100 for 10% concentration. (on (100) wafer the angle is 50.6) Si3N4 is the perfect masking material for KOH etch solution. The etch rate for Silicon Nitride appears to be zero.
Doping
Revisit:
(1)
In Boron doped Si, particularly the degenerated doped Si (p++ - Si), Fermi level close to valance band and many, many holes in Ev y, y Transfer to conduction band Ec recombination Ev
Si + 2
(OH)-
= Si(OH)2 +
2+
4e-
Si
[HO Si OH ]2+
4H2O +
4e- = 4(OH)-
+ 2H2
(2)