IRFD120

Data Sheet July 1999 File Number

2315.3

1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power eld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17401.

Features
1.3A, 100V rDS(ON) = 0.300 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER IRFD120 PACKAGE HEXDIP BRAND IRFD120

Symbol
D

NOTE: When ordering, use the entire part number.

G

Packaging
HEXDIP

DRAIN GATE SOURCE

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRFD120
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRFD120 100 100 1.3 5.2 20 1.0 0.008 36 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC
oC oC

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 125oC.

Electrical Specications
PARAMETER Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current

TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured From the Drain Lead, 2mm (0.08in) from Package to Center of Die Modified MOSFET Symbol Showing the Internal Devices Measured From the Source Inductances D Lead, 2mm (0.08in) from Header to Source Bonding LD Pad
G LS S

TEST CONDITIONS ID = 250A, VGS = 0V (Figure 9) VGS = VDS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON) Max, VGS = 10V VGS = 20V ID = 0.6A, VGS = 10V (Figures 7, 8) VDS > ID(ON) x rDS(ON)MAX , ID = 0.6A (Figure 11) VDD = 0.5 x Rated BVDSS, ID 1.3A, VGS = 10V, RG = 9.1 RL = 38.5 for VDD = 50V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 1.3A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 13) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1MHz (Figure 10)

MIN 100 2.0 1.3 0.9 -

TYP 0.25 1.0 20 35 50 35 11 6.0 5.0 450 200 50 4.0

MAX 4.0 25 250 500 0.30 40 70 100 70 15 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

On-State Drain Current (Note 2) Gate Source Leakage Drain Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

Internal Source Inductance

LS

6.0

nH

Thermal Resistance Junction to Ambient

RJA

Free Air Operation

120

oC/W

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IRFD120
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D

MIN -

TYP -

MAX 1.3 5.2

UNITS A A

Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = 1.3A, VGS = 0V (Figure 12) TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/s TJ = 150oC, ISD = 1.3A, dISD/dt = 100A/s

280 1.6

2.5 -

V ns C

2. Pulse test: pulse width 300s, duty cycle 2%. 3. VDD = 25V, starting TJ = 25oC, L = 32mH, RG = 25, peak IAS = 1.3A.

Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8

Unless Otherwise Specied

1.5

ID, DRAIN CURRENT (A) 0 25 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) 150

1.2

0.9

0.6 0.4

0.6

0.2 0

0.3

0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE

10

20 VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 9V VGS = 8V 12 VGS = 7V 8 VGS = 6V 4 VGS = 5V VGS = 4V 0 100 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50

ID, DRAIN CURRENT (A)

100s 1ms 10ms

0.1

OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON)

100ms

0.01

TJ = MAX RATED 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V)

DC

0.1

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

ID, DRAIN CURRENT (A)

16

FIGURE 4. OUTPUT CHARACTERISTICS

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IRFD120 Typical Performance Curves

10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 9V 6 VGS = 6V

Unless Otherwise Specied (Continued)

IDS(ON), DRAIN TO SOURCE CURRENT (A) 20

VGS = 8V VGS = 7V

ID, DRAIN CURRENT (A)

16

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS > ID(ON) x rDS(ON)MAX

12

TJ = -55oC oC TJ = 25 TJ = 125oC

4 VGS = 5V 2 VGS = 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5

10

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. SATURATION CHARACTERISTICS

FIGURE 6. TRANSFER CHARACTERISTICS

0.8 2s PULSE TEST NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE ()

2.2

0.6

VGS = 10V

1.8

PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 0.6A

1.4

0.4

1.0

0.2

VGS = 20V

0.6

0.2 0 10 20 30 ID, DRAIN CURRENT (A) 40 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC)

NOTE:

Heating effect of 2s pulse is minimal. FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

1.25 IDS = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.15 C, CAPACITANCE (pF)

1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD

800

1.05

600 CISS 400 COSS CRSS

0.95

0.85

200

0.75 -40

40

80

120

160

10

TJ , JUNCTION TEMPERATURE (oC)

40 30 20 VDS, DRAIN TO SOURCE VOLTAGE (V)

50

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

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IRFD120 Typical Performance Curves

5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX

Unless Otherwise Specied (Continued)

2 ISD, SOURCE TO DRAIN CURRENT (A)

TJ = -55oC TJ = 25oC TJ = 125oC

PULSE DURATION = 80s

gfs, TRANSCONDUCTANCE (S)

DUTY CYCLE = 0.5% MAX 102 5 2 10 5 2 0.1 TJ = 150oC TJ = 25oC

0 0 4 8 12 ID , DRAIN CURRENT (A) 16 20

2 3 1 VSD, SOURCE TO DRAIN VOLTAGE (V)

FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE

20 ID = 5.2A VGS, GATE TO SOURCE (V) VDS = 20V VDS = 50V VDS = 80V 10

15

0 0 2 4 6 QG, GATE CHARGE (nC) 8 10

FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD

0V

IAS 0.01

0 tAV

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

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IRFD120 Test Circuits and Waveforms

(Continued)

tON td(ON) tr RL VDS

+

tOFF td(OFF) tf 90%

90%

RG DUT

VDD 0

10% 90%

10%

VGS VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 16. SWITCHING TIME TEST CIRCUIT

VDS (ISOLATED SUPPLY)

FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS

12V BATTERY

0.2F

50k 0.3F

DUT 0

Ig(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0

FIGURE 18. GATE CHARGE TEST CIRCUIT

FIGURE 19. GATE CHARGE WAVEFORMS

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