GLA University Mathura Semiconductor material Device Tutorial#1 1. Explain electrical absorption with energy band diagram. 2.

Derive the expression for intensity of light when it will transmitted through sample thickness L. 3. What do you mean by photo luminance explain. 4. Explain the phenomenon of electroluminescence. derive the expression for carrier life time. 5. What is photoconductivity explain. 6. Derive the formula for photoconductivity in terms of carrier life time. 7. What do you mean by direct and indirect semiconductor? 8. Explain direct indirect recombination. 9. What is difference between drift and diffusion?
10.

What is contact potential explain.

GLA University Mathura Semiconductor material Device Tutorial#2

1

. Derive the expression for contact potential.

2. What is Fermi energy level explains. 3. What is direct and indirect recombination explains. 4. Discuss the continuity equation. 5. Derive the Einstein equation. 6. What do you mean by diffusion length derive. 8. Explain Haynes Shockley experiment. 9. A semiconductor in thermal equilibrium has hole concentration of po=1016cm-3 and intrinsic concentration of ni =1010cm-3. the minority carrier life time is 210-7sec (I)Determine thermal equilibrium recombination rate of electron. (II)Determine change in recombination rate of electron if an excess concentration of electron n=1012/cm3 exciting .

10. Define the diffusion length and derive the hole concentration as a function of x.

GLA University Mathura Semiconductor material Device Tutorial#3

1.Define

the contact potential and derive the formula for contact potential in terms of NA and ND 2 The hole concentration in semiconductor specimen is shown in Fig2: Find the value of hole current density if diffusion coefficient is Dp. 3. Calculate the built in potential barrier in p-n junction .Consider a silicon p-n junction at T =300 K with doping density NA=1018 , ND=1015/cm3, assume ni = 1.5x1010/cm3. 4. What is the continuity equation discuss in brief. 5. what is the Poissons equation? Find the width of transition region W in terms of contact potential and doping concentration NA and ND. Consider p-n junction is unbiased. 6. Assume that a photo conductor in shape of bar of a length L and area A has constant voltage V applied. And it is illuminated such that gop EHP /cm3-s are generated uniformly throughout. If n and p are mobility of electron and hole and n and p are lifetime for electron and hole . Show that I =qgopLA(n + p )/ t . where t is transit time of electron drifting down the length of bar.

GLA University Mathura Semiconductor material Device Tutorial#4

1. Explain metal semiconductor junction with energy band diagram. 2. What is schottky barrier? Explain 3. What is basics difference between rectifying contact and ohmice contact? 4. Explain the operation of photodiode draw the characteristics. 5. Explain the operation of solar cell and draw the characteristics. 6. Explain the operation of photo detector and draw the characteristics. 7. Explain the operation of LED and draw the characteristics. 8. Explain the operation of LASER and draw the characteristics 9. What do you mean by population inversion at junction explain.

GLA University Mathura Semiconductor material Device Tutorial#5

10.

Explain the operation of tunnel diode with energy band

diagram and draw the characteristics. 11. 12. 13. Why tunnel diode is negative resistance diode explains. Tunnel diode can be used as oscillator how? Explain the operation of IMPATT diode and draw the

characteristics. 14. 15. What is Gunn Effect explains. Conductivity of n-type GaAs Gunn diode?

Given that Electron density is n=1018cm-3, Electron density at lower valley is nl=1010 cm-3, Electron density at upper valley is nu=108 cm-3, temperature T =300K. 16. Characteristics of n- type GaAs Gunn diode Threshold field Eth = 2800V/cm, Applied field E= 3200V/cm, Device length L=10m, doping concentration no=21014cm-3 operating frequency f = 10GHz then find (a) electron drift velocity (b) current density (c) negative electron mobility. 17. For transit time domain mode, the domain velocity is equal to

the drift velocity and is about 107cm/s. determine drift length of the diode at frequency of 8 GHz.

GLA University Mathura Semiconductor material Device Tutorial#6

1. Find the concentration of electrons and holes as a function of x in base region of BJT. 2. (a)Find the expression for current I for the transistor connection shown if =1. (b) How does the current I divide between the base lead and collector lead? 3. Describe charge control analysis of BJT transistor. 4. Describe the drift phenomenon in base region of BJT. 5. Describe base narrowing in BJT. 6. What is avalanche break down? Explain. 7. Describe the operating principle n-type enhancement MOSFET.

GLA University Mathura Semiconductor material Device Tutorial#7

1. Derive the relation between IDS & VDS for n-type enhancement MOSFET in saturation region and ohmice region. 2. Describe the operating principle n-type depletion MOSFET. 3. Can you operate n-type depletion MOSFET as a n-type enhancement type MOSFET? 4. In an enhancement mode n-type MOS the device parameter were given as VGS = 3V, Vds =5V, Vth= 1V nCo =25A/V2,ID =0.25mA find out value of aspect ratio of transistor and also obtained length and width of channel. 5. Describe the operating principle of n-type GaAs MESFET. 6. Describe the operating principle of high electron mobility transistor.