DISCRETE SEMICONDUCTORS

DATA SHEET

BFG135 NPN 7GHz wideband transistor

Product specication File under discrete semiconductors, SC14 1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter
age

BFG135

1
Top view

3
MSB002 - 1

Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT GUM PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain up to Ts = 145 C (note 1) IC = 100 mA; VCE = 10 V; Tj = 25 C IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo output voltage open base CONDITIONS open emitter 80 MIN. 130 7 16 12 850 TYP. MAX. 25 15 150 1 GHz dB dB mV UNIT V V mA W

dim = 60 dB; IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; f(p+qr) = 793.25 MHz

LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. 1995 Sep 13 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 145 C (note 1) open emitter open base open collector CONDITIONS 65 MIN. MAX. 25 15 2 150 1 150 175 UNIT V V V mA W C C

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain CONDITIONS IE = 0; VCB = 10 V IC = 100 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 1 MHz IC = 100 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C Vo d2 output voltage second order intermodulation distortion note 1 note 2 IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 C; f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz IC = 90 mA; VCE = 10 V; VO = 50 dBmV; Tamb = 25 C; f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz Notes 1. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = 60 dB; fp = 445.25 MHz; Vq = Vo 6 dB; fq = 453.25 MHz; Vr = Vo 6 dB; fr = 455.25 MHz; measured at f(p+qr) = 443.25 MHz. 2. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = 60 dB; fp = 795.25 MHz; Vq = Vo 6 dB; fq = 803.25 MHz; Vr = Vo 6 dB; fr = 805.25 MHz; measured at f(p+qr) = 793.25 MHz. MIN. 80 TYP. 130 2 7 1.2 7 16 12 900 850 58 PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 145 C (note 1)

BFG135

THERMAL RESISTANCE 30 K/W

MAX. 1

UNIT A pF pF pF GHz dB dB mV mV dB

53

dB

1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

handbook, full pagewidth

,,
 ,  

L6 C4 C5 VBB L5 C3 L3 C6 R1 R2 input 75 C1 L1 L2 L4 DUT C7 C2 R3 R4
MBB284

VCC

output 75

Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.

List of components (see test circuit) DESIGNATION C1, C3, C5, C6 C2, C7 C4 (note 1) L1 L2 L3 (note 1) L4 L5 L6 (note 1) R1 R2 (note 1) R3, R4 Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2); thickness 1 1 16 inch; thickness of copper sheet 32 inch. DESCRIPTION multilayer ceramic capacitor multilayer ceramic capacitor miniature ceramic plate capacitor microstripline microstripline 1.5 turns 0.4 mm copper wire microstripline Ferroxcube choke 0.4 mm copper wire metal lm resistor metal lm resistor metal lm resistor 75 5 25 10 200 27 H nH k length 30 mm 2322 180 73103 2322 180 73201 2322 180 73279 VALUE 10 1 10 75 75 UNIT nF pF nF length 7 mm; width 2.5 mm length 22mm; width 2.5 mm int. dia. 3 mm; winding pitch 1 mm length 19 mm; width 2.5 mm 3122 108 20153 DIMENSIONS CATALOGUE NO. 2222 590 08627 2222 851 12108 2222 629 08103

1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

handbook, full pagewidth

VBB C3 VCC C5

R1

R3 L3

L5

75 input

C1 L1 C2 R2 R4 L6 C4 L2

C6 L4 C7

75 output

MBB299

andbook, full pagewidth

80 mm

60 mm

MBB298

handbook, full pagewidth

MBB297

Fig.3 Intermodulation distortion test printed-circuit board.

1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

MBB300

MBB294

handbook, halfpage P

1.2

tot (W)

handbook, halfpage

160

1.0

h FE

0.8

120

0.6

0.4

80

0.2

0 0 50 100 150 Ts 200 ( o C)

40 0 40 80 120 160 I C (mA)

VCE = 10 V; Tj = 25 C.

Fig.5 Fig.4 Power derating curve.

DC current gain as a function of collector current.

MBB295

handbook, halfpage

handbook, halfpage

MBB296

C re (pF)

fT (GHz) 6 2

1 2

0 0 4 8 12 16 20 VCB (V)

0 0 40 80 120 I C (mA) 160

IE = 0; f = 1 MHz; Tj = 25 C.

VCE = 10 V; f = 1 GHz; Tamb = 25 C.

Fig.6

Feedback capacitance as a function of collector-base voltage.

Fig.7

Transition frequency as a function of collector current.

1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

MBB292

MBB293

handbook, halfpage

45

d im (dB)

handbook, halfpage

45

d im (dB)

50

50

55

55

60

60

65

65

70 20

40

60

80

100 120 I C (mA)

70 20

40

60

80

100 120 I C (mA)

VCE = 10 V; Vo = 900 mV; Tamb = 25 C; f(p+qr) = 443.25 MHz.

VCE = 10 V; Vo = 850 mV; Tamb = 25 C; f(p+qr) = 793.25 MHz.

Fig.8

Intermodulation distortion as a function of collector current.

Fig.9

Intermodulation distortion as a function of collector current.

MBB291

MBB290

handbook, halfpage

45

d2 (dB)

handbook, halfpage

45

d2 (dB)

50

50

55

55

60

60

65

65

70 20

40

60

80

100 120 I C (mA)

70 20

40

60

80

100 120 I C (mA)

VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C; f(p+q) = 450 MHz.

VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C f(p+q) = 810 MHz.

Fig.10 Second order intermodulation distortion as a function of collector current.

Fig.11 Second order intermodulation distortion as a function of collector current.

1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

handbook, halfpage Z

60 50

MEA951

L ()

handbook, halfpage

50

MEA952

ZL () 40 RL

40 30 20 10

RL 30

20

10 0 10 XL 0 0.25 0.50 0.75 1.0 POUT (W) 0 0 0.5 1 XL POUT (W) 1.5

VCE = 7.5 V; f = 900 MHz.

VCE = 10 V; f = 900 MHz.

Fig.12 Load impedance as a function of output power.

Fig.13 Load impedance as a function of output power.

handbook, halfpage

60

MEA953

MEA948

ZL ()

handbook, halfpage

10

50 RL

Zi () 8 ri xi 6

40

30 4 20 XL 2

10

0 0 0.5 1 P (W) 1.5 OUT

0 0 0.25 0.50 0.75 1.0 P (W) OUT

VCE = 12.5 V; f = 900 MHz.

VCE = 7.5 V; f = 900 MHz.

Fig.14 Load impedance as a function of output power.

Fig.15 Input impedance as a function of output power.

1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

MEA949

MEA950

handbook, halfpage

10

handbook, halfpage

10

Zi () 8 ri

Zi () 8 ri

xi

6 xi 4

0 0 0.5 1 POUT (W) 1.5

0 0 0.5 1 POUT (W) 1.5

VCE = 10 V; f = 900 MHz.

VCE = 12.5 V; f = 900 MHz.

Fig.16 Input impedance as a function of output power.

Fig.17 Input impedance as a function of output power.

MEA947

MEA945

handbook, halfpage

80

handbook, halfpage

1.5

(%) 70 V CE = 12.5 V 7.5 V 60 10 V

V CE = 12.5 V

P OUT (W)

10 V 1 7.5 V

0.5 50

40 0 0.5 1 POUT (W) 1.5

0 0 100 200 P IN (mW) 300

f = 900 MHz.

f = 900 MHz.

Fig.18 Efficiency as a function of output power.

Fig.19 Output power as a function of input power.

1995 Sep 13

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

MEA946

MBB289

handbook, halfpage

10

handbook, halfpage

40

Gp (dB) 8

G UM V CE 12.5 V = (dB) 30

6 10 V 20 7.5 V 4 10 2

0 0 0.5 1 POUT (W) 1.5

0 10

102

103

f (MHz)

104

IC = 100 mA; VCE = 10 V; Tamb = 25 C. f = 900 MHz.

Fig.20 Power gain as a function of output power.

Fig.21 Maximum unilateral power gain as a function of frequency.

1995 Sep 13

10

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

50
handbook, full pagewidth

25

100

10

250

+j 0 j 10 25 50 100 250

10

250

25 50 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 ..

100
MBB288

Fig.22 Common emitter input reflection coefficient (S11).

90 o
handbook, full pagewidth

120 o

60 o

150 o

30 o

180 o

50

40

30

20

10

0o

150 o

30 o

120 o 90 o IC = 100 mA; VCE = 10 V; Tamb = 25 C.

60 o
MBB286

Fig.23 Common emitter forward transmission coefficient (S21). 1995 Sep 13 11

Philips Semiconductors

Product specication

NPN 7GHz wideband transistor

BFG135

90 o
handbook, full pagewidth

120 o

60 o

150 o

30 o

180 o

0.1 0.2

0.3 0.4

0.5

0.6

0o

150 o

30 o

120 o 90 o IC = 100 mA; VCE = 10 V; Tamb = 25 C.

60 o
MBB285

Fig.24 Common emitter reverse transmission coefficient (S12).

50
handbook, full pagewidth

25

100

10

250

+j 0 j 10 25 50 100 250

10

250

25 50 IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 ..

100
MBB287

Fig.25 Common emitter output reflection coefficient (S22). 1995 Sep 13 12