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Product specification
BSH105
SYMBOL
d
GENERAL DESCRIPTION
N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiature surface mounting package.
PINNING
PIN 1 2 3 gate source drain DESCRIPTION
SOT23
3 Top view
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 k Ta = 25 C Ta = 100 C Ta = 25 C Ta = 25 C Ta = 100 C MIN. - 55 MAX. 20 20 8 1.05 0.67 4.2 0.417 0.17 150 UNIT V V V A A A W W C
THERMAL RESISTANCES
SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient CONDITIONS FR4 board, minimum footprint TYP. 300 MAX. UNIT K/W
August 1998
Rev 1.000
Philips Semiconductors
Product specification
BSH105
TYP. MAX. UNIT 0.57 140 180 240 270 1.6 10 50 1.3 3.9 0.4 1.4 2 4.5 45 20 152 71 33 200 250 300 375 100 100 10 V V V m m m m S nA nA A nC nC nC ns ns ns ns pF pF pF
gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ciss Coss Crss
August 1998
Rev 1.000
Philips Semiconductors
Product specification
BSH105
BSH105
0.1 1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00 1E+01
BSH105
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Ta); conditions: VGS 4.5 V
Drain-Source On Resistance, RDS(on) (Ohms) 100 Peak Pulsed Drain Current, IDM (A) BSH105 0.5 0.45 0.4 10 RDS(on) = VDS/ ID tp = 100 us 1 1 ms 10 ms 0.1 100 ms d.c. 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.01 0.1 1 10 Drain-Source Voltage, VDS (V) 100 0 0 0.5 1 1.5 2 2.5 3 Drain Current, ID (A) 3.5 4 Tj = 25 C 2.5 V 1.5 V 1.7 V 1.9 V 2.1 V
BSH105
VGS = 4.5 V
4.5
Fig.3. Safe operating area. Ta = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
August 1998
Rev 1.000
Philips Semiconductors
Product specification
BSH105
Drain Current, ID (A) 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 Gate-Source Voltage, VGS (V) 2.5 VDS > ID X RDS(on)
BSH105 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
typical
minimum
150 C
Tj = 25 C
0 3
25
50
75
100
125
150
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Drain Current, ID (A) Transconductance, gfs (S) 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 1E-07 0 0.2 0.4 0.6 0.8 Gate-Source Voltage, VGS (V) Drain Current, ID (A) 1E-04 1E-05 1E-06 1E-01 1E-02 1E-03 BSH105 1E+00 VDS = 5 V Tj = 25 C
BSH105
BSH105
25
50
75
100
125
150
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1998
Rev 1.000
Philips Semiconductors
Product specification
BSH105
BSH105
150 C Tj = 25 C
-0.2
-0.4
-0.6
-0.8
-1
-1.2
August 1998
Rev 1.000
Philips Semiconductors
Product specification
BSH105
HE
v M A
Q A A1
1
e1 e bp
2
w M B detail X Lp
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
EUROPEAN PROJECTION
August 1998
Rev 1.000
Philips Semiconductors
Product specification
BSH105
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
August 1998
Rev 1.000